• Composites Research
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• 제29권4호
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• pp.179-185
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• 2016

A self-charging supercapacitor is constructed through simple integration of the energy storage and photo exited materials at the photo electrode. The large band gap of $NiO/Fe_3O_4$ heterostructure generates photo electron at the photo electrode and store the charges through redox mechanism at the counter electrode. Sulfanilic acid azocromotrop/reduced graphene oxide layer at the photo electrode trapped the photo generated hole and store the charge by forming double layer. The solar supercapacitor device is charged within 400 s up to 0.5 V and exhibited a high specific capacitance of ~908 F/g against 1.5 A/g load. The solar illuminated supercapacitor shows a high energy and power density of 33.4 Wh/kg and 385 W/kg along with a very low relaxation time of ~15 ms ensuring the utility of the self charging device in the various field of energy storage and optoelectronic application.

• 대한전자공학회논문지SD
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• 제39권1호
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• pp.31-38
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• 2002

0.35㎛-비아(via) 식각공정을 개선하기 위하여 C₂F/sub 6/가스의 식각특성을 분석하였다. 실험한 재료는 TEOS/SOG/TEOS 막을 올린 8인치 웨이퍼이며, 실험의 기법은 직교행열(Orthogonal array matrix) 실험 방식을 활용하였다. 산화막 식각에 이용된 장비는 transformer coupled plasma(TCP) source 방식이며 고밀도 플라즈마(HDP)장비이다. 실험의 결과는, 실험변수의 범위 내에서 C₂F/sub 6/는 0.8㎛/min-1.l㎛/min 범위의 식각속도를 보이며 균일도(Uniformity)는 ±6.9%미만으로 측정되었다. CD 변화(skew)는 식각 전과 후를 비교하여 10% 미만이었고 그 결과 비등방성(anisotropic) 식각의 특성이 우수하였다. C₂F/sub 6/를.20sccm 공급할 때 문제점이 발견되지 않았지만 14sccm을 공급하면 SOG 막의 내벽이 침식당하는 문제점이 있었다. 결과적으로 C₂F/sub 6/는 HDP TCP에서 빠른 식각비와 넓은 공정창(process window)을 가진 식각특성을 나타내었다.

• 대한전자공학회논문지SD
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• 제48권7호
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• pp.76-81
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• 2011

본 논문에서는 비아 절단 구조를 제안하고 2층 구조의 DRAM 패키지 기판 설계에 적용하여 낮은 임피던스를 가지는 파워 분배망(Power Distribution Network)을 구현하였다. 제안한 신규 비아 구조는 비아의 일부가 절단된 형태이고 본딩 패드와 결합하여 넓은 배선 면적을 필요로 하지 않는 장점을 가진다. 또한 비아 절단 구조를 적용한 설계에서는 본딩 패드에서 VSSQ까지의 배선 경로를 효과적으로 단축시킴으로써 PDN 임피던스를 개선시킬 수 있다. DRAM 패키지 기판 상의 윈도우 영역 형성과 동시에 비아의 일부 영역이 제거되므로 비아 절단 구조 제작을 위한 추가적인 공정은 없다. 또한 비아 홀 내부를 솔더 레지스트로 채움으로써 버(Burr) 발생을 최소화하였으며, 이를 패키지 기판 단면 촬영을 통해 검증하였다. 비아 절단 구조의 적용 및 VDDQ/VSSQ 배치에 의한 PDN 임피던스 변화를 검증하기 위해서 3차원 전자장 시뮬레이션 및 네트워크 분석기 측정을 통해 기존 방식을 적용한 패키지 기판과 비교 검증을 진행하였다. 신규 DRAM 패키지 기판은 대부분의 주파수 범위에서 보다 우수한 PDN 임피던스를 가졌으며, 이는 제안한 비아 절단 구조와 파워/그라운드 설계 배치가 PDN 임피던스 감소에 효과적임을 증명한다.

• Journal of Welding and Joining
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• 제20권4호
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• pp.525-534
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• 2002

During laser spot welding of the braun tube electron gun, phenomena such as serious spattering and oxidative reaction, etc. were occurred. The spatter occurred from weld pool affects the braun tube, namely it blocks up a very small hole on the shadow mask and causes short circuit between two roles of the electron gun. We guessed that high power density and oxidative reaction are main sources of these problems. So, we studied to prevent and to reduce spatter occurring in spot welding of the braun tube electron gun using pulsed Nd:YAG laser. The characteristics of laser output power was estimated, and the loss of laser energy by optical parameter and spatter was measured by powermeter. The effects of welding parameters, laser defocused distance and incident angle, were investigated on the shape and penetration depth of the laser welded bead in flare and flange joints. From these results, the laser peak power was a major factor to control penetration depth and to occur spatter. It was found that the losses of laser energy by optic parameter and sticked spatter affect seriously laser weldability of thin sheets. The deepest penetration depth is gotten on focal position, and a "bead transition" occurred with a slight displacement of focal position relative to the workpiece surface and the absorption rate of the laser energy is affected by the shape factor of the workpiece. When we changed the incident angle of laser beam, the penetration depth was decreased a little with increasing of the incident angle, and the bead width was increased. The spattering was prevented by considering laser beam energy and incident angle.ent angle.

• 한국물환경학회지
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• 제33권4호
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• pp.474-480
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• 2017

This study was to estimate the reduction effect of nonpoint source pollutants according to the rainfall intensity and drainage of infiltration grate inlet. Soil infiltration flow was measured on-site and SS load by the filter part was calculated by the experimental data in laboratory reactor test. Soil infiltration flow was measured to be about $1m^3/hr$ in soil condition saturated with water. The filter part of the infiltration grate inlet was a hydraulic equipment unhindered by soil infiltration on the bottom of the storage tank, because the infiltration flow was measured to be about $3m^3/hr$ continuously in the closing infiltration hole condition. Infiltration flow and SS load were over about $1m^3/hr$ and 1.71 kg according to laboratory results by the filter part using the artifical sample. Therefore, the above values could be presented as the limitted value to start the reduction of filtration effect. Reduction efficiencies of SS load by the filter part for the rainfall intensity were about 87 % at 5 mm/hr and about 61 % at 10 mm/hr in consideration of one infiltration grate inlet got the drainage area about $200m^2$. The reduction efficiency of nonpoint source pollutants was very effective in the first flush rainfall. However, the reduction efficiency by rainfall density was higher than by flow.

• 천문학회보
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• 제35권1호
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• pp.27.2-27.2
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• 2010

We have studied the formation of coronal holes (CHs) associated with halo CMEs. For this study, we used multi-wavelength data from Yohkoh Soft X-ray Telescope (SXT), GOES Soft X-ray Imager (SXI), SOHO EIT 195 ${\AA}$, SOHO MDI magnetogram, MLSO He I 10830 ${\AA}$, and BBSO H-alpha. The CHs are characterized by open magentic field regions with low emission, density, and temperature and their open fields drive high speed solar winds which cause geomagnetic storms. So far, the formation and the evolution of CHs are not well understood. The formation of the dark region associated with the eruption of a CME is well known as "coronal dimming" which may be caused by the mass depletion near the CME footpoint. It is different from a typical CH since it persists for only one or two days. In this study, we present three cases that show the formation of coronal holes which are associated with three halo CMEs: 1) 2000 Jul 14, 2) 2003 Oct 28, 3) 2005 May 13. In the first case, hot plasma was ejected during a weak eruption and then filled out the pre-existing CH. After the halo CME occurred, the hot plasma region becomes a CH again. In the second and the third cases, we found newly formed CHs just after their associated CMEs. All three coronal holes are associated with strong flares and persist over 3 days until they disappeared by the solar rotation. Examining the MDI magnetograms, we found that the magnetic polarity of each CH region has one polarity. Based on these results, we suggest that the coronal holes can be formed by the CMEs and they should be distinguished from the coronal dimming.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.24-28
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• 2012

In this study, we fabricated an amorphous InGaZnO pseudo-MOS transistor (a-IGZO ${\Psi}$-MOSFET) with a stacked $Si_3N_4/SiO_2$ (NO) gate dielectric and evaluated reliability of the devices with various thicknesses of a $SiO_2$ buffer layer. The roles of a $SiO_2$ buffer layer are improving the interface states and preventing degradation caused by the injection of photo-created holes because of a small valance band offset of amorphous IGZO and $Si_3N_4$. Meanwhile, excellent electrical properties were obtained for a device with 10-nm-thick $SiO_2$ buffer layer of a NO stacked dielectric. The threshold voltage shift of a device, however, was drastically increased because of its thin $SiO_2$ buffer layer which highlighted bias and light-induced hole trapping into the $Si_3N_4$ layer. As a results, the pseudo-MOS transistor with a 20-nm-thick $SiO_2$ buffer layer exhibited improved electrical characteristics and device reliability; field effective mobility(${\mu}_{FE}$) of 12.3 $cm^2/V{\cdot}s$, subthreshold slope (SS) of 148 mV/dec, trap density ($N_t$) of $4.52{\times}1011\;cm^{-2}$, negative bias illumination stress (NBIS) ${\Delta}V_{th}$ of 1.23 V, and negative bias temperature illumination stress (NBTIS) ${\Delta}V_{th}$ of 2.06 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.63-63
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• 2010

Using both experimental and theoretical approaches, we have investigated the adsorption properties of an organic molecule (HATCN), which is used in OLEDs as an efficient hole injection layer, on metal and inert surfaces. We have also studied the structural and electronic properties of such interfaces and the dependences on deposition thickness. We have observed different trends in work function changes with different surfaces. Our photoelectron spectroscopic measurements have revealed an abnormal phenomenon in HATCN on a metal (Cu) surface: the work function decreases at lower coverage (~monolayer) of HATCN on a metal (Cu) surface, but it increases back and becomes higher than that of a bare Cu surface at higher coverage. It has, on the contrary, been observed that the work function of graphene surface just increases as the HATCN coverage increases. Our first-principles density functional calculations has not only verified our experimental observations, but also disclosed the underlying mechanism of such abnormal and different work function behaviors. We have found that the change in work function results from mutual polarization induced by the geometrical deformation and the bond dipole formed at the interface due to the charge redistribution. At low coverage of HAT-CN on Cu substrate, the former reduces the work function significantly by pulling down the vacuum level, while the latter tends to push up the vacuum level resulting in the work function increase.

• 한국분말재료학회지
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• 제24권6호
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• pp.489-493
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• 2017

In this study, the surface passivation process for InP-based quantum dots (QDs) is investigated. Surface coating is performed with poly(methylmethacrylate) (PMMA) and thioglycolic acid. The quantum yield (QY) of a PMMA-coated sample slightly increases by approximately 1.3% relative to that of the as-synthesized InP/ZnS QDs. The QYs of the uncoated and PMMA-coated samples drastically decrease after 16 days because of the high defect state density of the InP-based QDs. PMMA does not have a significant effect on the defect passivation. Thioglycolic acid is investigated in this study for the effective surface passivation of InP-based QDs. Surface passivation with thioglycolic acid is more effective than that with the PMMA coating, and the QY increases from 1.7% to 11.3%. ZnS formed on the surface of the InP QDs and S in thioglycolic acid show strong bonding property. Additionally, the QY is further increased up to 21.0% by the photochemical reaction. Electron-hole pairs are formed by light irradiation and lead to strong bonding between the inorganic and thioglycolic acid sulfur. The surface of the InP core QDs, which does not emit light, is passivated by the irradiated light and emits green light after the photochemical reaction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.283-283
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• 2011

The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.