• 제목/요약/키워드: Hole blocking

검색결과 87건 처리시간 0.032초

새로운 정공차폐 층 (Hole blocking layer)으로 DCJTB 도핑된 24MeSAlq를 이용한 백색유기발광다이오드 (White Organic Light-Emitting Diodes Using DCJTB-Doped 24MeSAlq as a New Hole-Blocking Layer)

  • 김미숙;임종태;염근영
    • 한국재료학회지
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    • 제16권4호
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    • pp.231-234
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    • 2006
  • To obtain balanced white-emission and high efficiency of the organic light-emitting diodes (OLEDs), a deep blue emitter made of N,N'-diphenyl-N,N'-bis(1-naphthyl)- (1,1'-biphenyl)-4,4'-diamine (NPB) emitter and a new red emitter made of the Bis(2,4 -dimethyl-8-quinolinolato)(triphenylsilanolato)aluminum(III) (24MeSAlq) doped with red fluorescent 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H -pyran (DCJTB) were used and the device was tuned by varying the thickness of the DCJTB-doped 24MeSAlq and $Alq_3$. For the white OLED with 10 nm thickness DCJTB (0.5%) doped 24MeSAlq and 45 nm thick $Alq_3$, the maximum luminance of about 29,700 $Cd/m^2$ could be obtained at 14.8 V. Also, Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.28) at about 100 $Cd/m^2$, which is very close to white light equi-energy point (0.33, 0.33), could be obtained.

Zn-complex를 이용한 OLED 효율향상에 관한 연구 (A Study on the efficiency improvement of OLED using Zn-Complex)

  • 장윤기;김병상;이범종;권영수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.23-24
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    • 2006
  • We have synthesized electroluminescence materials. including [2-(2-hydroxyphenyl)benzoxazole] (Zn(HPB)$_2$), [(2-(2-hydroxyphenyl)benzoxazole)(8-hydoxyquinoline)] (Zn(HPB)q) and [(1, 10-phenanthroline)(8-hydroxyquinoline)] Zn(phen)q. The ionization potential (IP) and electron affinity (EA) of each Zn-complex was measured using cyclic-voltammetry (C-V). Basing on the consideration of matched in the energy levels of the materials. We investigated the electron transporting properties of Zn(HPB)q and Zn(phen)q compared with $Alq_3$, and also we investigated the hole blocking properties of Zn(HPB)$_2$, compared with BCP. As a result, we used Zn-complex to enhance the performance of OLED. Therefore, we demonstrate that Zn(HPB)q and Zn(phen)q are useful as an electron transporting material. Zn(HPB)$_2$ is also good a hole blocking material.

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Synthesis of 5,6-Dihydro[1,10]phenanthroline Derivatives and Their Properties as Hole-Blocking Layer Materials for Phosphorescent Organic Light-Emitting Diodes

  • Lee, Hyo-Won;An, Jung-Gi;Yoon, Hee-Kyoon;Jang, Hyo-Sook;Kim, Nam-Gwang;Do, Young-Kyu
    • Bulletin of the Korean Chemical Society
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    • 제26권10호
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    • pp.1569-1574
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    • 2005
  • To develop new hole-blocking materials for phosphorescent organic light-emitting diodes (PhOLEDs), 5,6-dihydro-2,9-diisopropyl-4,7-diphenyl[1,10]phenanthroline (1) and 5,6-dihydro-2,9-diisopropyl-4-(4-methoxyphenyl)-7-phenyl[1,10]phenanthroline (2) were synthesized. While the absorption spectrum of 1 is very similar to that of 2, the photoluminescence spectrum of 1 has the feature of the narrower and blue-shifted blueviolet emission at the peak of 356 nm compared to that of 2. The HOMO and LUMO energy levels of 1 and 2 were estimated from the measurement of cyclic voltammetry, and 1 has the appropriate levels for a holeblocking layer (HBL). The use of 1 as a HBL in a green PhOLED led to good efficiency of 23.6 cd/A at 4.4 mA/$cm^2$.

GaN 기반 발광 다이오드(LED)의 특성 분석 (Characteristic analysis of GaN-based Light Emitting Diode(LED))

  • 이재현;염기수
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2012년도 춘계학술대회
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    • pp.686-689
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    • 2012
  • 본 논문에서는 ISE-TCAD를 이용하여 GaN 기반의 LED특성을 분석하였다. LED는 GaN 버퍼층을 기반으로 GaN 장벽과 InGaN 양자우물로 구성된 활성 영역, AlGaN EBL(Electron Blocking Layer)과 AlGaN HBL(Hole Blocking Layer)로 이루어져 있다. Auger 재결합률, 양자 우물의 폭과 수, EBL의 Al 몰분율의 변화에 따른 LED의 출력 전력 특성을 분석하고 효율 개선을 위한 몇 가지 기준을 제시하였다.

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양자 우물 구조가 GaN 기반 LED 특성에 미치는 영향 (The Effect of Quantum Well Structure on the Characteristics of GaN-based Light-Emitting Diode)

  • 이재현;염기수
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2012년도 추계학술대회
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    • pp.251-254
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    • 2012
  • 본 논문에서는 양자 우물 구조 변화에 따른 GaN 기반 LED의 출력 특성을 분석하였다. 사용된 LED의 기본 구조는 GaN 버퍼층을 기반으로 GaN 장벽과 InGaN 양자 우물로 이루어진 활성 영역이 AlGaN EBL(Electron Blocking Layer)과 AlGaN HBL(Hole Blocking Layer) 사이에 구성되어 있다. ISE-TCAD를 이용하여 LED 활성영역의 양자 우물의 두께와 개수, 장벽의 도핑 변화에 따른 출력 전력, 내부 양자 효율 특성을 분석하였다.

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Electrophosphorescent organic light-emitting diodes with modified hole blocking layer

  • Shin, Y.C.;Baek, H.I.;Lee, C.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1042-1045
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    • 2006
  • The electrical and optical properties of electrophosphorescent organic light-emitting diodes (OLEDs) with modified hole blocking layer (HBL) were investigated. Well-known 2,9-dimethyl-4,7- diphenyl-1,10-phenanthroline (BCP) HBL is mixed with electrophosphorescent host material (4,4'-N,N'- dicarbazole-biphenyl: CBP) or electrophosphorescent dopant material (fac-tris(2-phenylpyridine) iridium: $Ir(ppy)_3$) or both. The highest external quantum efficiency was obtained in the device with $BCP-CBP-Ir(ppy)_3$ mixed HBL and we attribute this result to the additional charge recombination in mixed-HBL.

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Interfacially Controlled Hybrid Thin-film Solar Cells Using a Solution-processed Fullerene Derivative

  • 남상길;송명관;김동호;김창수
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.190.2-190.2
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    • 2014
  • We report the origin of the improvement of the power conversion efficiency (PCE) of hybrid thin-film solar cells when a soluble C60 derivative, [6,6]-phenyl-$C_{61}$-butyric acid methyl ester (PCBM), is introduced as a hole-blocking layer. The PCBM layer could establish better interfacial contact by decreasing the reverse ark-saturation current density, resulting in a decrease in the probability of carrier recombination. The power conversion efficiency of this optimized device reached a maximum value of 8.34% and is the highest yet reported for hybrid thin-film solar cells.

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The Fabrication of OLED using PBD as a Hole Blocking Layer

  • Kang, Min-Woong;Kim, Jong-Sung;Kwon, Sang-Jik;Lee, Hoo-Kyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.784-787
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    • 2002
  • Oganic light emitting diodes (OLEDs) using PBD(2-(4-biphenylyl)-5-(4-tert-butylpheny)-1,3,4oxadiazole) as a hole blocking layer were fabricated and their device performances were investigated. The devices have a structure of glass substrate ${\setminus}$ indium tin oxide (ITO) ${\setminus}$ TPD(HTL)${\setminus}$PBD,BCP(HBL)${\setminus}$Alq3(EIL)${\setminus}$Mg:Ag(cathode). In this work Bathocuproine(BCP:2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline) and PBD which were previously known as a good ETL material were used as a HBL. By employing HBL, the luminance and quantum efficiency of OLEDs could be improved due to the increase of recombination probability of electrons and holes.

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The fabrication of europium complex electroluminescence using BCP as hole blocking layer

  • Liang, Yujun;Zhang, Hongjie;Kim, Beung-Kwon;Jung, Young-Ho;Park, Jo-Yong;Myung, Kwang-Shik;Khatkar, S.P.;Han, Sang-Do
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.578-580
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    • 2002
  • A bright and highly monochromatic red organic electroluminescent device based on a poly(N-vinylcarbazole) host was made. The device structure consists of poly(N-vinylcarbazole) dispersed with a europium complex as an emitting layer and a hole blocking layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). The EL cell exhibited just characteristic emission of europium ion.

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Novel Host materials for Phosphorescent OLEDs with long lifetime

  • Kim, Young-Hoon;Yu, Eun-Sun;Kim, Nam-Soo;Jung, Sung-Hyun;Kim, Hyung-Sun;Lee, Ho-Jae;Kang, Eui-Su;Chae, Mi-Young;Chang, Tu-Won
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.549-552
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    • 2008
  • We have developed a novel bipolar host material with both electron and hole transporting characteristics. Since CGH(Cheil Green Host) has some electron transporting characteristics, it shows increased luminance efficiency in device including TCTA and without HBL(hole blocking layer:BAlq). Maximum power efficency of CGH was 27.4lm/W at the device structure ITO/DNTPD(60)/NPB(20)/TCTA(10)/EML(30)/Alq3(20)/LIF(1)/Al. We measured device performance again without HBL. The result of CGH showing 26.0lm/W is outstanding compared to that of CBP showing 19.1lm/W without holeblocking layer. We also measured lifetime and found to be 205hr at 3000nit, that is significant result compared to the life time of CBP device showing 82hr. CGH shows high device performance with holeblocking layer. Moreover, it shows better device performance and life time than those of CBP without holeblocking.

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