• Korea-Australia Rheology Journal
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• v.19 no.4
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• pp.183-190
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• 2007

Injection molding is one of the most common operations in polymer processing. Good quality products are usually obtained and major post-processing treatment is not required. However, residual stresses which exist in plastic parts affect the final shape and mechanical properties after ejection. Residual stresses are caused by polymer melt flow, pressure distribution, non-uniform temperature field, and density distribution. Residual stresses are predicted in this study by numerical methods using commercially available softwares, $Hypermesh^{TM},\;Moldflow^{TM}\;and\;ABAQUS^{TM}$. Cavity filling, packing, and cooling stages are simulated to predict residual stress field right after ejection by assuming an isotropic elastic solid. Thermo-viscoelastic stress analysis is carried out to predict deformation and residual stress distribution after annealing of the part. Residual stresses are measured by the hole drilling method because the automotive part selected in this study has a complex shape. Residual stress distribution predicted by the thermal stress analysis is compared with the measurement results obtained by the hole drilling method. The molded specimen has residual stress distribution in tension, compression, and tension from the surface to the center of the part. Viscoelastic deformation of the part is predicted during annealing and the deformed geometry is compared with that measured by a three dimensional scanner. The viscoelastic stress analysis with a thermal cycle will enable us to predict long term behavior of the injection molded polymeric parts.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.526-532
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• 2015

We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.3
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• pp.165-169
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• 2002

Silicon wafer is very important accuracy make use semiconductor device substrate. In this research, for the uniformity dopant density distribution obtained to Neutron Transmutation Doping on make use Si in P Doping study work. In this research. we irradiated neutron on FZ silicon wafers which had high resistivity (1000~2000 ${\Omega}$cm), HANARO reactor was utilized resistivity changes due to observed, the generation of neutron irradiation on point defect analyzed, point defect on resistivity changes inquire into the effect. Before neutron irradiation theoretical due to calculated 5 ${\Omega}$-cm, 20.1 ${\Omega}$-cm for HTS hole and 5 ${\Omega}$-cm, 26.5 ${\Omega}$-cm, 32.5 ${\Omega}$-cm for IP3 hole. After neutron irradiation through SRP measurement the designed resistivities were approached, which were 2.1 H-cm for HTS-1, 7.21 ${\Omega}$-cm for HTS-2, 1.79 ${\Omega}$-cm for IP-1, 6.83 ${\Omega}$-cm for IP-2, 9.23 ${\Omega}$-cm for IP-3, respectively. Also after neutron irradiation resistivity changes due to thermal neutron dependent irradiation hole types free.

• Design & Manufacturing
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• v.14 no.3
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• pp.44-49
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• 2020

One of display trends today is development of high pixel density. To get high PPI, a small size of pixel must be developed. RGB pixel is arranged by evaporation process which determines pixel size. Normally, a fine metal mask (FMM; Invar alloy) has been used for evaporation process and it has advantages such as good strength, and low thermal expansion coefficient at low temperature. A FMM has been manufactured by chemical etching which has limitation to controlling the pattern shape and size. One of alternative method for patterning FMM is laser micromachining. Femtosecond laser is normally considered to improve those disadvantages for laser micromachining process due to such short pulse duration. In this paper, a femtosecond laser drilling for thickness of 16 ㎛ FMM is examined. Additionally, we introduce experimental results for controlling taper angle of hole by vibration module adapted in laser system. We used Ti:Sapphire based femtosecond laser with attenuating optics, co-axial illumination, vision system, 3-axis linear stage and vibration module. By controlling vibration amplitude, entrance and exit diameters are controllable. Using vibrating objective lens, we can control taper angle when femtosecond laser hole drilling by moving focusing point. The larger amplitude of vibration we control, the smaller taper angle will be carried out.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2017.05a
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• pp.905-911
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• 2017

Effects of injector position and momentum flux ratio on a vertical jet in a cross flow field were studied qualitatively and shown by using air and water. The experiment was carried out by fixing the momentum flux ratio and varying the position of the injector hole. Conversely, the injector hole position was fixed and the momentum flux ratio was varied. Image visualization was performed by a Shadowgraph technique using a high speed camera. The visualized images were compared for finding differences in spraying through Density Gradient Magnitude Image. It is observed that as the x/d of the apparatus increased the jet break up height decreases and the spray angle also decreases. When x/d is 0, the spray reaches the floor and ceiling at any momentum flux ratio.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.903-906
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• 2011

The electroplating and electro-less plating methods have been applied for the high density chip interconnect of the Copper Pillar Tin Bump (CPTB) preparation. The CPTB was prepared, which had been electroplated about $100{\mu}m$ pitch of copper layer firstly, and then the Tin layer was deposited on the copper pillar surface to protect the oxidation of it. It was also very important to get uniform thickness of electroplated copper layer, though it was difficult and sensitive. In order to control the thickness distribution, it was examined that the current separating disk of Insulating Gate with a hole in the center was installed between electrodes. The current flows through the center hole of the Insulating Gate in the cylindrical electroplating bath and the other parts were blocked to protect current flowing. The main current flowed through the center hole of the Insulating Gate directly to the opposite electrode of wafer disk. As the results, it was verified that the copper layer was thick in the center part of wafer disk with distribution of thinner to the outer part toward edge.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.1
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• pp.35.4-35.4
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• 2019

We have conducted a 22 GHz very long baseline interferometry (VLBI) survey of 281 local (z < 0.05) active galactic nuclei (AGNs) selected from the Swift Burst Alert Telescope (BAT) 70-month ultra hard X-ray (14-195 keV) catalog. The main goal is to investigate the relation between the strengths of black hole accretion and the parsec-scale nuclear jet, which is expected to tightly correlate but has not been observationally confirmed yet. The BAT AGN Spectroscopic Survey (BASS) provides the least biased AGN sample against obscuration including both Seyfert types, hence it makes an ideal parent sample for studying the nuclear jet properties of an overall AGN population. Using the Korean VLBI Network (KVN), the KVN and VERA Array (KaVA), and the Very Long Baseline Array (VLBA), we observed 281 objects with a 22 GHz flux > 30 mJy, detecting 11 targets (~4% of VLBI detection rate). This implies that the fraction of X-ray AGNs which are currently ejecting a strong nuclear jet is very small. Although our 11 sources span a wide range of pc-scale morphological types, from compact to complex, they lie on a tight linear relation between accretion luminosity and nuclear jet luminosity. Our finding may indicate that the power of nuclear jet is directly responsible for the amount of black hole accretion. We also have probed the fundamental plane of black hole activity in VLBI scale (e.g., few milli-arcsecond). The results from our high-frequency VLBI radio study support that the change of jet luminosity and size follows what is predicted by the AGN evolution scenario based on the Eddington ratio (ƛ$_{Edd}$) - column density ($N_H$) plane, proposed by a previous study.

• Polymer(Korea)
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• v.33 no.5
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• pp.407-412
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• 2009

Vacuum deposited N,N-di-1-naphthyl-N,N-diphenyl-1,1'-biphenyl-4,4'-diamine (NPD) as a hole transporting (HTL) materials in OLEDs was placed on PEDOT-PSS, a hole injection layer (HIL). PEDOT-PSS was spin-coated on to the ITO glass. $C_{60}$-doped NPD-$C_{60}$(10 wt%) film was formed via co-evaporation process and the morphology of NPD-$C_{60}$ films was investigated using XRD and AFM. The J - V, L - V and current efficiency of multi -layered devices were characterized. According to XRD results, the deposited $C_{60}$ thin film was partially crystalline, but NPD-$C_{60}$ film was observed not to be crystalline, which indicates that $C_{60}$ molecules are uniformly dispersed in the NPD film. By using $C_{60}$-doped NPD-$C_{60}$ film as a HTL, the current density and luminance of multi-layered ITO/PEDOT-PSS/NPD-$C_{60}/Alq_3$/LiF/Al device were significantly increased by about 80% and its efficiency was improved by about 25% in this study.

• Journal of Biomedical Engineering Research
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• v.30 no.1
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• pp.18-22
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• 2009

Laser has been widely used in various fields of medicine. Recently, noninvasive low-level laser therapeutic medical devices have been introduced in market. However, low-level laser cannot deliver enough photon density to expect positive therapeutic results in deep tissue layer due to the light scattering property in tissue. In order to overcome the limitation, this study was aimed to develop a negative pressure applied low-level laser probe to optimize laser transmission pattern and therefore, to improve photon density in soft tissue. In order to evaluate the possibility of clinical application of the developed laser probe, ex-vivo experiments were performed with porcine skin samples and laser transmissions were quantitatively measured as a function of tissue compression. The laser probe has an air suction hole to apply negative pressure to skin, a transparent plastic body to observe variations of tissue, and a small metallic optical fiber guide to support the optical fiber when negative pressure was applied. By applying negative pressure to the laser probe, the porcine skin under the metallic optical fiber guide is compressed down and, at the same time, low-level laser is emitted into the skin. Finally, the diffusion images of laser in the sample were acquired by a CCD camera and analyzed. Compared to the peak intensity without the compression, the peak intensity of laser increased about $2{\sim}2.5$ times and FWHM decreased about $1.67{\sim}2.85$ times. In addition, the laser peak intensity was positively and linearly increased as a function of compression. In conclusion, we verified that the developed low-level laser probe can control the photon density in tissue by applying compression, and therefore, its potential for clinical applications.

• Journal of Korean Neurosurgical Society
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• v.61 no.1
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• pp.97-104
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• 2018

Objective : Diffusion-weighted magnetic resonance imaging (DW-MRI) has proven useful in the study of the natural history of ischemic stroke. However, the potential of DW-MRI for the evaluation of chronic subdural hematoma (CSDH) has not been established. In this study, we investigated DW-MRI findings of CSDH and evaluated the impact of the image findings on postoperative outcomes of CSDH. Methods : We studied 131 CSDH patients who had undergone single burr hole drainage surgery. The images of the subdural hematomas on preoperative DW-MRI and computed tomography (CT) were divided into three groups based on their signal intensity and density : 1) homogeneous (iso or low) density on CT and homogeneous low signal intensity on DW-MRI; 2) homogeneous (iso or low) density on CT and mixed signal intensity on DW-MRI; and 3) heterogeneous density on CT and mixed signal intensity on DW-MRI. On the basis of postoperative CT, we also divided the patients into 3 groups of surgical outcomes according to residual hematoma and mass effect. Results : Analysis showed statistically significant differences in surgical (A to B : p<0.001, A to C : p<0.001, B to C : p=0.129) and functional (A to B : p=0.039, A to C : p<0.001, B to C : p=0.108) outcomes and treatment failure rates (A to B : p=0.037, A to C : p=0.03, B to C : p=1) between the study groups. In particular, group B and group C showed worse outcomes and higher treatment failure rates than group A. Conclusion : CSDH with homogeneous density on CT was characterized by signal intensity on DW-MRI. In CSDH patients, performing DW-MRI as well as CT helps to predict postoperative treatment failure or complications.