• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1176-1178
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• 2007

A novel integrated a-Si:H gate driver with high reliability has been designed and simulated. Since the a-Si:H TFT is easily degraded by gate bias stress, we should optimize the circuit considering the threshold voltage shift. The conventional circuit shows voltage drop at the input stage by threshold voltage of the TFT, however, the proposed circuit dose not shows voltage drop and keeps constant regardless of threshold voltage shift of the TFT.

• 한국정보통신학회논문지
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• 제5권1호
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• pp.166-172
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• 2001

본 논문에서는 INMARSAT-B형 위성통신용 광대역 수신단을 저잡음증폭기와 고이득증폭기로 구성하였다. 저잡음증폭기의 입력단 정합회로는 저항 결합회로의 형태로 설계하였으며, 전원회로는 저잡음 특성이 우수한 자기 바이어스 회로를 사용하였다. 수신단 이득을 향상시키기 위해서 고이득증폭기는 양단 정합된 단일 증폭기 형태로 제작하였으며, 바이어스 안정화 저항을 사용하여 회로의 전압강하 및 전력손실을 가능한 줄이고 온도 안정성을 고려하여 능동 바이어스 회로를 사용하였으며, 스퓨리어스를 감쇠시키기 위해서 저잡음증폭기와 고이득증폭기사이에 대역통과 필터를 사용하였다. 1525~1575 MHz 대역에서 60 dB 이상의 이득, 1.8:1 이하의 입.출력 정재파비를 나타내었으며, 특히 1537.5 MHz에서 입력신호의 크기가 -126.7 dBm일 때1.02 kHz 떨어진 점에서의 C/N비가 45.23 dB/hz의 측정결과를 나타냄으로써 설계시 목표로 했던 사양을 모두 만족시켰다.

• Journal of electromagnetic engineering and science
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• 제17권2호
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• pp.105-107
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• 2017

The self-biasing circuit through a feedback resistor is applied to a gallium nitride (GaN) distributed power amplifier (PA) monolithic microwave circuit (MMIC). The self-biasing circuit is a useful scheme for biasing depletion-mode compound semiconductor devices with a negative gate bias voltage, and is widely used for common source amplifiers. However, the self-biasing circuit is rarely used for PAs, because the large DC power dissipation of the feedback resistor results in the degradation of output power and power efficiency. In this study, the feasibility of applying a self-biasing circuit through a feedback resistor to a GaN PA MMIC is examined by using the high operation voltage of GaN high-electron mobility transistors. The measured results of the proposed GaN PA are the average output power of 41.1 dBm and the average power added efficiency of 12.2% over the 6-16 GHz band.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• 한국통신학회논문지
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• 제21권12호
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• pp.3215-3226
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• 1996

In this paper a K-band harmonic oscillator competitive to ordinary Push-Push type oscillators is introduced. This oscillator is composed of two-X-band dielectric resonance circuits. To favor its harmonic generation, the load effect and the bias effect are studied to allow the maximum harmonic distortion. As results, the dielectric resonated load and the class A bias are used for the 2nd harmonic generation. analytical study for modelling of voltage controlled dielectric resonator is carried out with theoretical background. The performance of the circuit is evaluated by simulation using harmonic balanced method. The novel structure has ont only a voltage tuning circuit but also an output port at fundamental frequency as the function of prescaler for phase lockede loop application on the just single oscillation structure. In experimentation, the output freqneyc of the 2nd harmonic signal is 20.5GHz and the maximum power level of output is +5.5dBm without additional post amplifiers. the harmonic oscillator exhibits -30dBc of high fundamental frequency rejection without added extra filters. The phase noise of -90dBc/Hz at 100kHz off-carrier has been achieved under free running condition, that satisfies phase noise requirement of IESS 308. The proposed oscillator may be utilized as the clean and stable fixed local oscillator in Transmit Block Upconvertor(TBU) or Low oise Block downconvertor(LNB) for K/Ka-band digital communications and satellite broadcastings.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1572-1575
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• 1996

A new type $Cu_{x}N/Cu/Cu_{x}N$ thin film electrode material with high adhesion to glass was developed by the dc reactive planar magnetron sputtering system for the PDP(Plasma Display Panel). The adhesive force of the $Cu_{x}N$ thin film was in the range of $20{\sim}40(N)$ under the conditions of the $N_2$ partial pressure of 15%, discharge current of 70mA, discharge voltage of 450V and substrate bias voltage of -100V. The adhesive force was depended on the $N_2$ partial pressure, discharge current and substrate bias voltage.

• Journal of Power Electronics
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• 제14권3호
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• pp.564-571
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• 2014

Rotor initial position is an important factor affecting the control performance of electrically excited synchronous motors. This study presents a novel method for estimating rotor initial position based on sliding discrete Fourier transform (sDFT). By injecting an ac excitation into the rotor winding, an induced voltage is generated in stator windings. Through this voltage, the stator flux can be obtained using a pure integral voltage model. Considering the influence from a dc bias and an integral initial value, we adopt the sDFT to extract the fundamental flux component. A quadrant identification model is designed to realize the accurate estimation of the rotor initial position. The sDFT and high-pass filter, DFT, are compared in detail, and the contrast between dc excitation and ac injection is determined. Simulation and experimental results verify that this type of novel method can eliminate the influence of dc bias and other adverse factors, as well as provide a basis for the control of motor drives.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.228-230
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• 1994

A Spotter ion Plating(SIP) system with a r. f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The discharge voltage-discharge characteristics curves of a FTS source could be characterized by the fern of $I{\propto}V^n$ with n in the range of $8{\sim}12$. The energy of ions incident on the substrate depended on the sheath potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of $30{\sim}50N$, and markedly influenced by substrate bias voltage.

• Journal of Yeungnam Medical Science
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• 제6권2호
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• pp.47-55
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• 1989

고빈도 진동환기가 동맥혈의 가스분압에 미치는 영향을 알아보고자 저자들은 9마리의 고양이를 대상으로 진동빈도, 일회분출량 및 bias flow를 다양하게 변화시켜 아래와 같은 결과를 얻었다. 1) 일회분출량과 bias flow를 고정시킨 후 진동빈도를 점차 증가시켜 도 $PaCO_2$의 변동은 없었다(Table 1). 2) 진동빈도를 고정시킨 후 일회분출량과 bias flow를 변화시켜 관찰하였던 바 $PaCO_2$는 bias flow의 변화와는 상관관계가 없으나, 일회분출량의 변화와는 유의한 상관관계가 있었다(p<0.01)(Table 2, Fig. 1). 3) $PaCO_2$는 진동빈도를 15Hz로 고정시킨 상태하에서는 1회 분출량 및 bias flow를 증가시켜도 큰 변동없이 정상으로 유지되었다(Table 2). 이상의 결과로 고빈도 진동환기법에서 $PaCO_2$의 결정인자는 진동빈도와 bias flow와는 무관하였고 일회분출량과는 상관관계가 있음을 알 수 있었다.

• 한국결정성장학회지
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• 제9권5호
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• pp.521-526
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• 1999

산화막 트랩은 스트레스 바이어스 전압에 의해 산화막 계면과 산화막 안에 생성됨을 조사하였다. 이러한 실험은 게이트 면적 1$10^{-3}\textrm{cm}^2$를 갖는 산화막 두께 범위가 113.4$\AA$에서 814$\AA$까지의 산화막 안에서 상대적 트랩 위치를 결정하였다. 트랩은 캐소우드 부근에 음전하, 애노우드 부근에 양전하로 충전되어 있다. 트랩의 전하상태는 스트레스 고전압 인가 후 낮은 전압인가에 의해 쉽게 변화되었다. 고전압 스트레스에 의해 발생된 트랩의 산화막 전하상태는 양 또는 음전하를 포함한다.