• Journal of Information Display
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• 제13권1호
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• pp.1-6
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• 2012

Decreasing the thermal resistance is the critical issue for high-brightness light-emitting diodes. In this paper, the effects of some design factors, such as chip size (24 and 35 mil), substrate material (AlN and high-temperature co-fired ceramic), and die-attach material (Ag epoxy and PbSn solder), on the thermal-dissipation characteristics were investigated. Using the thermal transient method, the temperature sensitivity parameter, $R_{th}$ (thermal resistance), and junction temperature were estimated. The 35-mil chip showed better thermal dissipation, leading to lower thermal resistance and lower junction temperature, owing to its smaller heat source density compared with that of the 24-mil chip. By adopting an AlN substrate and a PbSn solder, which have higher thermal conductivity, the thermal resistance of the 24-mil chip can be decreased and can be made the same as that of the 35-mil chip.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.628-635
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• 2004

The characteristic of thin film resistor with low TCR( temperature coefficient of resistance ) and high precision are studied. The thin film resistor for 1/4W was fabricated and characteristic of these resistors was investigated. The fabricated device had the thickness of $2.48{\leqq}$ and the resistivity of $0.27{\omega}mm$. The electrical characteristic was evaluated by HP 4339B and 4284A instruments with HP l6339A. The profile of trimmed structure was also measured by non contact interferometer. The change of resistance and TCR increased with increasing roughness and resistance. To reduce the effect of stress annealing treatment was performed in the range of 563 to 623 K after trimming. The characteristic was improved after annealing. It is expected the fabricated device can be useful for high precision and low TCR. Fabricated thin film resistor has average deviation of resistance less than $0.35{\%}$ and TCR within 60.60ppm/K.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2017년도 제48회 춘계학술대회논문집
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• pp.1192-1195
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• 2017

본 논문은 엔진 시험시 엔진의 후단에 설치되어 엔진 내부의 상태를 감시하는 영상장치의 내열 특성에 관한 것으로, 엔진 시험설비에 사용되는 영상프로브 소개 및 개발에 관한 내용을 담고 있다. 엔진 후단의 영상장치는 고온고압 환경에 노출되어 있어서 장치형상 변경 및 냉각수 공급으로 장치의 안정성을 확보해야 한다. 국방과학연구소의 엔진 시험 장치의 후단에 영상프로브가 설치되어 있으며, 내열특성을 반영하여 설계하여 장치의 안정성을 확보하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.318-318
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• 2012

A graphene layer is most important materials in resent year to enhance the electrical properties of semiconductor device due to high mobility, flexibility, strong mechanical resistance and transparency[1,2]. The resistance switching memory with the graphene layer have been reported for next generation nonvolatile memory device[3,4]. Also, the graphene layer is able to improve the electrical properties of memory device because of the high mobility and current density. In this study, the resistance switching memory device with metal-oxide nano-particles embedded in polyimide layer on the graphene mono-layer were fabricated. At first, the graphene layer was deposited $SiO_2$/Si substrate by using chemical vapor deposition. Then, a biphenyl-tetracarboxylic dianhydride-phenylene diamine poly-amic-acid was spin coated on the deposited metal layer on the graphene mono-layer. Then the samples were cured at $400^{\circ}C$ for 1 hour in $N_2$ atmosphere after drying at $135^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was done by a thermal evaporator. The electrical properties of device were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. We will discuss the switching mechanism of memory device with metal-oxide nano-particles on the graphene mono-layer.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.953-958
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• 2001

The antifuse is a semi-permanent memory device like a ROM which shows the open or short state, and a switch device connecting logic blocks selectively in FPGA. In addition, the antifuse has been used as a logic device to troubleshoot defective memory cells arising from SDRAM processing. In this study, we have fabricated ONO antifuses consisted of PIP structure. The antifuse shows a high resistance more than several G Ω in the normal state, and shows a low resistance less than 500 Ω after program. The program resistance variation according to temperature shows the very stable value of $\pm$20 Ω. At this time, its program voltage shows 6.7∼7.2 V and the program is performed within 1 second. Therefore this result shows that the PIP antifuse is a very stable and programmable logic device.

• Nuclear Engineering and Technology
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• 제51권2호
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• pp.510-517
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• 2019

Increasing proliferation resistance of plutonium by way of increased $^{238}Pu$ content is of interest to the nuclear nonproliferation and international safeguards community. Considering the high alpha decay heat of $^{238}Pu$, increasing the isotopic fraction leads to a noticeably higher amount of heat generation within the plutonium. High heat generation is especially unattractive in the scenario of weaponization. Upon weaponization of the plutonium, the plutonium may generate enough heat to elevate the temperature in the high explosives to above its self-explosion temperature, rendering the weapon useless. In addition, elevated temperatures will cause thermal expansion in the components of a nuclear explosive device that may produce thermal stresses high enough to produce failure in the materials, reducing the effectiveness of the weapon. Understanding the technical limit of $^{238}Pu$ required to reduce the possibility of weaponization is key to reducing the current limit on safeguarded plutonium (greater than 80 at. % $^{238}Pu$). The plutonium vector evaluated in this study was found by simulating public information on Lightbridge's fuel design for pressurized water reactors. This study explores the temperature profile and maximum stress within a simple (first generation design) hypothetical nuclear explosive device of four unique scenarios over time. Analyzing the transient development of both the temperature profile and maximum stress not only establishes a technical limit on the $^{238}Pu$ content, but also establishes a time limit for which each scenario would be useable.

• 정보저장시스템학회논문집
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• 제10권2호
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• pp.32-38
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• 2014

Heat emission from the laser diode used in the optical disc drive and the defects from the increased temperature at the system have attracted attentions from the field of the information storage device. Thermoelectric refrigerator is one of the fine solutions to solve these thermal problems. The refrigeration performance of thermoelectric device is dependent on the thermoelectric material's figure-of-merit. Meanwhile, high electrical contact resistivity between metal electrode and p- and n-type thermoelectric materials in the device would lead increased total electrical resistance resulting in the degeneracy in performance. This paper represents the manufacturing process of the PbTe-based material which has one of the highest figure-of-merit at medium-high-temperature, ~ 600K to 900 K, and the nickel contact layer for reduced electrical contact resistance at once, and the results showing the decent contact structure and figure-of-merit even after the long-term operation environment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.192-196
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• 2002

This paper describes on the fabrication and characteristics of a metal thin-film pressure sensor based on Cr strain-gauges for harsh environment applications. The Cr thin-film strain-gauges are sputter-deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single-crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Cr thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21 $mV/V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• 한국전기전자재료학회논문지
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• 제14권4호
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• pp.274-280
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• 2001

This paper presents transconductance (g$\_$m/( characteristics of GaAs MESFET's at high temperatures ranging from room temperature to 350$\^{C}$. GaAs MESFET of 0.3x750[㎛] gate dimension has been used to obtain the experimental data. Gate to source voltage(V$\_$GS/) has been controlled to obtain the temperature dependent characteristics for maximum transconductance g$\_$mmax/ of the device. Furthermore g$\_$mmax/ and expected g$\_$m/ have been traced with temperatures ranging from room temperature to 350$\^{C}$ also by compensating for C$\_$GS/ to maintain the optimum operation of the device. From the results, V$\_$GS/decreases as the operating temperature increases for optimum operation of the transconductance. Finally V$\_$GS/ has been optimized to trace g$\_$mmax/ and enhances the decreased g$\_$m/ with different temperatures.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.59-63
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• 2002

This paper reports on the fabrication process and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited on a thermally oxidized micromachined Si diaphragms with buried cavities for overpressure tolerance. The proposed device takes advantage of the good mechanical properties of single-crystalline Si as a diaphragm fabricated by SDB and electrochemical etch-stop technology, and in order to extend the temperature range, it has relatively higher resistance, stability and gauge factor of Ta-N thin-films more than other gauges. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.21 ~ 1.097 mV/V.kgf/$\textrm{cm}^2$ in temperature ranges of 25~ $200^{\circ}C$ and a maximum non-linearity is 0.43 %FS.