한국정보디스플레이학회:학술대회논문집
- 2007.08b
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- Pages.1176-1178
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- 2007
A novel integrated a-Si:H gate driver
- Lee, Jung-Woo (Development Center, LCD Business, Samsung Electronics CO.,LTD) ;
- Hong, Hyun-Seok (Development Center, LCD Business, Samsung Electronics CO.,LTD) ;
- Lee, Eung-Sang (Development Center, LCD Business, Samsung Electronics CO.,LTD) ;
- Lee, Jung-Young (Development Center, LCD Business, Samsung Electronics CO.,LTD) ;
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Yi, Jun-Shin
(Sungkyunkwan University)
;
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Bae, Byung-Seong
(School of Display Eng., Hoseo University)
- Published : 2007.08.27
Abstract
A novel integrated a-Si:H gate driver with high reliability has been designed and simulated. Since the a-Si:H TFT is easily degraded by gate bias stress, we should optimize the circuit considering the threshold voltage shift. The conventional circuit shows voltage drop at the input stage by threshold voltage of the TFT, however, the proposed circuit dose not shows voltage drop and keeps constant regardless of threshold voltage shift of the TFT.