• Title/Summary/Keyword: High-isolation

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Isolation Technologies for Single-crystalline Silicon MEMS Structures Using Trench Oxide (트렌치 산화막을 이용한 단결정실리콘 MEMS 구조물의 절연기술에 관한 연구)

  • Lee, Sang-Chul;Kim, Im-Jung;Kim, Jong-Pal;Park, Sang-Jun;Yi, Sang-Woo;Cho, Dong-Il
    • Journal of Sensor Science and Technology
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    • v.9 no.4
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    • pp.297-306
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    • 2000
  • To improve the performance of MEMS devices, fabricating single-crystalline silicon HARS (high aspect ratio structure) with thicknesses of up to several tens of micrometers has been an active research topic in recent years. However, achieving electrical isolation, which is required for actuating a structure or sensing an electrical signal, has been one of the main problems in single-crystalline silicon HARS fabrication technologies. In this paper, new isolation technologies using high aspect ratio oxide beams and sidewalls are developed to achieve electrical isolation between electrodes of single-crystalline silicon HARS. The developed isolation technologies use insulating oxide structural supports from either the structural sides or from the bottom. In this case because the trench oxide supports have a depth of several tens of ${\mu}m$, the effects of residual stress must be considered. In this paper, insulating supports are fabricated using PECVD TEOS films, the residual stress of the insulating supports is measured, and the effect of the residual stress on the structure is analyzed. It is shown using microresonators, that the developed isolation technologies can be effectively used for HARS using single-crystalline silicon.

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Temperature Characteristics of SDB SOI Hall Sensors (SDB SOI 흘 센서의 온도 특성)

  • 정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.05a
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    • pp.227-229
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    • 1995
  • Using thermal oxide SiO$_2$ as a dielectrical isolation layer, SOI Hall sensors without pn junction isolation have been fabricated on Si/SiO$_2$/Si structures. The SOI structure was formed by SDB (Si- wafer direct bonding) technology. The Hall voltage and the sensitivity of Si Hall devices implemented on the SDB SOI structure show good linearity with respect to the appled magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average 600V/V.T. In the trmperature range of 25 to 300$^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the Product Sensitivity) are less than ${\pm}$ 6.7x10$\^$-3/ C and ${\pm}$8.2x10$\^$04/$^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of Hall sensors with a high-sensitivity and high-temperature operation.

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Polarization-Independent Multiwavelength-Switchable Filter Based on Polarization Beam Splitter and Fiber Coupler

  • Lee, Yong-Wook
    • Journal of Electrical Engineering and Technology
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    • v.4 no.3
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    • pp.405-409
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    • 2009
  • A polarization-independent multiwavelength-switchable fiber filter is proposed based on a polarization beam splitter and fiber coupler, which can function as a polarization-independent transmission or reflection-type interleaving filter. The proposed filter consists of a polarization beam splitter and a Sagnac birefringence loop composed of a 50:50 coupler, high birefringent fibers, and two quarter-wave plates. In the proposed filter, a transmission-type interleaver with a channel isolation > 18 dB or a reflection-type one with a channel isolation of ${\sim}3$ dB, whose channel spacing and switching displacement were 0.8 and 0.4 nm in common, respectively, could be obtained. A channel interleaving operation could be performed by the proper control of waveplates within the Sagnac birefringence loop.

Purification and Characterization of Homoharringtonine from Cephalotaxus koreana

  • Kim, Byung-Sik;Kim, Jin-Hyun
    • 한국생물공학회:학술대회논문집
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    • 2005.04a
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    • pp.351-354
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    • 2005
  • A new isolation and purification method was developed aiming at increasing yield and purity for homoharringtonine. This method was a simple andefficient procedures, for the isolation and purification of homoharringtonine from Cephalotaxus koreana, consisting of solvent extraction, adsorbent treatment, low-pressure chromatography, and high performance liquid chromatography (HPLC). The crude homoharringtonine was efficiently pre-purified adequately to perform HPLC through a combination withadsorbent treatment and low-pressure chromatogaphy. The homoharringtonine can be simply obtained with high purity and yield from crude homoharringtonine by HPLC. Purified homoharringtonine was characterized.

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Isolation and Identification of Dextranase Production Strains and Enzyme Production (Dextranase 생산균주의 분리, 동정 및 효소생산)

  • Lee, Jong-Tae;Yi, Dong-Heui;Kwak, Yi-Seong;Kim, Young-Ho;Sung, Hyun-Soon;Kim, Chan-Jo
    • Microbiology and Biotechnology Letters
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    • v.23 no.4
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    • pp.405-410
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    • 1995
  • In order to screen dextranase with high dextranolytic activity from microbial origins, dextranase producing fungal isolates were isolated from soil of the Taeion area. 197 strains with dextranolytic activities were isolated, out of which 3 strains with high dextranolytic activities were selected in the first screening. A strain (GR-98) with a best dextranolytic activity was selected in the second screening. The strain was identified to be similiar Aspergillus ustus by the morphological and cultural characteristics. The optimum culture temperature and initial pH for the dextranase production of the strain was 30$\circ$C and 7.0, respectively. The optimum culture medium was composed of 2% dextran, 0.3% KNO$_{3}$, 0.05% K$_{2}$HPO$_{4}$, 0.02% MgSO$_{4}$-7H$_{2}$O, 0.05% KC1, and 2.5 $\mu$g/ml pyridoxamine, and the enzyme production was maximum when the strain was subcultured at 30$\circ$C for 7 days.

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Establishment of Gun Head Unit for Electron Beam Machining System (전자빔건 헤드유니트의 설계와 제작)

  • Kang J.H.;Lee C.H.;Choi J.H.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.06a
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    • pp.1875-1878
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    • 2005
  • It is not efficient and scarcely out of the question to use commercial expensive electron beam lithography system widely used for semiconductor fabrication process for the manufacturing application field of various devices in the small business scope. Then scanning electron microscope based electron beam machining system is maybe regarded as a powerful model can be used for it simply. To get a complete suite of thus proper system, column unit build up with electron beam gun head unit is necessarily required more than anything else to modify scanning electron microscope. In this study, various components included ceramic isolation plate and main body which are essentially constructed for electron beam gun head unit are designed and manufactured. And this electron beam gun head unit will be used for next connected study in the development step of scanning electron microscope based electron beam machining system.

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Isolation and morphological characterization of natural killer cell in the sprague-dawley(SD) rats (Sprague-dawley(SD) 랫드에서 natural killer cell의 분리 ·동정 및 형태적 특징)

  • Kang, Kyung-sun;Lee, Yong-soon
    • Korean Journal of Veterinary Research
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    • v.32 no.2
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    • pp.245-250
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    • 1992
  • This study was performed to demonstrate the presence of large granular lymphocyte(LGL) in Sprague-Dawley(SD) rats and morphologically observe NK cell and also establish the method of isolation of natural killer cell in SD rats. By percoll discontinuous density gradients centrifugation, highly enriched LGL population were shown to fraction 2(border line between 44.2% and 50.8%). LGL were shown to bind selectively to YAC1 mouse lymphoma cell. This fraction expressed very high NK cell cytolysis. Therefore, we thought that LGL have NK activity in SD rats. The Morphology of rat LGL is very similar to that of human LGL. These cells have an eccentric kidney-shaped nucleus. Their most distinctive feature was their cytoplasmic azurophilic granules. Another distinguishing feature of rat LGL was their high cytoplasmic : nuclear ratio. It was concluded that LGL played a role part in mediating natural killer activity in this species.

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Analysis, Design, Modeling, Simulation and Development of Single-Switch AC-DC Converters for Power Factor and Efficiency Improvement

  • Singh, Bhim;Chaturvedi, Ganesh Dutt
    • Journal of Power Electronics
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    • v.8 no.1
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    • pp.51-59
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    • 2008
  • This paper addresses several issues concerning the analysis, design, modeling, simulation and development of single-phase, single-switch, power factor corrected AC-DC high frequency switching converter topologies with transformer isolation. A detailed analysis and design is presented for single-switch topologies, namely forward buck, flyback, Cuk, Sepic and Zeta buck-boost converters, with high frequency isolation for discontinuous conduction modes (DCM) of operation. With an awareness of modem design trends towards improved performance, these switching converters are designed for low power rating and low output voltage, typically 20.25W with 13.5V in DCM operation. Laboratory prototypes of the proposed single-switch converters in DCM operation are developed and test results are presented to validate the proposed design and developed model of the system.

Isolation and Identification of Aldehyde Producing Methanol Utilizing Yeast (메탄올 자화성 효모의 분리, 동정 및 Aldehyde 생산)

  • 윤병대;김희식;권태종;양지원;권기석;이현선;안종석;민태익
    • Microbiology and Biotechnology Letters
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    • v.20 no.6
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    • pp.630-636
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    • 1992
  • Hansenula nonfermentans KYP-l was selected and identified from 19 methanol utilizing yeasts isolated from soil samples by the enrichment culture technique. This strain showed a high cell concentration and a high aldehyde production. Aldehyde production was carried out in a resting cell system using methanol utilizing yeast as a biocatalyst. The molar yield of acetaldehyde was the highest among the aldehyde investigated, and the maximum amount of aldehyde was produced by cells obtained from a 40 hours' culture.

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Anomalous Subthreshold Characteristics for Charge Trapping NVSM at memory states. (기억상태에 있는 전하트랩형 비휘발성 반도체 기억소자의 하위문턱이상전류특성)

  • 김병철;김주연;서광열;이상배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.13-16
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    • 1998
  • An anomalous current characteristics which show the superposition of a low current level and high current level at the subthreshold region when SONOSFETs are in memory states were investigated. We have assumed this phenomena were resulted from the effect of parasitic transistors by LOCOS isolation and were modeled to a parallel equivalent circuit of one memory transistor and two parasitic transistors. Theoretical curves are well fitted in measured log I$_{D}$-V$_{G}$ curves independent of channel width of memory devices. The difference between low current level and high current level is apparently decreased with decrease of channel width of devices because parasitic devices dominantly contribute to the current conduction with decrease of channel width of memory devices. As a result, we concluded that the LOCOS isolation has to selectively adopt in the design of process for charge-trap type NVSM.VSM.

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