• 반도체디스플레이기술학회지
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• 제7권2호
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• pp.49-53
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• 2008

The yellow base polymer light emitting diodes(PLEDs) with double emission and hole blocking layers were prepared to improve the light efficiency. ITO(indium tin oxide) and PEDOT : PSS[poly(3,4-ethylenedioxythiophene) : poly(styrene sulfolnate)] were used as cathode and hole transport materials. The PFO[poly(9,9-dioctylfluorene)] and MEH-PPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. TPBI[Tpbi1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene] was used as hole blocking layer. To investigate the optimization of device structure, we prepared four kinds of PLED devices with different structures such as single emission layer(PFO : MEH-PPV), two double emission layer(PFO/PFO : MEH-PPV, PFO : MEH-PPV/PFO) and double emission layer with hole blocking layer(PFO/PFO : MEH-PPV/TPBI). The electrical and optical properties of prepared devices were compared. The prepared PLED showed yellow emission color with CIE color coordinates of x = 0.48, y = 0.48 at the applied voltage of 14V. The maximum luminance and current density were found to be about 3920 cd/$m^2$ and 130 mA/$cm^2$ at 14V, respectively for the PLED device with the structure of ITO/PEDOT : PSS/PFO/PFO : MEH-PPV/TPBI/LiF/Al.

• 한국수산과학회지
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• 제55권2호
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• pp.171-182
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• 2022

The habitat degradation caused by large-scale reclamation leads to devastating impacts, such as fine sediment and mud shrimp Upogebia major settlement on Manila clam Ruditapes philippinarum aquaculture in the eastern Cheonsu Bay tidal flats, Republic of Korea. Despite these impacts, there is a lack of studies on the influence of fine sediments on tidal flats that constitute key mud shrimp habitats. This study provides information on the seawater-sediment environment and the influence of dissolved inorganic nitrogen (DIN) fluctuations depending on mud shrimp burrow hole density. Additionally, it discusses countermeasures for Manila clam habitat management. The results show that mean DIN effluxes in areas with a high-density of burrow holes were up to 4 times (0.12 mmol m^-2 d^-1) higher than those in sites of low-density (0.03 mmol m^-2 d^-1) within the Saho and Songhak-ri tidal flats. To manage interference within the competition zone of Songhak-ri tidal flat, it is important to utilize the settlements of spawning season in all three dimensions. Consequently, additional studies in other tidal flats are essential and research in zones where mud shrimps and juvenile clams coexist will help to determine the priorities in the efficient management of clam aquaculture.

• 화약ㆍ발파
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• 제24권2호
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• pp.1-8
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• 2006

본 연구는 규석광의 터널 굴착시 굴진장 향상과 사압현상 및 소결현상을 예방하기 위해 모든 장약공의 장약밀도를 다르게 적용하였다. 이 때 심발공은 동일 장약공내에 2개의 뇌관을 이용한 정기폭과 역기폭의 복합기폭방식을 도입하였다. 자유면 형성이 어려운 공저부분은 높은 장약밀도로 장전하고, 주상부분은 공저보다 낮은 장약밀도로 장전함으로써 폭약의 위력이 효과적으로 암반에 대응할 수 있는 공법인 복합장약기폭시스템을 개발하였다. 그 결과 경암이나 장공발파에서 흔히 발생되는 사압현상 및 소결현상 등을 방지할 수 있었다. 또한 1회 천공장 대비 굴진장을 95% 이상 증대시킴으로써 약 15% 정도의 시공능율이 향상되고 비장약량이 20% 정도 감소되었다.

• 한국결정성장학회지
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• 제9권2호
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• pp.168-172
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• 1999

HVPE 법으로 sapphire 기판 위에 두께 9$\mu\textrm{m}$의 GaN film을 성장하였다. Sapphire위에 직접 성장된 GaN film은 crack free로 mirror surface를 나타내었고 dislocation density는 $2{\times}10^9/cm^2$이었다.$SiO_2$ mask pattern을 사용하여 성장된 ELO GaN film도 대부분이 mirror surface를 나타내었으나 표면 일부에서 coalescence가 덜 이루어져 stripe 방향으로 hole이 존재하였다. ELO GaN film의 mask 윗부분은 window 부분에 비해 낮은 dislocation density를 나타냈다. 특히 mask center와 window사이 영역에서는 거의 dislocation이 없었다. ELO GaN film의 dislocation density는 평균 $8{\times}10^7/cm^2$.이었다.

• Transactions on Electrical and Electronic Materials
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• 제16권2호
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• pp.90-94
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• 2015

In this study, the characterizations of oxide contact hole etching are investigated with C₄F₈/O₂/Ar and CH₂F₂/C₄F₈/O₂/ Ar plasma. As the percent composition of C₄F₈ in a C₄F₈/O₂/Ar mixture increases, the amount of polymer deposited on the etched surface also increases because the C_xF_y polymer layer retards the reaction of oxygen atoms with PR. Adding CH₂F₂ into the C₄F₈/O₂/Ar plasma increases the etch rate of the oxide and the selectivity of oxide to PR. The profile of contact holes was close to 90°, and no visible residue was seen in the SEM image at a C₄F₈/(C₄F₈+O₂) ratio of 58%. The changes of chemical composition in the chamber were analyzed using optical emission spectroscopy, and the chemical reaction on the etched surface was investigated using X-ray photoelectron spectroscopy.

• Journal of the Korean Wood Science and Technology
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• 제45권4호
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• pp.382-398
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• 2017

This study was conducted to identify the potential of Quercus mongolica (QUM), Pinus densiflora (PID) and Pinus rigida (PIR) as a raw material for pellet production. Larix kaempferi (LAK), which has mostly been used for pellet production in Korea, was also used as a control. All specimens contained very minimal amounts of sulfur and chlorine. Ash content of LAK was the lowest, followed by PID, PIR and QUM. For the size distribution, the mass fraction between 0.42 mm and 0.25 mm was the highest in PIR. Most fuel characteristics of the produced wood pellets improved with the use of 12% moisture content (MC) particles and the increase of the ratio of length to diameter of a hole in flat-die (L/D ratio). When the MC, bulk density and durability of QUM, PID, PIR and LAK pellets was compared with the standards of the KFRI and ISO, the use of wood particles of 12% MC and flat-die with an L/D ratio of 5.00 for PID particles are suitable for high-quality pellets in the aspects of all fuel characteristics. For PIR and QUM, further work is needed to seek the optimum conditions for the production of high-quality and durable pellets.

• 한국기계가공학회지
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• 제16권1호
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• pp.36-41
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• 2017

In this paper, $Si_3N_4/hBN$ ceramics with various hexagonal boron nitride (hBN) contents (0, 10, 20, or 30 wt%) were fabricated via spark plasma sintering (SPS) at $1500^{\circ}C$, 50MPa, and 10m holding time. The material properties such as the relative density, hardness, and fracture toughness were systematically evaluated according to the hBN content in the $Si_3N_4/hBN$ ceramics. The results show that relative density, hardness, and fracture toughness continuously decreased as the hBN content increased. In addition, peak-step drilling (with tool diameter $500{\mu}m$) was performed to observe the effects of hBN content in micro-hole shape and cutting force. A machined hole diameter of $510{\mu}m$ (entrance) and stable cutting force were obtained at 30 wt% hBN content. Consequently, $Si_3N_4/30wt%$ hBN ceramic is a feasible material upon which to apply semi-conductor components, and this study is very meaningful for determining correlations between material properties and machining performance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• 한국해양공학회지
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• 제26권2호
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• pp.20-25
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• 2012

During drilling, the precipitation velocity of cuttings within an annulus depends on the density and configuration of the cuttings, and on the density, viscosity, and rheological characteristics of the drilling fluid. In directional drilling in particular, it is difficult to adjust and control the cuttings. In contrast to vertical drilling, it is very important to evaluate the flow characteristics of a drilling flow field. However, research on the transfer features of cuttings is inadequate. In this study, in order to identify transfer features of cuttings, an experiment was performed under wide-ranging conditions by constructing a slim hole annulus ($44mm{\times}30mm$) device. In this experiment, the particle volume fraction were influenced by particle size, particle concentration within the flow, pipe rotation, flow volume, and inclination of the annulus. In addition, a mathematical formula for volumetric concentration was deduced and compared to the test results and behavior of cuttings under the other drilling condition was made to be predicted. Therefore, this study can provide meaningful data for vertical and horizontal drilling, and for directional drilling.

• Journal of Welding and Joining
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• 제24권2호
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• pp.64-70
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• 2006

The 3-dimensional (3D) chip stacking technology is a leading technology to realize a high density and high performance system in package (SiP). There are several kinds of methods for chip stacking, but the stacking and interconnection through Cu filled through-hole via is considered to be one of the most advanced stacking technologies. Therefore, we studied the optimum process of through-hole via formation and Cu filling process for Si wafer stacking. Through-hole via was formed with DRIE (Deep Reactive ion Etching) and Cu filling was realized with the electroplating method. The optimized conditions for the via formation were RE coil power of 200 W, etch/passivation cycle time of 6.5 : 6 s and SF6 : C4F8 gas flow rate of 260 : 100 sccm. The reverse pulsed current of 1.5 A/dm2 was the most favorable condition for the Cu electroplating in the via. The Cu filled Si wafer was chemically and mechanically polished (CMP) for the following flip chip bumping technology.