• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.762-767
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• 2017

Mullite ($3Al_2O_3{\cdot}2SiO_2$) has emerged as a promising candidate for high-temperature structural materials due to its erosion resistance, chemical and thermal stabilities, relatively low thermal expansion coefficient, excellent thermal shock and creep resistances, and low dielectric constant. However, since the pure mullite sintering temperature is as high as $1,600{\sim}1,700^{\circ}C$, there is an increasing need for a sintering additive capable of improving the strength characteristics while lowering the sintering temperature. Herein we have tried to obtain the optimal sintering additive composition by adding MgO, $Cr_2O_3$, and $Y_2O_3$ to mullite, followed by sintering at $1,325{\sim}1,550^{\circ}C$ for 2 h. With additives of 2 wt% of MgO, 2 wt% of $Cr_2O_3$, 4 wt% of $Y_2O_3$, A density of $3.23g/cm^3$ was obtained for the sintered body at $1,350^{\circ}C$ upon using 2 wt% MgO, 2 wt% $Cr_2O_3$, and 4 wt% $Y_2O_3$ as additives. The three-point flexural strength of that was 275 MPa and the coefficient of thermal expansion (CTE) was $4.15ppm/^{\circ}C$.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.502-508
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• 2020

This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V₂O₅-MnO₂-Nb₂O₅-Bi₂O₃-Co₃O₄-Dy₂O₃ (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/㎤ due to the volatility of V₂O₅, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 ℃ exhibit a relatively low leakage current, less than 60 mA/㎠. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in 𝚫E_B/E_B and -0.7 % in 𝚫α/α after application of DC accelerated aging stress (0.85 E_B/85 ℃/24 h).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.816-820
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• 2013

We investigated the characteristics of the silicon oxy-nitride and nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) at the low temperature with a varying $NH_3/N_2O$ mixing ratio and a fixed $SiH_4$ flow rate. The deposition temperature was held at $150^{\circ}C$ which was the temperature compatible with the plastic substrate. The composition and bonding structure of the nitride films were investigated using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Nitrogen richness was confirmed with increasing optical band gap and increasing dielectric constant with the higher $NH_3$ fraction. The leakage current density of the nitride films with a high NH3 fraction decreased from $8{\times}10^{-9}$ to $9{\times}10^{-11}(A/cm^2$ at 1.5 MV/cm). This results showed that the films had improved electrical properties and could be acceptable as a gate insulator for thin film transistors by deposited with variable $NH_3/N_2O$ mixing ratio.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.53-58
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• 2018

Since the scaling-down of IC devices has been reached to their physical limitations, several innovative packaging technologies such as 3D packaging, embedded packaging, and fan-out wafer level packaging (FOWLP) are actively studied. In this study the fabrication of organic-inorganic dielectric material was evaluated for the use of multi-structured redistribution layers (RDL) in FOWLP. Compared to current organic dielectrics such as PI or PBO an organic-inorganic hybrid dielectric called polysilsesquioxane (PSSQ) can improve mechanical, thermal, and electrical stabilities. polysilsesquioxane has also an excellent advantage of simultaneous curing and patterning through UV exposure. The polysilsesquioxane samples were fabricated by spin-coating on 6-inch Si wafer followed by pre-baking and UV exposure. With the 10 minutes of UV exposure polysilsesquioxane was fully cured and showed $2{\mu}m$ line-pattern formation. And the dielectric constant of cured polysilsesquioxane dielectrics was ranged from 2.0 to 2.4. It has been demonstrated that polysilsesquioxane dielectric can be patterned and cured by UV exposure alone without a high temperature curing process.

• Journal of Biosystems Engineering
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• v.25 no.2
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• pp.97-106
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• 2000

To develop the grain moisture meter using microwave free space transmission technique, a 10.5GHz microwave signal with the power of 11mW generated by an oscillar with a dielectric resonator is transmitted to an isolator and radiated from a transmitting $2{\times}2$ microstrip patch array antenna into the sample holder filled with the 12 to 26%w.b. of Korean Hwawung paddy rice. the microwave signal, attenuated through the grain with moisture, is collected by a receiving $2{\times}2$ microstrip patch array antenna and detected using a Shottky diode with excellent high frequency characteristic. A pair of light and simple microstrip patch array antenna for measurement of grain moisture content is designed and implemented on atenflon substrate with trleative dielectric constant of 2.6 and thickness of 0.54 by using Ensemble ver. 4.02 software. The aperture of microstrip patch arrays is 41 mm width and 24mm high. The characteristics of microstrip patch antenna such as grain. return loss, and bandwidth are 11.35dBi, -38dB and 0.35GHz($50^{\circ}$ at far-field pattern of E and H plane. The width of the sample holder is large enough to cover the signal between the antennas temperature and bulk density respectively. The calibration model for measurement of grain moisture content is proposed to reduce the effects of fluectuations in bulk density and temperature which give serious errors for the measurements . From the results of regression analysis using the statistically analysis method, the moisture content of grain samples (MC(%)) is expressed in terms of the output voltage(v), temperature (t), and bulk density of samples(${\rho}b$)as follows ;$$MC(%)\;=\;(-3.9838{\times}10^{-8}{\times}v^{3}+8.023{\times}10^{-6}{\times}v^{2}-0.0011{\times}v-0.0004{\times}t+0.1706){\frac{1}{{\rho}b}}{\times}100$ Its determination coefficient, standard error of prediction(SEP) and bias were found to be 0.9855, 0.479%w.b. and -0.0.369 %w.b. respectively between measured and predicted moisture contents of the grain samples.

• Korean Journal of Materials Research
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• v.24 no.5
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• pp.259-265
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• 2014

$ZrO_2$ films were coated on aluminum etching foil by the sol-gel method to apply $ZrO_2$ as a dielectric material in an aluminum(Al) electrolytic capacitor. $ZrO_2$ films annealed above $450^{\circ}C$ appeared to have a tetragonal structure. The withdrawal speed during dip-coating, and the annealing temperature, influenced crack-growth in the films. The $ZrO_2$ films annealed at $500^{\circ}C$ exhibited a dielectric constant of 33 at 1 kHz. Also, uniform $ZrO_2$ tunnels formed in Al etch-pits $1{\mu}m$ in diameter. However, $ZrO_2$ film of 100-200 nm thickness showed the withstanding voltage of 15 V, which was unsuitable for a high-voltage capacitor. In order to improve the withstanding voltage, $ZrO_2$-coated Al etching foils were anodized at 300 V. After being anodized, the $Al_2O_3$ film grew in the directions of both the Al-metal matrix and the $ZrO_2$ film, and the $ZrO_2$-coated Al foil showed a withstanding voltage of 300 V. However, the capacitance of the $ZrO_2$-coated Al foil exhibited only a small increase because the thickness of the $Al_2O_3$ film was 4-5 times thicker than that of $ZrO_2$ film.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.586-591
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• 2019

This study describes the doping effect of $Yb_2O_3$ on microstructure, electrical and dielectric properties of $ZnO-V_2O_5-MnO_2-Nb_2O_5$ (ZVMN) ceramic semiconductors sintered at a temperature as low as $900^{\circ}C$. As the doping content of $Yb_2O_3$ increases, the ceramic density slightly increases from 5.50 to $5.54g/cm^3$; also, the average ZnO grain size is in the range of $5.3-5.6{\mu}m$. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of $Yb_2O_3$ is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% $Yb_2O_3$ reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of $2.46-7.41{\times}10^{17}cm^{-3}$ with increasing doping content of $Yb_2O_3$ and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of $Yb_2O_3$ reaches 0.1 mol%, whereas further doping increases it. The value of $tan{\delta}$ increases from 0.209 to 0.268 with the doping content of $Yb_2O_3$.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.141-147
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• 2010

In this study, high-k oxide films like $Al_2O_3$, $TiO_2$, $HfO_2$ were deposited on Si, $SiO_2$/Si, GaAs wafers, and then the thermal conductivity was measured by using thermo-reflectance method which utilizes the reflectance variation of the film surface produced by the periodic temperature variation. The result shows that high-k oxide films with 50 nm thickness have high thermal conductivity of 0.80~1.29 W/(mK). Therefore, effectively dissipate the heat generated in the electric circuit such as CMOS memory device, and the heat transfer changes according to the micro grain size.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.316-327
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• 1997

Polycrystalline $Sr_{2}Nb_{2}O_{7}$ and $La_{2}Ti_{2}O_{7}$ ceramics with very high Curie temperatures were synthesized by the chemical coprecipitation method (CCP). The powders synthesized were identified by XRD and their sintering behavior and physical properties were studied. The grain-orientation and electrical properties of sintered ceramics were investigated as a function of firing temperature. Single phase could be obtained by CCP method at temperature lower than that of the conventional method by 100 - $150^{\circ}C$. Strontium niobate, $Sr_{2}Nb_{2}O_{7}$, powder was Prepared by CCP method at temperatures as low as $800^{\circ}C$ via intermediate phase of $Sr_{5}Nb_{4}O_{15}$ formed at $700^{\circ}C$. The resulting CCP-derived powder was observed to have finer and more uniform particle size distribution than those obtained through the conventional or the molten salt synthesis method. Sintering of CCP-derived $Sr_{2}Nb_{2}O_{7}$ powder at $1500^{\circ}C$ yielded a highly dense ceramics with 97% theoretical density. Very high grain-orientation developed along the (0k0) direction was observed by SEM, which resulted in anisotropic dielectric properties of the sintered samples, with the dielectric constant values approaching those for single crystal.