• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1108-1111
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• 2007

OLED driving voltage shift can reduce the OLED display lifetime, especially for digitally driven AMOLED. By operating OLED at high frequency, we were able to suppress OLED voltage shift degradation, expecting improved AMOLED lifetime. We describe frequency dependence of voltage shift obtained from bias stress test of OLED.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1351-1352
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• 2006

In this paper, the impedance properties of degraded thyristor with heat and voltage were presented. As degraded thyristor, 8 thyristors with each other different reverse blocking voltage used. Its impedance and resistance properties were measured from frequency 100Hz to 10MHz applied with bias voltage from 0V to 40V. As a result, at low frequency region, that is, at the frequency 100-10kHz, the abrupt increasement of its capacitance was confirmed. And also, at high frequency region, the capacitance peak move toward low frequency in the region of frequency 4 - 6MHz as degradation of thyristor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.131-132
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• 2005

In this paper, the capacitance properties of degraded thyristor with temperature and voltage were presented. As degraded thyristor, 8 thyristors with each other different reverse blocking voltage used. Its impedance and resistance properties were measured from frequency 100Hz to 10MHz applied with bias voltage from 0V to 40V. As a result, at low frequency region, that is, at the frequency 100 - 10kHz, the abrupt increasement of its capacitance was confirmed. And also, at high frequency region, the capacitance peak move toward low frequency in the region of frequency 4 - 6MHz as degradation of thyristor.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.4
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• pp.240-248
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• 2009

Moore's law has driven silicon technology scale down aggressively, and it results in significant increase of leakage current on nano-meter scale CMOS. Especially, in mobile devices, leakage current has been one of designers' main concerns, and thus many studies have introduced low power methodologies. However, there are few studies to minimize implementation cost in the mixed use of the methodologies to the best of our knowledge. In this paper, we introduce industrial applications of low power design methodologies for the decrease of leakage current. We focus on the design cost reduction of power gating and reverse body bias when used together. Also, we present voltage scale as an alternative to reverse body bias. To sustain gate leakage current, we discuss the adoption of high-$\kappa$ metal gate, which cuts gate leakage current by a factor of 10 in 32 nm CMOS technology. A 45 nm mobile SoC is shown as the case study of the mixed use of low power methodologies.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.244-244
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• 1999

Liquid Crystal Displays(LCDs) 투명성 전도막으로 사용하는 Indium Tin Oxide (ITO)의 고밀도 식각특성을 조사하였다. 특히 ITO식각의 경우, pixel electrode 전극에서 사용되는 underlayer인 SiO2, Si3N4와의 최적의 선택비를 얻는데 중점을 두고 있다. 따라서 본 실험에서는 Inductively Coupled Plasma(ICP)를 이용하여 source power, gas combination, bias voltage, pressure 및 기판온도에 따른 ITO의 식각 특성과 이의 underlayer인 SiO2, Si3N4와의 선택비를 조사하였다. Ar과 CH4를 주된 식각가스로서 사용하였으며 첨가가스로는 O2와 HBr를 사용하였다. ITO의 식각특성을 이해하기 위하여 Quadruple Mass Spectrometry(QMS), Optical emission spectroscopy(OES) 이용하였으며, 식각된 sample의 잔류물을 조사하기 위하여 X-ray photoelectron spectroscopy(XPS)를 이용하여 분석하였다. Ar gas에 적정량의 CH4 혼합이 순수한 Ar 가스로 식각한 경우에 비하여 ITO와 SiO2, Si3N4의 선택비가 높았으며, 더 높은 식각 선택비를 얻기 위하여 Ar/CH 분위기에서 첨가가스 O2, HBr을 사용하였다. Source power 및 bias 증가에 따라 ITO의 식각률은 증가하나, underlayer와의 선택비는 감소함을 보였다. 본 실험에서 측정된 ITO의 high 식각률은 약 1500$\AA$/min이며, SiO2, Si3N4와의 high selectivity는 각각 7:1, 12:1로 나타났다. ITO의 etchrate 및 선택비는 source power, bias, pressure, CH 가스첨가에 의존하였지만 기판온도에는 큰 변화가 없음을 관찰하였다. 또한 적정량의 가스조합으로 식각된 시편의 잔류물을 줄일 수 있었다.

• 제어로봇시스템학회:학술대회논문집
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• 1997.10a
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• pp.464-467
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• 1997

In this paper, a high precision track following control algorithm is proposed for micro electrostatic actuator considering of the application for hard disk drive. The micro electrostatic actuator proposed has nonlinear voltage-displacement characteristic in a working range of 0.8.mu.m and has uni-directional movement. Mid range reference and open-loop bias are proposed for the revision of negative position error, and inverse model for linearization.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.9-11
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• 2000

To increase the device linearities and the breakdown-voltages of FETs, Al$\sub$0.25/ Ga$\sub$0.75/AS / In$\sub$0.25/Ga$\sub$0.75/As / Partially doped channel FET(DCFET) structures are proposed. The metal- insulator -semiconductor (MIS) like structures show the high gate-drain breakdown voltage(-20 V) and high linearities. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• Journal of Electrical Engineering and Technology
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• v.13 no.2
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• pp.781-789
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• 2018

This paper proposes a new approach utilizing empirical mode decomposition (EMD) reconstruction to process vibration signals of a transformer under DC bias caused by high voltage direction transmission (HVDC), which is the potential cause of additional vibration and noise from transformer. Firstly, the Calculation Method is presented and a 3D model of transformer is simulated to analyze transformer deformation characteristic and the result indicate the main vibration is produced along axial direction of three core limbs. Vibration test system has been built and test points on the core and shell of transformer have been measured. Then, the signal reconstruction method for transformer vibration based on EMD is proposed. Through the EMD decomposition, the corrupted noise can be selectively reconstructed by the certain frequency IMFs and better vibration signals of transformer have been obtained. After EMD reconstruction, the vibrations are compared between transformer in normal work and with DC bias. When DC bias occurs, odd harmonics, vibration of core and shell, behave as a nonlinear increase and the even harmonics keep unchanged with DC current. Experiment results are provided to collaborate our theoretical analysis and to illustrate the effectiveness of the proposed EMD method.

• Korean Chemical Engineering Research
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• v.43 no.4
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• pp.531-536
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• 2005

Inductively coupled plasma reactive ion etching of CoTb and CoZrNb magnetic materials with the photoresist mask was performed using $Cl_2/Ar$ and $C_2F_6/Ar$ gas mixtures and characterized in terms of etch rate and etch profile. As the concentrations of $Cl_2$ and $C_2F_6$ gases increased, the etch rates of magnetic films decreased and the etch slopes became slanted. The $Cl_2/Ar$ gas was more effective in obtaining fast etch rate and steep sidewall slope than the $C_2F_6/Ar$ gas. As the coil rf power and dc bias increased, fast etch rate and steep etch slope were obtained but the redeposition on the sidewall was observed. This is due to the increase of ion and radical densities in plasma with increasing the coil rf power and the increase of incident ion energy to the substrate with increasing the dc bias voltage. By applying high density reactive ion etching to magnetic tunnel junction stack containing various magnetic films and metal oxide, steep etch slope and clean etch profile without redeposition were obtained.