• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1407-1410
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• 2007

This work reports on three primary color fluorescent white organic light emitting diode (WOLED) with simple device structure where only a part of the hole transporting layer was doped with dye. The maximum luminance of the device reaches $35000\;cd/m^2$ at a drive voltage below 11V and external quantum efficiency of the device is above 1% in the wide range of luminance from 10 to $35000\;cd/m^2$ and reaches its highest 1.6% at $500\;cd/m^2$. The chromaticity coordinate shift of the device is negligible in this wide range of luminance. The blue shift of emission color with an increase of current density was attributed to the narrowing of recombination zone width with raise of current density.

• 산업기술연구
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• 제16권
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• pp.147-155
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• 1996

There is a considerable interest in tunable DFB-LD for their use in OFDM and coherent optical communications. In this paper, A modeling of ${\lambda}/4$-shifted tunable wavelength three electrode DFB-LD was performed considering the spatial hole burning within a laser diode cavity. The modeling will show design paramenters' requirement for high-speed and broad bandwidth lasers. The simulations of modeling prove that the continuous tuning range is about 3nm and the SMSR is about several dB. We showed that the optical power and carrier density distribution along z for several dc current with SHB. It was shown that prove that optical power and carrier density along cavity are changed and thismeans that modeling is correct.

• 마이크로전자및패키징학회지
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• 제21권2호
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• pp.53-57
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• 2014

Thin glass (< 100 microns) is a promising material from which advanced interposers for high density electrical interconnects for 2.5D chip packaging can be produced. But thin glass is extremely brittle, so mechanical micromachining to create through glass vias (TGVs) is particularly challenging. In this article we show how laser processing using deep UV excimer lasers at a wavelength of 193 nm provides a viable solution capable of drilling dense patterns of TGVs with high hole counts. Based on mask illumination, this method supports parallel drilling of up over 1,000 through vias in 30 to $100{\mu}m$ thin glass sheets. (We also briefly discuss that ultrafast lasers are an excellent alternative for laser drilling of TGVs at lower pattern densities.) We present data showing that this process can deliver the requisite hole quality and can readily achieve future-proof TGV diameters as small $10{\mu}m$ together with a corresponding reduction in pitch size.

• 한국광학회:학술대회논문집
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• 한국광학회 1995년도 광학 및 양자전자학 워크샵 논문집
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• pp.138-148
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• 1995

A reduced description of the dynamics of carriers in excited semiconductors is presented. Fristly, a time-convolutionless equation of motion for the reduced density operator is derved from the microscopic Liouville wquation operator method. Secondly, the quantum kinetic equations for intercting electron-hole parirs near band-edge in semiconductors under an extermal optical field are obtained from the equation of motion for the reduced density operator. The non-Markovian optical gain of a driven semiconductor is derived including the many-body effects. plasma screening and excitinic effects are taken into account using as effective Hamiltonian in the time-dependent Hartree-Fock approximation. it is shown that the line shape of optical-gain spectra gain is enhanced by the exicitonic effects caused by the attrative electron-hole Coulomb interaction and the interference effects (renormalized memory effects) between the extermal driving filed and the intermal driving Filed and the stochastic reservoir of the system.

• 한국광학회지
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• 제10권4호
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• pp.294-300
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• 1999

본 논문에서는 반도체 광증폭기내에서 four-wave mixing을 발생시키는 spectral hole burning을 더욱 정확하게 해석하기 위하여 밀도행렬을 기존의 방법에 비하여 정확하게 푸는 방법에 대하여 설명하고 이러한 밀도행렬에 대한 수치해석을 실시하여 그 해를 구한다. 이렇게 구한 결과를 통해 반도체 광증폭기내에서의 four-wave mixing에 의한 파장변환을 설명하는 결합 파동 방정식을 유도하고 이것의 해를 구하여 반도체 광증촉기에서의 파장변환이 어떻게 발생하는 지를 설명하고 3차 섭동을 이용하여 계산된 기존의 결과와 비교한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.508-509
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• 2005

In case of ITO/MEH-PPV/Al structure, the quantity of charge carriers flowing through the organic material was few and the density of them is fixed. The electric field inside of the device almost didn't change with the position. On the other hands, in case of Au/MEH-PPV/Au structure, the hole density increased rapidly nearby the anode but decreased nearby the cathode. The space charge phenomenon followed sufficient hole injection resulted in the change of the electric field with the position inside of the device. We verified that the result of the current-voltage simulation corresponded with experimental result.

• Bulletin of the Korean Chemical Society
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• 제18권8호
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• pp.841-850
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• 1997

A simple molecular theory of mixtures is formulated based on the nonrandom two-fluid lattice-hole theory of fluids. The model is applicable to mixtures over a density range from zero to liquid density. Pure fluids can be completely characterized with only two molecular parameters and an additional binary interaction energy is required for a binary mixture. The thermodynamic properties of ternary and higher order mixtures are completely defined in terms of the pure fluid parameters and the binary interaction energies. The Quantitative prediction of vapor-liquid, and solid-vapor equilibria of various mixtures are demonstrated. The model is useful, in particular, for mixtures whose molecules differ greatly in size. For real mixtures, satisfactory agreements are resulted from experiment. Also, the equation of state (EOS) is characterized well, even the liquid-liquid equilibria behaviors of organic mixtures and polymer solutions with a temperature-dependent binary interaction energy parameter.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.983-987
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• 2010

In order to investigate the emission characteristics of the phosphorescent white organic light-emitting diodes (PHWOLEDs) according to various hole transport layers (HTLs), PHWOLEDs composed of HTLs whose structure are NPB/TCTA, NPB/mCP and NPB/TCTA/mCP, two emissive layers (EMLs) which emit two-wavelengths of light (blue and red), and electron transport layer were fabricated. The applied voltage, power efficiency, and external quantum efficiency at a current density of $1 mA/cm^2$ for the fabricated PHWOLEDs were 7.5 V, 11.5 lm/W, and 15%, in case of NPB/mCP, 5 V, 14.8 lm/W, and 13.7%, in case of NPB/TCTA, and 5.5 V, 14.6 lm/W, and 15%, in case of NPB/TCTA/mCP in the hole transport layer, respectively. High emission efficiency can be obtained when the amount of hole injection from anode is balanced out by the amount of electron injection from the cathode to EML by using NPB/TCTA/mCP structured HTL.

• 한국정보과학회논문지:컴퓨팅의 실제 및 레터
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• 제16권7호
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• pp.804-808
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• 2010

본 논문에서는 네트워크에 분포된 센서 노드의 밀도와 노드의 제한된 에너지를 고려하여 데이터를 전송하는 Restricted Angle-control Flooding기법을 제안한다. 제안하는 기법은 특히 목적지에 가까워질수록 데이터 전송에 참여하는 노드의 수를 효율적으로 줄임으로써 불필요한 Broadcast 메시지를 제한하여 에너지 효율성을 높일 수 있으며, 노드의 Failure나 네트워크의 장애로 인한 Hole 발생시 Hole의 판단 기준에 따라 기존의 Flooding 방식 혹은 Forwarding area를 넓히는 Hole-Detection을 통하여 메시지 전송의 효율성을 높인다. 성능 평가를 통하여 노드 수가 증가할수록 기존의 Flooding에 비하여 메시지 전송시 소비되는 노드의 에너지와 전송률, 네트워크의 Lifetime면에서 우수하다는 것을 보여준다.

• Bulletin of the Korean Chemical Society
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• 제31권6호
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• pp.1649-1656
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• 2010

Internal reorganization energy due to the structural relaxation in hole or electron hopping mechanism is one of the measurements of key indices in designing an organic thin film transistor (OTFT) for flexible display devices. In this study, the reorganization energies of dicyanoanthracenes for the hole and electron transfer were estimated by adiabatic potential energy surface and normal mode analysis method in order to examine the effect on the energies for the positional variation of the cyano substituents in the anthracene as a protocol of acenes to design an organic field effect transistor. The reorganization energy for the hole transfer was reduced considerably upon cyanation of anthracene, especially at the 9,10-positions of anthracene, and the origin of the reduction was interpreted in terms of understanding the coupling of vibrational modes to the hole transfer.