• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.40-46
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• 2006

Latching optical switches and optical logic gates AND and OR are demonstrated, for the first time, by the monolithic integration of a vertical cavity lasers with depleted optical thyristor structure, which have not only a low threshold current with 0.65mA, but also a high on/off contrast ratio more than 50dB. By simple operating technique with changing a reference switching voltage, this single device operates as two logic functions, optical logic AND and OR. The thyristor laser fabricated using the oxidation process achieved a high optical output power efficiency and a high sensitivity to the optical input light.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.3 s.357
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• pp.92-97
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• 2007

Switching mode amplifiers have been studied widely for use at microwave frequency range, and the class E amplifier which is a type of switching mode amplifier offers very high efficiency approaching 100%. In this paper, 2.4GHz microwave class E amplifier with 66% power added efficiency (PAE) and 17.6dBm output has been linearized for use at wireless LAN transmitter, and digital predistortion technique with look up table is applied. With -3dBm input power of wireless LAN, measured output spectrum can meet the required IEEE 802.11g standard spectrum mask, and the digital predistortion output spectrum has been improved by 5dB of ACPR at 20MHz offset from center frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.683-693
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• 2011

In this paper, a design of high current and broad-band microwave bias-tee was presented for a stable bias of a high power amplifier. An input impedance of bias-tee should be shown to 50 ohm with the wideband in order to be stably-biased the amplifier. For this design of the bias-tee, a capacitor of bias-tee for a DC block was designed with a high wide-band admittance by a parallel sum of capacitors, and a inductor for a RF choke and a DC feeding was designed with a high wide-band impedance by a series sum of inductors. As this inductor and capacitor for the sum has each SRF, band-limitation of lumped element was driven from SRF. This limitation was overcome by control of a resonance's quality factor with adding a resistor. 1608 SMD chips for design's element was mounted on the this pattern for the designed bias-tee. The fabricated bias-tee presented 10 dB of return loss and wide-band about 50 ohm input impedance at 10 MHz~10 GHz.

• Progress in Superconductivity and Cryogenics
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• v.19 no.4
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• pp.18-21
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• 2017

We report a method for improving heat exchange between cryo-cooled large-power-dissipation devices and liquid cryogen. Micro-machined monolithic heat sinks were fabricated on a high integration density superconducting Josephson device, and studied for their effect on cooling the device. The monolithic heat sink showed a significant enhancement of cooling capability, which markedly improved the device operation under large dc- and microwave power dissipation. The detailed mechanism of the enhancement still needs further modeling and experiments in order to optimize the design of the heat sink.

• Journal of electromagnetic engineering and science
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• v.5 no.2
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• pp.92-96
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• 2005

This paper presents a novel microwave oscillator incorporating a simple microstrip ring type resonant cell as its terminating resonance component. Reduced chip size, higher dc-ac power efficiency, superior harmonic characteristics can be achieved from the introduction of a compact microstrip ring resonator cell. The oscillator provides a second harmonic suppression of 26.51 dB and the output power of 2.046 dBm at 2.11 GHz.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.177-180
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• 1999

A two-stage monolithic microwave integrated circuits (MMIC) broad-band power amplifier with AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been developed for the up-link and down-link applications for local multipoint distribution systems (LMDS) in the frequency range of 24~28㎓. The amplifier has a small signal gain of 18.6㏈ at 24.5㎓ and 16.7㏈ at 27.1㎓. It achieved output powers of 19.8㏈m with PAE of 19.8% at 24.5㎓ and 18.8㏈m at 27.1㎓.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.1
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• pp.14-19
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• 2001

When the high power transistor is used for amplifier in microwave frequency, the bias of transistor is usually AB-class or B-c1ass because of power efficiency. The sweet spot point having small IMD signal compared with near neighborhood exicts frequently in the high power transistor using AB class bias or B-class bias. On the sweet spot, the magnitude and phase of the main and IMD signal of HPA output change as the input signal power change, respective the relative phase on the sweet spot changes rapidly. If we know exactly the magnitude and phase characteristics of IMD signal, we can design a more adequate linearizer and understand the characteristics of transistor. In this paper the magnitude and phase of the main and IMD signal of HPA output on the sweet spot are measured using the designed hardware.

• Journal of electromagnetic engineering and science
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• v.17 no.4
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• pp.178-180
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• 2017

This study presents a 2-20 GHz monolithic distributed power amplifier (DPA) using a $0.25{\mu}m$ AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a non-uniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC) are 35.3-38.6 dBm and 11.4%-31%, respectively, for 2-20 GHz.

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.256-258
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• 2010

MPM(Microwave Power Module)은 진공 전력증폭기인 진행파관(TWT,Traveling Wave Tube)과 반도체 전력증폭기(SSA, Solid State Amplifier)를 결합한 구조로서, 미세한 RF신호를 입력 받아 고출력의 RF 신호로 증폭하는 장치이다. 본 논문은 MPM을 구동하기 위해, 필요한 수 kV이상의 높은 전압을 TWT에 공급해주는 고전압 전원공급기(HVPS, High Voltage Power Supply)에 관한 것이다. Main Topology는 Resonant Phase Shift Full Bridge Converter이며, 승압의 효과를 높이기 위해 2차 측에는 Voltage Multiplier를 사용하였다. MPM을 구동하는데 필요한 전압인Cathode(-4kV), FE_Bias(-5.25kV), Collector(-2kV)를 생성하며, FE_ON, OFF신호에 따라 고전압 스위칭 동작을 하여, RF 증폭을 제어 할 수 있다. 최종적으로 Prototype을 제작하고, 고찰된 실험결과를 제시하여 개발된 HVPS의 우수성을 검증한다.

• Korean Journal of Veterinary Research
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• v.43 no.3
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• pp.393-398
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• 2003

Simple and rapid sample preparation method for trace elements in foods of animal origin using ultra high pressure microwave digestion system (UHP/MDS) and inductively coupled plasma atomic emission spectrometer (ICP/AES) were developed. 1. For the digestion of sample using UHP-MDS, 20% nitric acid (v/v) was the most suitable solvent for the determination of trace elements in foods of animal origin. 2. The optimal digestion conditions for UHP-MDS were as follows: final temperature $180^{\circ}C$, final pressure 400 PSI, and magnetic power 900 W in the solid sample. For the liquid sample final temperature $170^{\circ}C$, final pressure 300 PSI and magnetic power 700 W were optimal conditions. 3. As result of interlaboratory test, the average recovery rate of the for solid sample were 88.3~99.1% for As, 82.4~93.3% for Cd, 89.2~101.2% for Hg and 86.5~93.8% for Pb, respectively. In liquid sample, it were 87.0~96.8% for As, 80.9~96.6% for Cd, 87.5~91.2% for Hg and 91.4~95.5% for Pb, respectively. 4. The average coefficient variation rate were 3.3~15.9% for solid sample and 2.9~10.8% for liquid sample.