• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.20.2-20.2
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• 2011

BMNO dielectric materials with a pyrochlore structure have been chosen and they have quite high dielectric constants about 210 for the bulk material. In the case of thin films, 200-nm-thick BMNO films deposited at room temperature showed a low leakage current density of about $10^{-8}\;A/cm^2$ at 3 V and a dielectric constant of about 45 at 100 kHz. Because high dielectric constant BMNO thin films kept an amorphous phase at a high temperature above $900^{\circ}C$. High dielectric constant BMNO thin films grown at room temperature have many applications for flexible electronic devices. However, because the dielectric constant of the BMNO films deposited at room temperature is still low, percolative BMNO films (i.e., those were grown in a pure argon atmosphere) sandwiched between ultra-thin BMNO films grown in an oxygen and argon mixture have greater dielectric constants than standard BMNO films. However, they still showed a leakage problem at a high voltage application. Accordingly, a new nano-structure that uses BMNO was required to construct the films with a dielectric constant higher than that of its bulk material. The fundamental reason that the BMNO-Bi nano-composite films grown by RF-Sputtering deposition had a dielectric constant higher than that of the bulk material was addressed in the present study. Also we used the graphene as bottom electrode instead of the Cu bottom electrode. At first, we got the high leakage current density value relatively. but through this experiment, we could get improved leakage current density value.

• Journal of the Korea Institute of Military Science and Technology
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• v.10 no.3
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• pp.114-119
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• 2007

Dielectric properties of quartz glass and $Si_3N_4$ are investigated using the waveguide method from room temperature to $800^{\circ}C$. For the case of dielectric constant, $Si_3N_4$ showed similar increase with quartz glass up to $300^{\circ}C$, but less increase from $300^{\circ}C$ to $800^{\circ}C$. For the case of loss tangent, those showed gradual increase with temperature except of some temperature points. The loss tangent of $Si_3N_4$ and quartz glass increased up to 18.2% and 12.5% respectively. Through these researches, high temperature dielectric properties of silicon nitride materials are characterized.

• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.281-286
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• 1982

The composition of glasses to be suitable for crystallisation of $BaTiO_3$ by heat-treatment and the dielectric properties of the glass-ceramics were investigated. The composition of the family of glasses was defined by the formula $\chi$ $BaTiO_3 + (100-$\chi$)Al_2O_3$.$2SiO_2$ and excess BaO. Data were presented on dielectric constant and loss tangent at various frequencies. The effects of excess BaO on dielectric properties were investigated. The additions of $Na_2O$ and $Nb_2O_5$ shifted the Curite temperature of these glass-ceramics. The glass composition which was able to be melted at 145$0^{\circ}C$ and moulded as homogeneous glass phase without devitrification should contain $Al_2O_3$.$2SiO_2$ more than 30 mole %. The more the amount of additive BaO increased, the more dielectric constant increased. When the maximum heat-treatment temperature was 105$0^{\circ}C$, we obtained higher dielectric constant than that of 95$0^{\circ}C$. The dielectric constant and the dielectric loss were stable at frequencies between 5$\times$104 and 107 cycle per second. When $Na_2O$ and $Nb_2O_5$ were added, the Curie temperature, presented at 14$0^{\circ}C$ to 15$0^{\circ}C$, shifted to lower temperature. Therefore, the glass-ceramics having high dielectric constant at room temperature were obtained.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.224-227
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• 2015

Ferroelectric $Pb_2(Sc,Nb)O_6$ were prepared under two different sintering conditions using the oxide mixing method and the electrical properties were measured. The sintering conditions were $1350^{\circ}C$ for 25 minutes and $1400^{\circ}C$ for 20 minutes. EDX spectroscopy and XRD were used to determine the crystalline characteristic of the $Pb_2(Sc,Nb)O_6$ compositions Pyrochlore phase showed about 2% in all $Pb_2(Sc,Nb)O_6$ specimens. It expands the growth of crystals in samples sintered at $1400^{\circ}C$ than $1350^{\circ}C$, but all samples were the optimal crystallization. The temperature and frequency dependence of the complex dielectric constant and admittance were measured to analyze the electrical properties. The high dielectric constant of the specimens reflects the good stoichiometry and crystallization. The maximum value of the dielectric constant in the two specimens treated with sintering at $1350^{\circ}C$ and $1400^{\circ}C$ were more than 27,000, and the dielectric loss at room temperature is smaller than 0.05. The maximum dielectric constant decreased with increasing frequency, the transition temperature also increased in $Pb_2(Sc,Nb)O_6$ compositions. The admittance and susceptance values reach a peak at all temperatures, and the magnitude of the peak increases with increasing measuring temperature. Strong frequency dependent of maximum admittance, susceptance, dielectric constant and dielectric loss were observed.

• Korean Journal of Food Science and Technology
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• v.28 no.3
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• pp.470-474
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• 1996

The dielectric properties, dielectric constant (${\varepsilon}‘$) and loss factor (${\varepsilon}’$), of skin and pulp of fresh ginseng were measured from $25^{\circ}C$ to $67^{\circ}C$ using an open-ended coaxial probe technique for 915 MHz and 2450 MHz. Pulp and skin had dielectric constant of $30{\sim}64$ and loss factor between 10 and 20, each variable having a respective frequency dependence typical of materials with high water content. Although the loss factor was nearly constant, the dielectric constant increased as moisture content increased. The dielectric constant of ginseng pulp increased as temperature increased (temperature ${\leq}56^{\circ}C$), but any significant differences were not found in skin dielectric properties. Penetration depth for fresh ginseng were about 2 cm at 91.5 MHz and 1cm at 2450 MHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.1007-1013
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• 1998

In this paper, the dielectric properties of fabricated Polyvinylidene fluoride(PVDF, $PVF_2$) thin film with substrate temperature from 30 to at vapor deposition. The dielectric properties of PVDF thin film had been studied in the frequency range from 10Hz to 4MHz at measuring temperature between 20 and $100^{/circ}C$. The anomalous increasing in dielectric constant and dielectric loss at low frequencies and high temperature was described for PVDF thin film containing ion impurities. In particularly, ion mobility of fabricated PVDF thin film at substrate temperature at $30^{/circ}C$ decrease from $2\times10^{-5}\;to\;3.07$\times10^{-7}cm^2/V.s$ On the other hand, ion density increase abruptly from 1.49\times$$10^{13}$ to $1.5\times$10^{16}$cm^{-3}$ In spite of decreasing of ion mobility, dielectric constants and dielectric loss for PVDF thin film increase rapidly with decreasing frequency and high temperature. It was concluded that the dielectric constants and dielectric loss was related to ion density than to ion mobility at low frequency and high temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with repsect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, $ZnWO_4$ was turned out the suitable LTCC material. $ZnWO_4$ can be sintered up to 98% of full density at $1050^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, $B_{2}O_{3}$ and $V_{2}O_{5}$ were added to $ZnWO_4$. 40 mol% $B_{2}O_{3}$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to $-7.6ppm/^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of $V_{2}O_{5}$ in $ZnWO_{4}-B_{2}O_{3}$ system enhanced liquid phase sintering. 0.1 wt% $V_{2}O_{5}$ addition to the $0.6ZnWO_{4}-0.4B_{2}O_{3}$ system, reduced the sintering temperature down to $950^{\circ}C$. Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and $-21.6ppm/^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.386-389
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• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, ZnWO$_4$ was turned out the suitable LTCC material. ZnWO$_4$ can be sintered up to 98% of full density at 105$0^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and -70ppm/$^{\circ}C$, respectively In order to modify the dielectric properties and densification temperature, B$_2$O$_3$ and V$_2$O$_{5}$ were added to ZnWO$_4$. 40 mol% B$_2$O$_3$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to -7.6ppm/$^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of V$_2$O$_{5}$ in ZnWO$_4$-B$_2$O$_3$ system enhanced liquid phase sintering. 0.lwt% V$_2$O$_{5}$ addition to the 0.6ZnWO$_4$-0.4B$_2$O$_3$ system, reduced the sintering temperature down to 95$0^{\circ}C$ Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and -21.6ppm/$^{\circ}C$ respectively.ively.

• Journal of the Korea Institute of Military Science and Technology
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• v.25 no.6
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• pp.580-585
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• 2022

In this study, the high-temperature dielectric constant of Si₃N₄ ceramics, a representative non-oxide-based radome material, was evaluated and the cause of the dielectric constant change was analyzed in relation to the oxidation behavior. The dielectric constant of Si₃N₄ ceramics was 7.79 at room temperature, and it linearly increased as the temperature increased, showing 8.42 at 1,000 ℃. As results of analyzing the microstructure and phase for the Si₃N₄ ceramics before and after heat-treatment, it was confirmed that oxidation did not occur at all or occurred only on the surface at a very insignificant level below 1,000 ℃. Based on this, it is concluded that the increase in the dielectric constant according to the temperature increase of Si₃N₄ ceramics is irrelevant to the oxidation behavior and is only due to the activation of charge polarization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.642-645
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• 2002

Microwave dielectric properties of $ZnWO_4$ ceramic were investigated with calcination and sintering temperatures. The dielectric properties required for such application are high dielectric constant$(\varepsilon_r)$, high $Q{\times}f_o$ value and low temperature coefficient of resonant frequency$(\tau_f)$. These requirement correspond to necessities for size reduction, excellent frequency selectivity, good temperature stability of devices. $ZnWO_4$ ceramics could be sintered at low $1075^{\circ}C$, which was comparatively low temperature for microwave dielectrics. As a result, $ZnWO_4$ showed the dielectric constant of 13, quality factor($Q{\times}f_o$ value) of 22000 and 'temperature coefficient of resonant frequency$(\tau_f)$ of $-65{\pm}5ppm/^{\circ}C$.