• 천문학회보
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• 제40권2호
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• pp.48.1-48.1
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• 2015

Active galactic nuclei (AGNs) are powered by a supermassive black hole with an accretion disk and exhibit prominent broad and narrow emission lines. The unification model AGNs requires the presence of a geometrically and optically thick torus component that hides the broad line region from observers lying in the equatorial direction. The strong far UV radiation characterizing AGN spectra is expected to be scattered inelastically in the torus region to reappear around hydrogen Balmer lines or Paschen lines in the form of broad wings. Adopting a Monte Carlo technique we produce broad wings around $H{\alpha}$, $H{\beta}$ and $Pa{\alpha}$ that are formed through Raman scattering. The widths of the wings are mainly affected by the neutral column density of the torus, and the overall strengths are primarily determined by the covering factor and the column density of the neutral region. It is concluded that deep spectroscopy of AGNs of broad wings around hydrogen emission lines may shed much light on the AGN unification model.

• 한국산학기술학회논문지
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• 제12권5호
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• pp.2267-2271
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• 2011

p-채널 박막트랜지스터에 이용할 수 있는 p-형 산화구리 박막반도체를 얻기 위한 연구를 하였다. 진공열증착방법으로 산화구리 박막을 성막하였으며, 증착 후 열처리 조건을 조절하여 박막트랜지스터의 활성층에 적용 가능한 특성을 가지는 산화구리 박막반도체를 얻었다. 열처리 전에 $10^{22}\;cm^{-3}$ 수준의 전자 이송자농도를 가지던 n-형 박막이 열처리 조건을 최적화함에 따라 $10^{16}\;cm^{-3}$ 수준의 정공 이송자농도를 가지는 p-형 산화물반도체 박막으로 변화하였다.

• 한국자동차공학회논문집
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• 제23권5호
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• pp.471-477
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• 2015

In this study, the property of crack propagation and growth at high tension steel plate existed with center crack is investigated. The behaviors of fracture mechanics due to existence or not of hole near the center crack in specimen and the length of crack length are investigated when the load is applied at the one side end of specimen. Stress, deformation and deformation of this specimen are evaluated through simulation analysis. By the analysis results at this study, stress intensity factors are obtained. The damage happened at machine or structure with crack or defect can be estimated on the basis of study results.

• Journal of Korean Neurosurgical Society
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• 제41권1호
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• pp.11-15
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• 2007

Objective : The authors attempted to confirm the risk factors for recurrent chronic subdural hematoma[CSDH] after simple burr-hole drainage. Methods : A total of 302 patients with CSDH who were treated at our hospital between January 1998 and May 2005 were studied. Various parameters considered for analysis of factors associated with CSDH recurrence; demographic and clinical findings [age, sex, history of seizures, diabetes, vascular diseases], initial and perioperative CT findings [hematoma density, location of catheter tip, post operative intracranial air, intracranial hematoma extension, hematoma width, hematoma site]. Results : Twenty-four patients [7.9%] experienced recurrence, whereas 278 patients [92.1%] did not. Five major risk factors should be considered : 1) layered type by hematoma density, 2) type I, II by location of catheter tip, 3) presence of postoperative intracranial air, 4) cranial base type of intracranial hematoma extension, 5) greater hematoma width. Conclusion : In this study, we report that the incidence of postoperative CSDH recurrence can be reduced by the examination of the hematoma characteristics on initial and perioperative CT findings and by preventing subdural air accumulation during operation. In addition, the location of the catheter tip can be used as a helpful factor in reducing the recurrence.

• 아시안잔디학회지
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• 제13권2호
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• pp.113-124
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• 1999

This study was carried out to know the oviposition preference site of chestnut brown chafer ( CBC ), Adoretus tenuimaculatus and its temporal activity and spatial distribution in green. Larval distribution was also investigated in golf courses for the control of CBC. CBC collected from Yongwon Golf Club in Chinhae, Tongdo Golf Club in Yangsan, Gyeongsan Province, Daegu Golf Club in Gyeongsan, Kyeongbuk Province, Dongrae Golf Club laid more eggs on broableaf of Zoysia matrella than Z. japonica, broadleaf+middleleaf of Z. matrella, Poa pratensis, and P. annua. The number of CBC egg was $19.7\pm$6.7 in Z. japonica,$ 1.7\pm$1.5 in P. pratensis, $1.3\pm$1.5 in sandy loam and $5.7\pm$2.9 in sand. Acitivity time of CBC in a day was the peak at 20:00 and continued to 24:00. CBCs adults were more collected from outside of golf courses whichhad many host plants than roadside courses. Density of white grubs was significantly different in fairway only. CBCs were more collected at tee and fairway than green. Density of white grubs was $54.6\pm$100 in broadleaf of Z. matellia and $37.7\pm$33.8 in P. pratensis at the back tee of the 7th hole in Dongrae Golf Club.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권1호
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• pp.24-29
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• 2000

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.11-20
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• 2008

The structure of 2-bit/cell flash memory device was characterized for sub-50 nm non-volatile memory (NVM) technology. The memory cell has spacer-type storage nodes on both sidewalls in a recessed channel region, and is erased (or programmed) by using band-to-band tunneling hot-hole injection (or channel hot-electron injection). It was shown that counter channel doping near the bottom of the recessed channel is very important and can improve the $V_{th}$ margin for 2-bit/cell operation by ${\sim}2.5$ times. By controlling doping profiles of the channel doping and the counter channel doping in the recessed channel region, we could obtain the $V_{th}$ margin more than ${\sim}1.5V$. For a bit-programmed cell, reasonable bit-erasing characteristics were shown with the bias and stress pulse time condition for 2-bit/cell operation. The length effect of the spacer-type storage node is also characterized. Device which has the charge storage length of 40 nm shown better ${\Delta}V_{th}$ and $V_{th}$ margin for 2-bit/cell than those of the device with the length of 84 nm at a fixed recess depth of 100 nm. It was shown that peak of trapped charge density was observed near ${\sim}10nm$ below the source/drain junction.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.69-76
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• 2005

Interface-trap density, lifetime and Schottky barrier height of erbium-silicided Schottky diode are evaluated using equivalent circuit method. The extracted interface trap density, lifetime and Schottky barrier height for hole are determined as $1.5{\times}10^{13} traps/cm^2$, 3.75 ms and 0.76 eV, respectively. The interface traps are efficiently cured by $N_2$ annealing. Based on the diode characteristics, various sizes of erbium- silicided/platinum-silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from 20 m to 35nm. The manufactured SB-MOSFETs show excellent drain induced barrier lowering (DIBL) characteristics due to the existence of Schottky barrier between source and channel. DIBL and subthreshold swing characteristics are compatible with the ultimate scaling limit of double gate MOSFETs which shows the possible application of SB-MOSFETs in nanoscale regime.

• Composites Research
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• 제25권5호
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• pp.154-158
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• 2012

복합시트의 구조를 변화시켜 흡 차음성에 미치는 영향을 연구하였다. 폴리프로필렌 보드의 표면과 배면에 폴리에틸렌테레프탈레이트 부직포를 핫 프레스로 융착하여 복합시트를 제조하였다. 면밀도가 $0.64kg/m^2$인 부직포를 사용하여 제조한 복합시트의 흡음률은 0.1-0.2의 값을 나타내어 폴리프로필렌 보드의 흡음률에 비해 약 100~400%의 증가를 나타내었다. 폴리프로필렌 보드의 면밀도를 증가시키거나 복합시트 위에 반구형의 홈을 포함하는 경우에 복합시트의 투과손실이 증가하였다. 평판 복합시트와 사인 파형을 가지는 복합시트의 구조를 변화시켜 만든 2가지 복합시트 구조에 따른 흡음률과 차음도의 변화를 조사하였다.

• 대한기계학회논문집B
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• 제31권5호
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• pp.467-472
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• 2007

In this study the penetration distance of liquid phase fuel(i.e. liquid phsae length) was investigated in evaporative field. An exciplex fluorescence method was applied to the evaporative fuel spray to measure and investigate both the liquid and the vapor phase of the injected spray. For accurate investigation, images of the liquid and vapor phase regions were recorded using a 35mm still camera and CCD camera, respectively. Liquid fuel was injected from a single-hole nozzle (l/d=1.0mm/0.2mm) into a constant-volume chamber under high pressure and temperature in order to visualize the spray phenomena. Experimental results indicate that the liquid phase length decreased down to a certain constant value in accordance with increase in the ambient gas density and temperature. The constant value, about 40mm in this study the, is reached when the ambient density and temperature of the used fuel exceed critical condition.