• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1956-1958
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• 1999

The analysis of hole injection efficiency at the p+/n-drift layer junction in non-punchthrough IGBT structure is presented. This analysis takes into account carrier concentration variations by conductivity modulation. Good agreement between this analysis and simulation is found over a wide range of carrier lifetime and current density. The proposed analytical model of the hole injection efficiency as a function of collector width, collector concentration has been verified by device simulator, ATLAS.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.731-734
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• 1997

In this study, a shape optimization is performed for circular and elliptical holes to reduce weight of a plate. It is accomplished in reference to the results of topology optimization of the square plate with circular hole. From the results. it is concluded that the stress values of shape optimization of them are satisfied with 100MPa of constraint condition.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.4
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• pp.484-495
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• 2003

This study investigates the flow characteristics of fuel droplets between twin spray for the 4-hole injector used a 4-valve gasoline engine. The injectors for this study were the three types of 4-hole gasoline injector in which orifice diameter was 0.24mm. The spray behavior of twin spray was investigated by means of visualization employed stroboscope. A PDPA system was employed to simultaneously measure the size and velocity of fuel droplets. The 3 dimensional mean velocities. droplet size distributions, SMD and joint probability density function of velocity and droplet size are analyzed at the center of the spray and the center region of twin spray. As a result, the configurations of injector exit such as orifice interval and length of outlet, are very important factors that affect the flow characteristics of fuel droplets at the center region of twin spray.

• Bulletin of the Korean Chemical Society
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• v.33 no.3
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• pp.763-769
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• 2012

We investigated the width (N) dependence on the magnetization of N-ZSiC NR with electron and hole doping on the basis of systematic DFT calculations. The critical values of the upper and down critical concentration to give the maximum and zero magnetic moment at edge Si/C atoms by electron/hole doping ($x_{up,e}$, $x_{down,e}$, $x_{up,h}$, and $x_{down,h}$) depend on the width of N-ZSiC NR. Moreover, due to $x_{up,e}\;{\neq}\;x_{up,h}$ and $x_{down,e}\;{\neq}\;x_{down,h}$, the electron and hole doping effect are asymmetry, i.e, the critical electron doping value ($x_{down,e}$) is smaller than the critical hole doping value ($x_{down,h}$) and is almost independent of the width of NZSiC NR though the other critical values of the electron and hole doping that influence the magnetization of N-ZSiC NR depend on the width. It was also found that at $x_{down,e}$ or $x_{down,h}$ doping, the N-ZSiC NR turns into unusual non-magnetic metallic state. The magnetic behavior was discussed based on the band structures and projected density of states (PDOS) under the effect of electron/hole doping.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.867_868
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• 2009

Interior permanent magnet synchronous motor [IPMSM] which has high power density is applied to motor for Hybrid electric vehicle[HEV], Electric vehicle[EV], Fuel cell electric vehicle[FCEV] and electric home appliances. In order to improve efficiency performance of IPMSM, this paper presented a study by making a hole around air barrier. Because concentrated rib stress is distributed by suitable hole, the hole can reduce rib thickness of IPM rotor. And it can help decrease PM[Permanent Magnet] leakage flux. Saliency ratio($L_q/L_d$) is also increased by magnetic circuit change. For this study, structure analysis of rotor is performed by Ansys program.

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.190-192
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• 2006

The 3-dimensional(3D) chip stacking technology is one of the leading technologies to realize a high density and high performance system in package(SIP). It could be found that it is the advanced process of through-hole via formation with the minimum damaged on the Si-wafer. Laser ablation is very effective method to penetrate through hole on the Si-wafer because it has the advantage that formed under $100{\mu}m$ diameter through-hole via without using a mask. In this paper, we studied the optimum method for a formation of through-hole via using femto-second laser heat sources. Furthermore, the processing parameters of the specimens were several conditions such as power of output, pulse repetition rate as well as irradiation method and time. And also the through-hole via form could be investigated and analyzed by microscope and analyzer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.397-402
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• 2023

We have developed inverted green phosphorescent organic light emitting diodes (OLEDs) using 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) and bis(carbazole-9-yl)biphenyl (CBP) hole transport layers. The driving voltage, current efficiency, power efficiency, and emission characteristics of devices were investigated. While the driving voltage for the same current density was about 1~2 V lower in the devices with the TAPC layer, the maximum luminance was higher in the device with the CBP layer. The maximum current efficiency and power efficiency were 3.2 and 2.7 times higher in the device with the CBP layer, respectively. The higher efficiency in the CBP device resulted from the enhanced hole-electron balance although weak parasitic recombination takes place in the CBP hole transport layer.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.289-296
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• 1999

The integration of the LSI has been greatly improved and the circuit patters on the LSI are becoming finer line and pitch. The high-density electronic packaging technology is improved. In order to realize the high-density packaging technology, the density of the circuit wiring of the printed circuit boards have also been more dense. The build-up process multilayer printed circuit board technology have a lot of vias, possibilities of the finer conductor wirings and have a freedom of capabilities of wiring design. The build-up process printed circuit boards have the wiring rules which are the pattern width: $100-20\mu\textrm{m}$, the via hole diameter: $100-50\mu\textrm{m}$. There three kinds of build-up processes as far materials and hole drilling. In this paper, the recent technology trends of the build-up printed circuit board technologies are described.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.05a
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• pp.12-17
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• 2003

본 연구에서는 MICP Etching system 을 이용한 Via contact 및 Deep contact hole etch process 특성을 연구하였다. Langmuir probe 를 이용한 MICP source 의 Plasma density & electron temperature 측정하였고 탄소와 플로우르를 포함하는 혼합 Plasma 를 형성하여 RF frequency, wall temperature, chamber gap, gas chemistry 등의 변화에 따른 식각 특성을 조사하였다. Plasma density 는 1000w 에서 $10^{11}$/$cm^3$ 이상의 high density plasma와 uniform plasma 형성을 확인하였고 $CH_{2}F_{2}$와 CO의 적절한 혼합비를 이용하여 Oxide to PR 선택비가 10 이상인 고선택비 조건을 확보하였다. 고선택비 형성에 따라 Polymer 형성이 많이 되었고 이를 개선하기 위하여 반응 챔버의 온도 조절을 통하여 Polymer 증착 방지에 효과적인 것을 확인하였다. MICP source를 이용하여 탄소와 플로우르의 혼합 가스와 식각 챔버의 온도 조절에 의한 선택비 증가를 확보하여 High Aspect Ratio Contact Hole Etch 가능성을 확보하였다.

• 한국지구물리탐사학회:학술대회논문집
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• 2005.09a
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• pp.73-82
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• 2005

We constructed a series of calibration models in the campus of Kangwon National University. A series of experiment for calibrating sonde response as well as casing effect in field measurement. Here we explained the process of construction of calibrating facility which consists of three model holes of different density and three model holes of different diameter. It was discussed the calibration equations obtained from its sonde response calibration test. A density correction chart for different separation of detector from hole wall was suggested, and verified the possibility of determining true density from measurements in cased hole.