• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.552-557
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• 2006

Electrical, optical, surface, and structural properties of amorphous indium-zinc-oxide (a-IZO) grown by box cathode sputtering (BCS) were compared with crystalline indium-tin-oxide (c-ITO) anode films grown by conventional DC sputtering (DCS). Although x-ray diffraction plot of BCS-grown IZO film shows amorphous structure, the optical and electrical properties of a-IZO is comparable to those of c-ITO film. In particular, BCS-grown IZO films shows very smooth surface without defects such as pin hole and cracks because most of the energy of the sputtered atoms was confined in high density plasma region in box cathode gun. Furthermore polymer organic light emitting diodes (POLED) with the a-IZO anode film shows better electrical properties than that of POLED with the c-ITO anode film due to high work function and smooth surface of a-IZO. This suggested that BCS-grown a-IZO film is promising anode materials substituting conventional c-ITO anode in OLED and flexible displays.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.4
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• pp.562-567
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• 1996

A new lateral MOS controlled thyristor, named Shorted Anode LMCT(SA-LMCT), is proposed and analyzed by a two-dimensional device simulation. The device structure employs the implanted n+ layer which shorts the p+ anode together by a common metal electrode and provides a electron conduction path during turn-off period. The turn-off is achieved by not only diverting the hole current through the p+ cathode short but also providing the electron conduction path from the n-base into the n+ anode electrode. In addition, the modified shorted anode LMCT, which has an n+ short junction located inside the p+ anode junction, is also presented. It is shown that the modified SA-LMCT enjoys the advantage of no snap-back behavior in the forward characteristics with little sacrificing of the forward voltage drop. The simulation result shows that the turn-off times of SA-LMCT can be reduced by one-forth and the maximum controllable current density may be increased by 45 times at the expense of 0.34 V forward voltage drop as compared with conventional LMCT. (author). 11 refs., 6 figs., 1 tab.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1293-1294
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• 2006

OLEDs based on organic thin films are similar to semiconductor base light-emitting diodes in that they were also considered to be one of the next generation flat-panel displays. They are attractive because of low-operating voltage, low power consumption, ease of fabrication, and low cost. In this study, we used poly (3,4-ethylenedioxythiophene)/poly (4-styrenesulfonate) (PE DOT : PSS) as a hole injection layer. In this experiment spin coating method was used with various speed rate. The fundamental structure of the OLEDs was ITO/PEDOT:PSS/NPB/$Alq_3$/Al. As a result, we obtained the enhancement performance of OLEDs when the spin coating speed was 4000 rpm. We obtained a maximum luminance of 24334 $cd/m^2$ at a current density of 967 $mA/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.422-423
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• 2007

In this work, Organic Light Emitting Diodes using LiF as a electron-injecting interfacial have been fabricated for efficiency enhancements. This interfacial layer is interposed between Al/$Alq_3$ layer. The brightness and specific character as current density are higher than those of the device without it. To find best thickness of LiF layer, we used some samples with various thickness. The LiF interposition at the Al/$Alq_3$ interface encouraged the electrons injection and balances the injection numbers of hole and electron in the emission layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.123-124
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• 2005

We investigated the effect of a Ta/TaN Cu diffusion barrier existence on the reliability and the electrical performance of Cu dual-damascene interconnects. A high EM performance in Cu dual-damascene structure was observed the BCV(barrier contact via) interconnect structure to remain Ta/TaN barrier layer. Via resistance was decreased DCV interconnect structure by bottomless process. This structure considers that DCV interconnect structure has lower activation energy and higher current density than BCV interconnect structure. The EM failures by BCV via structure were formed at via hole, but DCV via structure was formed EM fail at the D2 line. In order to improve the EM characteristic of DCV interconnect structure by bottomless process, after Ta/TaN diffusion barrier layer in via bottom is removed by Ar+ resputtering process, it is desirable that Ta thickness is thickly made by Ta flash process.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.268-268
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• 2010

The performance dependence of the P3HT:PCBM based bulk hetero-junction (BHJ) organic solar cells (OSCs) on the electrical and the optical properties of amorphous InZnSnO (a-IZTO) electrodes as a difference in film thicknesses are examined. With an increasing of the a-IZTO thickness, the series resistance ($R_{series}$) of the OSCs is reduced because of the reduction of sheet resistance ($R_{sheet}$) of a-IZTO electrodes. Additionally, It was found that the photocurrent density ($J_{sc}$) and the fill factor (FF) in OSCs are mainly affected by the electrical conductivity of the a-IZTO anode films rather than the optical transparency at thinner a-IZTO films. On the other hand, despite the much lower $R_{series}$ comes from thicker anode films, the dominant factor affecting the $J_{sc}$ became average optical transmittance of a-IZTO electrodes as well as power conversion efficiency (PCE) in same device configuration due to the thick anode films had as sufficiently low $R_{sheet}$ to extract the hole carrier from the active material.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.2
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• pp.52-57
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• 2019

To develop a stirring device that can automatically measure the viscosity of a fluid, the impeller type of the device must be recognized without making contact. In this study, we propose a method to discriminate the type of impellers using the changes in the magnetic field. Permanent magnets are inserted into a hollow hole of the impellers, and the change of the magnetic field is measured by a hall sensor. All experimental results are compared with the FEM analysis results. The results show that with the increase in diameter and length of the magnet inserted into the impeller, the magnitude of the magnetic flux density increases. The magnetic field is more sensitive to the change in the magnet diameter than to the change in magnet length. In order to reduce the machining costs, however, it is advantageous to change the magnet length instead of the magnet diameter.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4652-4659
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• 2022

Among the detector materials available at room temperature, thallium bromide (TlBr), which has a relatively high atomic number and density, is widely used for gamma camera imaging. This study aimed to verify the usefulness of TlBr through quantitative evaluation by modeling detectors of various compound types using Monte Carlo simulations. The Geant4 application for tomographic emission was used for simulation, and detectors based on cadmium zinc telluride and cadmium telluride materials were selected as a comparison group. A pixel-matched parallel-hole collimator with proven excellent performance was modeled, and phantoms used for quality control in nuclear medicine were used. The signal-to-noise ratio (SNR), contrast to noise ratio (CNR), sensitivity, and full width at half maximum (FWHM) were used for quantitative analysis to evaluate the image quality. The SNR, CNR, sensitivity, and FWHM for the TlBr detector material were approximately 1.05, 1.04, 1.41, and 1.02 times, respectively, higher than those of the other detector materials. The SNR, CNR and sensitivity increased with increasing detector thickness, but the spatial resolution in terms of FWHM decreased. Thus, we demonstrated the feasibility and possibility of using the TlBr detector material in comparison with commercial detector materials.

• Journal of the Korean institute of surface engineering
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• v.56 no.3
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• pp.169-179
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• 2023

This work studies dielectric breakdown behavior of AAO (anodic aluminum oxide) films formed on pure aluminum at a constant current density in 5 ~ 20 vol.% sulfuric acid (SA) and 2 ~ 8 wt.% oxalic acid (OA) solutions. It was observed that dielectric breakdown voltage of AAO film with the same thickness increased with increasing concentration of both SA and OA solutions up to 15 vol.% and 6 wt.%, respectively, above which it decreased slightly. The dielectric breakdown resistance of the OA films appeared to be superior to that of SA films. After dielectric breakdown test, cracks and a hole were observed. The crack length increased with increasing SA film thickness but it did not increase with increasing OA film thickness. To explain the reason why shorter cracks formed on the OA films than the SA films after dielectric breakdown test, the generation of tensile stresses at the oxide/metal interface was discussed in relation to porosity of AAO films obtained from cross-sectional morphologies.

• Geophysics and Geophysical Exploration
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• v.10 no.4
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• pp.383-392
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• 2007

Karstic features and mining-related cavities not only lead to severe restrictions in land utilizations, but also constitute serious concern about geohazard and groundwater contamination. A microgravity survey was applied for detecting, mapping and monitoring karstic cavities in the test site at Muan prepared by KIGAM. The gravity data were collected using an AutoGrav CG-3 gravimeter at about 800 stations by 5 m interval along paddy paths. The density distribution beneath the profiles was drawn by two dimensional inversion based on the minimum support stabilizing functional, which generated better focused images of density discontinuities. We also imaged three dimensional density distribution by growing body inversion with solution from Euler deconvolution as a priori information. The density image showed that the cavities were dissolved, enlarged and connected into a cavity network system, which was supported by drill hole logs. A time-lapse microgravity was executed on the road in the test site for monitoring the change of the subsurface density distribution before and after grouting. The data were adjusted for reducing the effects due to the different condition of each survey, and inverted to density distributions. They show the change of density structure during the lapsed time, which implies the effects of grouting. This case history at the Muan test site showed that the microgravity with accuracy and precision of ${\mu}Gal$ is an effective and practical tool for detecting, mapping and monitoring the subsurface cavities.