• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.582-588
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• 1999

정보화 사회의 발전과 함께 멀티미디어에 대한 관심이 집중되고 있으며, 점유 공간이 작고 가벼우며 대면적이 가능한 정보 표시 디스플레이에 대한 기술은 고부가가치 산업으로 인식되어 지고 있다. 이러한 정보 표시 디스플레이들 중, 전기 발광 소자 (Electroluminescence Display : ELD), 액정 표시 디스플레이 (Liquid Crystal Display LCD), 플라즈마 디스플레이 (Plasma Display Panel) 등의 대한 연구가 세계적으로 매우 활발하게 진행되고 있다. 본 연구에서는 란탄 계열의 금속 착 화합물인 Tb(ACAC)$_3$(Phen)과 Tb(ACAC)$_3$(Phen-Cl)를 이용해 다비이스를 제작한후 광학적 및 전기적 특성을 조사하였다. 또한 luminous efficiency와 cyclic voltametric 방법을 이용해 에너지 밴드로 두 발광 물질인 Tb(ACAC)$_3$(Phen)과 Tb(ACAC)$_3$(Phen-Cl)을 비교.분석하였다. 본 연구의 디바이스 구조를 보면 anode/hole transporting layer (HTL)/emitting material layer (EML)/electron transporting layer (ETL)/cathode와 같고 ETL를 aluminum-tris- (8-hydroxyquinoline) (Alq$_3$)와 bis(10-hydroxybenzo(h)quinolinato)beryllium (Bebq$_2$)를 사용하였으며 HTL 로 N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD)를 사용하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.148-148
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• 2015

Over the past several years, Colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been developed for the future of optoelectronic applications. An inverted-type quantum-dot light-emitting-diode (QDLED), employing low work function organic material polyethylenimine ethoxylated(PEIE) (<10 nm)[1] modified ZnO nanoparticles (NPs) as electron injection and transport layer, was fabricated by all solution processing method, instead of electrode in the device. The PEIE surface modifier incorporated on the top of the ZnO NPs film, facilitates the enhancement of both electorn injection into the CdSe-ZnS QD emissive layer by lowering the workfunction of ZnO from 3.58eV to 2.87eV and charge balance on the QD emitter. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 7.5 V, the QDLED device emitted spectrally orange color lights with high luminance up to 11110 cd/m2, and showed current efficiency of 2.27 cd/A.[2]

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.362-363
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• 2012

A new cross-linkable polymer, cross-linked d-PBAB, which has the triphenylamine as the hole transporting moiety and ethynyl group as the thermal cross-linker is firstly synthesized by the combination of anionic polymerization and deprotection process. The thermal cross-linking reaction was performed at $240^{\circ}C$ for 50 min and cross-linked d-PBAB layer showed smooth surface and is not soluble at organic solvent under spin-coating of emitting layer (EML). The solution-processed PLED which was fabricated with cross-linked d-PBAB as HTL showed approximately two times higher Lmax and four times higher LEmax than those obtained from PLED with PEDOT:PSS as the HTL. These result is ascribed to better ability of cross-linked d-PBAB to block electrons and to prevent exciton-quenching than those of PEDOT : PSS at the EML interface. This results strongly suggested that cross-linked d-PBAB can be a promising material to replace conventional PEDOT : PSS. It can be suspected that PLEDwith cross-linked d-PBAB would show longer lifetime compared with that of PLED with PEDOT : PSS, and thus further studies are under investigation.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.363-368
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• 2010

N,N'-diphenyl-N,N'-bis(3-methylphenyl)1-1' biphenyl-4,4'-diamine (TPD) hole-transporting layers were deposited using a continuous slot-die coating method on ITO/PET flexible substrates. It is crucial that the substrates have a very smooth surface with a RMS roughness of less than 2 nm for the deposition of semiconductor nanocrystals or Quantum Dots. The parameters of the slot-die coating, including the solution concentration of the TPD, the gap between the slot-die and the substrates, and the coating speed were controlled in these experiments. To obtain full coverage of the TPD films on the ITO/PET substrates (40 mm wide and several meters long), the injection rates of the TPD solution were increased proportional to the coating speed of the flexible substrates. Additionally, the injection rates must be increased as the gap distance changes from 400 to 600 ${\mu}m$ at the same coating speed. A RMS surface roughness of less than 2 nm was obtained, in contrast to bare ITO/PET substrates, at 13 nm, as the coating speed and gap distance increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.50-55
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• 2014

It was firstly found in 1st group element. Recently, it has been reported on the improvement of efficiency of the OLEDs by introducing thin layer of some carbonate materials of alkali metal. In order to improve the efficiency of OLEDs which is one of the next generation displays, we have studied the electrical characteristics of the device depending on the thickness ratio of the hole-injection layer to the electron-injection layer. Teflon-AF was used as the hole-injection material, and alkali-metal carbonates of $Li_2CO_3$ were used as the electron-injection materials. To obtain a proper thickness ratio, we manufactured. Four types of devices with the thickness ratio of HIL to EIL were made to be 1 : 4, 2 : 3, 3 : 2, and 4 : 1. The results of electrical and optical properties showed that the device with the thickness ratio of 4 : 1 is the most excellent result. In addition, to prepare a four-layer device by inserting the ${\alpha}$-NPD is a hole transporting material was compared with three-layer element. As a result, the maximum luminance, the maximum luminous efficiency, maximum external quantum efficiency of about 124 [%], 164 [%], 106 [%] improve was confirmed.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.588-591
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• 2004

Polyazomethine type conjugated copolymers containing phenanthridine units, poly(PZ-PTI), were synthesized by Schiff-base reaction. This new conjugated copolymer exhibited improved solubility in common organic solvents due to the presence of alkyl side chains as well as phenanthridine groups. Double layer (ITO/poly(PZ-PTI)/$Alq_3$/Mg) light emitting diode (LED) exhibited enhanced EL emission and efficiency compared to that of single layer (ITO/poly(PZ-PTI)/Mg) LED. With increasing the thickness of $Alq_3$ layer in double layer (ITO/poly(PZ-PTI)/$Alq_3$/Mg) LED the emission peak gradually shifted to the single layer (ITO/$Alq_3$/Mg) LED, confirming good hole transporting behaviour of the synthesized conjugated copolymer.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1381-1382
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• 2005

We report improved efficiency in blue electrophosphorescent organic light emitting diodes by introducing an interfacial exciton blocking layer between light emitting layer (EML) and hole transport layer (HTL). Iridium(III) bis [(4,6-di-fluorophenyl)- pyridinato -N,C2']picolinate (FIrpic) was used as blue phosphorescent dopant and JHK6-3 with carbazole and electron transporting group as host and also as the interfacial layer, resulting in drastic increase in quantum efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1044-1045
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• 2005

Rapid progress has been achieved towards commercially viable full color polymer OLED devices. New full color polymer OLED displays which incorporate a novel hole injecting-transporting layer show high efficiency, low operating voltage and long lifetimes. The performance of a 14.1" WXGA a-Si based solution processed AMOLED full color display is described.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.694-697
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• 2007

We demonstrate the use of screen printing in the fabrication of highly efficient phosphorescent polymer organic-light-emitting devices (OLEDs) based on a green-emitting $Ir(ppy)_3$ and a host polymer PVK. We incorporate PBD in the polymer host as an electron-transporting dopant and ${\alpha}-NPD$ as a hole transporting dopant. The best screen printed single-layer device exhibits very high peak luminous efficiency of 63 cd/A at a relatively high operating voltage of 17.1 V at the luminance of $650\;cd/m^2$. We observed the highest luminance of $21,000\;Cd/m^2$ at 35V. Due to the high operating voltage, despite of the high peak luminous efficiency the peak power efficiency was found to be 12.2 lm/W at the luminance of $470\;cd/m^2$ (15.9 V).

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.17-24
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• 2022

Colloidal quantum dots (QDs) have gained attention for applications in quantum dot light emitting diodes (QLEDs) due to their high photoluminescence quantum yield, narrow emission spectra, and tunable bandgap. Nevertheless, non-radiative recombination induced by electron and hole imbalance deteriorates the device efficiency and stability. To overcome the problem, researchers have been trying to enhance hole transport properties of hole transporting layers (HTL) and/or slow down the electron injection in electron transport layer (ETL). Here, we summarize two approaches: i) development of interfacial materials between QD and ETL (or HTL); ii) engineering of HTL by blending or multi-layer approaches.