• Mycobiology
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• v.38 no.3
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• pp.210-214
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• 2010

Selection of fungal strains with high virulence against the developmental stages of Bemisia tabaci was performed using internal transcribed spacer regions. The growth rate of hyphae was measured and bioassay of each developmental stage of B. tabaci was conducted for seven days. All of the fungal strains tested were identified as Lecanicillium spp., with strain 4078 showing the fastest mycelium growth rate (colony diameter, 16.3 $\pm$ 0.9 mm) among the strains. Compared to strain 4075, which showed the slowest growth rate, the growth rate of strain 4078 was increased almost 2-fold after seven days. Strains 4078 and Btab01 were most virulent against the egg and larva stages, respectively. The virulence of fungal strains against the adult stage was high, except for strains 41185 and 3387. Based on the growth rate of mycelium and level of virulence, strains 4078 and Btab01 were selected as the best fungal strains for application to B. tabaci, regardless of developmental stage.

• East Asian Economic Review
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• v.23 no.1
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• pp.3-26
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• 2019

This study investigates the effect of high-skilled inventor emigration rate on growth rate of the country of origin (COO). Inventor emigrants represent the human capital that can generate highly innovative work. The social network they form spurs knowledge diffusion and technology transfer back to their COOs, which in turn affects innovation and growth in their home countries. We run dynamic panel estimation for 154 countries during 1990-2011, and empirically show that a positive and statistically significant effect exists for the interaction of inventor emigration and trade. The result indicates that the direct negative impact of the brain drain can be mitigated by the positive feedback effect generated by the high-skilled inventor emigrants abroad. When coupled with an active trade policy that reinforces growth, countries can partially recoup the direct effect of the human capital loss. We stress the importance of international trade for successful technology transfer to occur, and offer insights for policies that can utilize the benefits of the rich social network of their high-skilled emigrants.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.66.1-66.1
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• 2010

Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.344-349
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• 2006

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.

• Journal of The Korean Society of Grassland and Forage Science
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• v.13 no.3
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• pp.190-194
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• 1993

This experiment was conducted to investigate the effects of concentrated sulfate on the germination rate, growth rate and the productivity of weight of kudzu (Pueraria thwnbergiana Bentham). The germination rate of kudzu seed by one or two treatment retreatment with the concentrated sulfate for minutes of 5. 10, 15 and 20 were determined respectively. The results obtained were summarized as follows; 1. In the time of concentrated sulfate treatment, the germination rate was the highest in the once treatment for 20 minute. and the retreatment was higher than the once treatment in the germination rate. 2. The changes of plant length by growth stage was grown gradually until for 60 day and rapidly after for 60 day. The growth rate was the highest in treatment for 15 minute than in other treatments. 3. The stem diameter. stem weight. fresh weight and root weight by the treatment with sulfate 15 minute as the treatment with once were high degree of productivity. 4. The number of branch. number of nodes and root weight by the growth stage were higher growth rate before for 90 day than after for 90 day, however stem weight and fresh weight were high degree of productivity after for 60 day.

• Journal of Pharmaceutical Investigation
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• v.28 no.3
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• pp.151-158
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• 1998

The inhibition rate of bacteria growth per molecular weight was higher according as the molecular weight increased, the rate was the highest at the molecular weight 200,000. Microcapsule of ionized calcium was able to be produced by molecular weight 15,000, 30,000, 50,000 and 200,000 of chitosan which was dried for 48 hours after melting it in 2% of acetic acid, adding ionized calcium and controlling pH 1.2. The size of ionized calcium microcapsule was between 200 and $300\;{\mu}m$, the solvency, concentration and the content showed big difference by the molecular weight of chitosan. The inhibition rate of bacteria growth of microcapsule designated high in Gram positive, which was high in S. aureus, S. epidermidis and Bacillus subtilis, low in S. mutans, high in C. albicans in fungi, low in A. niger. The inhibition rate of bacteria growth of chitosan was comparatively high in Gram positive, low in S. mutans and it showed high numerical value in C. albicans of fungi. The rate recorded good result at molecular weight 200,000 relatively, there was no difference according to the molecular weight. The inhibition rate of bacteria growth according to the concentration of the microcapsule increased differently between $1.000{\sim}10,000\;{\mu}g/ml$, it showed antibacterial activity close to the inhibition rate of growth of chitosan rather than ionized calcium. The minimum inhibitory concentration marked the highest in the mixture of chitosan and ionized calcium for all kind of bacteria generally, there was a little difference between yeast and fungi.

• KSBB Journal
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• v.10 no.4
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• pp.455-460
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• 1995

Specific growth rate was controlled for the repression of acetic acid formation in the fed-batch fermentation of recombinant Escherichia coli. With controlled specific growth rate, we studied the effect of the specific growth rate on cell growth, glucose consumption, acetic acid formation, and the expression of recombinant protein (${\beta}$-lactamase). High specific growth rate caused the accumulation of glucose and acetic acid, and lowered the production of recombinant protein. However, the addition of methionine recovered the gene expression by alleviating the negative effect of acetic acid at high specific growth rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.66-69
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• 2001

Effect of $N_2$ flow rate on properties of GaN thin films grown by plasma-enhanced molecular beam epitaxy(PEMBE) was discussed to optimize the quality of thin films. It was found that at low $N_2$ flow rate indicating high III/V flux ratio, the growth rate of GaN thin films was controlled by $N_2$ flux, and at high $N_2$ flow rate the growth rate was not controlled by $N_2$ flux any longer. It was also found that III/V flux ratio affected film quality. The film grown at higher $N_2$ flow rate showed low background carrier concentration, higher carrier mobility, and narrow FWHM in band-edge emission of low temperature PL. It is thought that the film in more Ga flux region was grown by 2-dimensional layer-by-layer growth mode, and the film in more nitrogen region was grown by 3-D island growth mode. All samples exhibited a good crystallinity.

• Journal of Practical Agriculture & Fisheries Research
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• v.19 no.1
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• pp.129-137
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• 2017

This study was conducted to investigate of growth performances and net assimilation rate(NAR) of Allium microdictyon Prokh. distributed inland and Allium ochotense Prokh. originated Ulleung-do. The Allium microdictyon on the growth of 1-2 years showed the largest relative growth rate, and showed high relative growth from three to four years. Allium ochotense on the growth from one year to three years showed high relative growth rate. The T/R rate of Allium ochotense of 2~5years was in the range of 0.4~0.5. However, The T/R rate of Allium microdictyon was increased as increasing with age. This implies that Allium microdictyon was consumed more energy on growing subterranean part. The LWR of 1~3years old Allium ochotense. was showed more smaller than 4~5years old. It seems that the growth characteristics of Allium ochotense 1-3 years after sowing the leaf growth consume more energy than Allium microdictyon. Net assimilation rate(NAR) of Allium ochotense for 1-3 years after sowing was higher than that of Allium microdictyon. In this time, the material of Allium ochotense has a higher production efficiency can be seen indirectly.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.2 s.233
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• pp.169-179
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• 2005

Nucleate boiling experiments on heating surface of constant wall temperature were performed using R113 for almost saturated pool boiling conditions. A microscale heater array and Wheatstone bridge circuits were used to maintain a constant wall temperature condition of heating surface and to measure the heat flow rate with high temporal and spatial resolutions. Bubble images during the bubble growth were taken as 5000 frames per second using a high-speed CCD camera synchronized with the heat flow rate measurements. The bubble growth behavior was analyzed using the new dimensionless parameters for each growth regions to permit comparisons with previous experimental results at the same scale. We found that the new dimensionless parameters can describe the whole growth region as initial and later (thermal) respectively. The comparisons showed good agreement in the initial and thermal growth regions. In the initial growth region including surface tension controlled, transition and inertia controlled regions as divided by Robinson and Judd, the bubble growth rate showed that the bubble radius was proportional to $t^{2/3}$ regardless of working fluids and heating conditions. And in the thermal growth region as also called asymptotic region, the bubble showed a growth rate that was proportional to $t^{1/5}$, also. Those growth rates were slower than the growth rates proposed in previous analytical analyses. The required heat flow rate for the volume change of the observed bubble was estimated to be larger than the heat flow rate measured at the wall. Heat, which is different from the instantaneous heat supplied through the heating wall, can be estimated as being transferred through the interface between bubble and liquid even with saturated pool condition. This phenomenon under a saturated pool condition needs to be analyzed and the data from this study can supply the good experimental data with the precise boundary condition (constant wall temperature).