• Ceramist
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• v.23 no.1
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• pp.16-26
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• 2020

Recently, polymer-metal composite (IPMC)-based ionic artificial muscle has been drawing a huge attention for its excellent soft actuator performance having outstanding soft actuator performance with efficient conversion of electrical energy to mechanical energy under low working voltage. In addition, light, flexible and soft nature of IPMC and high bending strain response enabled development of versatile sensor application in association with soft actuator. In this paper, current issues of IPMC were discussed including standardizing preparation steps, relaxation under DC bias, inhibiting solvent evaporation, and improving poor output force. Solutions for these drawbacks of IPMC have recently been suggested in recent studies. After following explanation of the IPMC working mechanism, we investigate the main factors that affect the operating performance of the IPMC. Then, we reviewed the optimized IPMC actuator fabrication conditions especially for the preparation process, additive selection for a thicker membrane, water content, solvent substitutes, encapsulation, etc. Lastly, we considered the pros and cons of IPMCs for sensor application in a theoretical and experimental point of view. The strategies discussed in this paper to overcome such deficiencies of IPMCs are highly expected to provide a scope for IPMC utilization in soft robotics application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.734-737
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• 2004

The metal-ferroelectric-semiconductor (MFS) structure is widely studied for nondestructive readout (NDRO) memory devices, but conventional MFS structure has a critical problem. It is difficult to obtain ferroelectric films like PZT on Si substrate without interdiffusion of impurities such as Pb, Ti and other elements. In order to solve these problems, the metal-ferroelectric-insulator-semiconductor (MFIS) structure has been proposed with a buffer layer of high dielectric constant such as MgO, $Y_2O_3$, and $CeO_2$. In this study, the etching characteristics (etch rate, selectivity) of MgO thin films were etched using $Cl_2/Ar$ plasma. The maximum etch rate of 85 nm/min for MgO thin films was obtained at $Cl_2$(30%)/Ar(70%) gas mixing ratio. Also, the etch rate was measured by varying the etching parameters such as ICP rf power, dc-bias voltage, and chamber pressure. Plasma diagnostics was performed by Langmuir probe (LP) and optical emission spectroscopy (OES).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.1
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• pp.70-77
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• 1999

A miniaturized voltage controlled oscillator using multi-layer ceramic technology at PCS frequency band is designed and fabricated. To improve the phase noise characteristics and to reduce the size, the strip line which is embedded in a high performance multi-layer ceramic substrate is used as an inductor of VCO. And the fabricated VCO is very small size ($6mm\times6mm\times2mm$). At the bias condition of 3.3 V and 9mA, the output power and phase noise in the operating frequency range of 1,720~1,780 MHz are -3.7 dBm and -95 dBc/Hz at 10 KHz offset from the carrier, respectively. The phase noise and size are better than the conventional VCO using glass epoxy substrate.

• Bulletin of the Korean Chemical Society
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• v.23 no.5
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• Journal of Power Electronics
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• v.16 no.2
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• pp.643-653
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• 2016

The conventional methods used to evaluate battery state-of-charge (SOC) cannot accommodate the chemistry nonlinearities, measurement inaccuracies and parameter perturbations involved in estimation systems. In this paper, an impedance-based equivalent circuit model has been constructed with respect to a LiFePO₄ battery by approximating the electrochemical impedance spectrum (EIS) with RC circuits. The efficiencies of approximating the EIS with RC networks in different series-parallel forms are first discussed. Additionally, the typical hysteresis characteristic is modeled through an empirical approach. Subsequently, a methodology incorporating an H-infinity observer designated for open-circuit voltage (OCV) observation and a hysteresis model developed for OCV-SOC mapping is proposed. Thereafter, evaluation experiments under FUDS and UDDS test cycles are undertaken with varying temperatures and different current-sense bias. Experimental comparisons, in comparison with the EKF based method, indicate that the proposed SOC estimator is more effective and robust. Moreover, test results on a group of Li-ion batteries, from different manufacturers and of different chemistries, show that the proposed method has high generalization capability for all the three types of Li-ion batteries.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.185-189
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• 2001

In this paper, since the research on the etching of SrBi$_2$Ta$_2$$O_{9}$(SBT) thin film was few (specially Cl$_2$-base) we had studied the surface reaction of SBT thin films. We have used the OES(optical emission spectroscopy) in high density plasma etching as a function of RF power, dc bias voltage, and Cl$_2$/(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction. The change of Cl radical density that was measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhanced to increase the etch rates SBT thin films. These results were confirmed by XPS(x-ray photoelectron spectroscopy) analysis.s.

• Journal of the Korean Society for Heat Treatment
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• v.14 no.5
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• pp.292-296
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• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.287-291
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• 2012

We investigated the etching characteristics of TaN thin films in an $O_2/BCl_3/Cl_2/Ar$ gas using a high density plasma (HDP) system. A maximum etch rate of the TaN thin films and the selectivity of TaN to $SiO_2$ were obtained as 172.7 nm/min and 6.27 in the $O_2/BCl_3/Cl_2/Ar$ (3:2:18:10 sccm) gas mixture, respectively. At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. The chemical states on the surface of the etched TaN thin films were investigated using X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched TaN thin films. These surface analyses confirm that the surface of the etched TaN thin film is formed with the nonvolatile by-product.

• 연구논문집
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• s.30
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• pp.147-157
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• 2000

The filtered vacuum arc source (FVAS), which is adopted by magnetic filtering methode to remove the macro-particle in vacuum arc plasma, was composed of a torus structure with bending angle of 60 degree. The radius of torus was 266 mm, the radius of plasma duct was 80 mm and the total length was 600 mm. The magnet parts were consisted of one permanent magnet, one magnetic yoke and five solenoid magnets. The plasma duct was electrically isolated from the ground so that a bias voltage could be applied. The baffles inside plasma duct were installed in order to prevent the recoil effect of macro-particles. Graphite was used as the cathode material to coat the amorphic diamond film and its diameter was 80 mm. The amorphic diamond film attracts much attention due to its excellent mechanical, optical and tribological properties suitable for wide range of applications. The effects of solenoid magnet in plasma extraction were studied by computer simulation and experiment using Taguchi's method. The source and extraction magnet affected the arc stabilization. The extraction beam current was maximized with low value of the source magnet current and high value of the filtering magnet current. Optimum deposition condition was obtained when the currents of arc discharge, source, extraction, bending, deflection and outlet magnet were 30 A, 1 A, 3 A, 5 A, and 5 A, respectively.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1589-1592
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• 1994

We developed the ion plating system, consisted of the Facing Target Magnetron Sputtering System and the r.f, electrode of the coil type, which was available to control the reactive and the adhesion between thin film and substrate, and studied about the discharge characteristics and the optimum condition in order to form the high quality thin film. The characteristics of discharge and plasma was measured as Double Probe and Electrostatic Retarding Grid Analyzer. The incident ion energy on the substrate was increased as the increasing r.f power, bias voltage. By the r.f electrode, the ionization rate of the sputtered particles was about 75%, and the mean incident ion energy depend on the value which was difference between the plasma potential and biased substrate potential.