• Journal of Information Display
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• v.2 no.4
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• Bulletin of the Korean Chemical Society
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• v.25 no.1
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• pp.73-78
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• 2004

A highly sensitive detecting method has been developed for determining part per billion of sulfur in $H_2S$/Ar plasma. The method is based on the excitation of Ar/$H_2S\;or\;Ar/H_2S/O_2$ mixture in hollow cathode glow discharge sustained by radiofrequency (RF) or 60 Hz AC power and the spectroscopic measurement of the intensity of emission lines from electronically excited $S_2^*\;or\;SO_2^*$ species, respectively. The RF or AC power needed for the excitation did not exceed 30 W at a gas pressure maintained at several mbar. The emission intensity from the $SO_2^*$ species showed excellent linear response to the sulfur concentration ranging from 5 ppbv, which correspond to S/N = 5, to 500 ppbv. But the intensity from the $S_2^*$ species showed a linear response to the $H_2S$ only at low flow rate under 20 sccm (mL/min) of the sample gas. Separate experiments using $SO_2$ gas as the source of sulfur demonstrated that the presence of $O_2$ in the argon plasma is essential for obtaining prominent $SO_2^*$ emission lines.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.62-66
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• 2004

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.220.2-220.2
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• 2014

플라즈마 질화 기술은 기존의 침탄 혹은 고주파 표면 경화 기술 대비 낮은 온도에서 열처리 공정이 진행됨에 따라 열 변형을 최소화 시킬 수 있으며, 후 가공을 간소화 시킬 수 있다는 장점으로 인해 자동차 부품 및 기타 응용 산업 분야에 있어 큰 관심을 받고 있다. 그러나 공정 진행에 장시간이 소요되고 복잡한 형상 및 홀 가공에 의한 기능부, 특히 내경부에 대한 균일 질화 처리가 어려워 실제 응용분야 확장에 큰 제약이 따르고 있다. 이를 해결하기 위해 본 연구에서는 일반 글로우 방전 대비 플라즈마 밀도가 10배 이상 높은 공공 음극 방전(Hollow Cathode Discharge, 이하 HCD) 현상을 이용하여 고속 고균일 질화공정을 개발하고자 하였으며, 상용화 적용을 위한 연구를 함께 진행하였다. 사용된 시료로는 실제 자동차 부품으로 사용되는 SCM415 소재의 ring gear와 slip yoke pipe를 사용하였으며, HCD 형성을 위해 특화된 플라즈마 질화장비를 활용, 공정 압력 및 인가 전력 등을 변수로 실험을 진행 하였다. 그 결과 질화 처리 속도에 있어 기존 글로우 방전 플라즈마 질화 대비 1/4 이하 수준으로 그 소요 시간을 단축시킬 수 있었으며, 다량 장입된 시료의 내경 기능부에 있어서도 높은 균일도를 갖는 질화표면이 형성됨을 확인할 수 있었다. 또한 기능부 표면에 형성된 HCD 현상을 열원으로 사용함으로써 외부가열 장치를 사용하지 않으면서도 기존의 hot wall 방식보다 높은 질화 균일도 구현이 가능하였으며, 소요 자원 및 전력 사용 측면에 있어서도 공정 시간 단축 및 외부 가열 공정 제거에 의한 높은 수준의 에너지 절약이 가능하였다.

• Analytical Science and Technology
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• v.8 no.3
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• pp.265-272
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• 1995

Schiff base ligand columns and glow discharge detector have been developed for the trace analysis of metal ions desolved in water. Various types of hydrazide Schiff base ligands have been used and, additionally, they were examined as a filling material of a HPLC column. The hydrazide Schiff base ligands used were N, N'-oxalybis(salicylaldehydrazone) (OBSH), N, N'-malonylbis(salicylaldehydrazone) (MBSH), and N, N'-succinylbis(salicylaldehydrazone) (SBSH). A mixture of Schiff base ligand and poly(styrene divinylbenzene) was examined and it showed a smooth flow of solution. The OBSH-polymer column demonstrated different effluent factors for different metal ions. Metal ions in eluates were detected by Hollow Cathode Glow Discharge-Atomic Emission Spectrometry(HCGD-AES). HCGD-AES showed good sensitivity and selectivity. This is only the preliminary results of new OBSH-polymer column and glow discharge detector.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.270-274
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• 1997

The numerical model that can describe the ignition of the pseudospark discharge using hybrid fluid-particle method has been developed. The evolution process of the discharge has been divided into four phases along the potential distribution. After the plasma enters in the hollow cathode, the confining effect which is one of hollow cathode properties occurs and the electron current on anode rises rapidly. As the plasma expands successively, the sheath contracts and as the electric field in the sheath increases, the field-enhanced thermionic emission(Schottky emission) occurs. From numerical results, the physical mechanism that causes the rapid current rise in the ignition of the pseudospark discharge could be identified.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.4
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• pp.641-647
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• 2008

In this paper, we have studied the basic discharge characteristics of ac-type cylindrical microcavity structure. The structure has a two electrodes, which are positioned in the bottom of the cavity and in the side wall of the cylinder, respectively. The discharge showed asymmetric phenomena depending on the position of a cathode electrode. When the bottom electrode was a cathode, the discharge was stronger even though the area of the cathode was smaller than that of the anode. Simulation results revealed that the focused electric field toward the bottom electrode increased ion density in the space which in turn strengthened the cathode sheath and ionization process.

• Journal of the Korean Chemical Society
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• v.48 no.4
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• pp.351-357
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• 2004

We have investigated the intensity of Cu 510.6 nm emission line in see-through hollow cathode glow discharge (st-HCGD) for the development of medical Cu vapor laser. In order to acquire the stable plasma in st-HCGD cell at high current, several factors such as current, the length and the inner diameter of cathode tube, the shape of the tube, and the range of the sputtering range were tested. An optimum condition in our st-HCGD cell was obtained at 600 V, 700 mA, 2.3 Torr of Ar gas (100 SCCM), and 40 mm of tube with 4-11-4 mm type cathode design. Also, it was indirectly observed that temperature in the cell could reach more than $1,000{\circ}C$ since Cu cathode was melt at the current more than 700 mA (melting point of Cu, $1084{\circ}C$).

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.26-29
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• 1999

Superconducting $YBa_{2}$$Cu_{3}$ $O_{7-x}$(YBCO) thin films were deposited on MgO(100) substrates using a hollow cathode discharge sputtering system. Influence of the sputtering conditions such as substrate temperature and discharge sputtering gas pressure on electrical and structural properties were investigated. It was found that YBCO thin films with zero resistance temperature higher than 85 K were obtained to the pressure 200 mToorr(Ar/O2=0.9), substrate temperature of $760^{\circ}C$, and target-substrate distance of 10 mm during film deposition. Homogeneous large area YBCO films with 2 inch diameter were also sucessfully fabricated by this method.

• Electrical & Electronic Materials
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• v.11 no.11
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• pp.152-156
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• 1998