• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.801-804
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• 2000

High-temperature superconductor of Bi-2212 system was fabricated by CFP(Centrifugal Forming Process). To make a uniform specimen slurry was prepared in the ratio of 7:3(powder : binder) and ball milled for 24 hours. Milled slurry was charged into a rotating mold with 450 rpm and dried at room temperature. Then the specimen was performed binder burn-out at 35$0^{\circ}C$ and heated for partial melting to 86$0^{\circ}C$. XRD analysis of most specimens were shown 2212 phase and observed a local plate shped microstructure with a well aligned c-axis direction from SEM images. Measured T$_{c}$(Critical temperature) was about 64 K.K.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.118-118
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• 1994

Processings of the P $b_2$S $r_2$( $Y_{1-x}$ C $a_{x}$) C $u_3$ $O_{8+{\delta}}$ (2213)system for x=0.4-0.6 to control deleterious oxidative decomposition have been studied. Our results show that comounds are stable at both low p $O_2$ and high p $O_2$ if they are suitably oxidized. Various oxidation and deoxidation procedures have been investigated in order tp determine the optimum hole concentration in the Cu $O_2$layers for the maximum $T_{c}$. In cases x=0.5 and x=0.6, the optimum hole concentration in the 2213-phase is achieved, but with accelerated oxidative decomposition. Destite this, the maximum $T_{c}$~80-83K for the 2213-phase can be deduced when x=0.5 to 0.6 to 0.6

• Progress in Superconductivity
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• 제3권2호
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• pp.229-234
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• 2002

In this paper, we analyzed the fault current performance in a $high-T_{c}$ superconductor(HTS) which was installed on flux-lock reactor with an external magnetic field coil covering the HTS. In this HTS fault current limiter using flux-lock concepts, the initial limiting current level can be controlled by adjusting the inductance of the coils. Furthermore, the current limiting characteristics of $high-T_{c}$ superconducting FCL can be improved by applying the external magnetic field into the $high-T_{c}$ superconductor. This paper discusses current limiting performance according to the inductance of the coil 1 in two cases with ac magnetic field coil or not and suggests the methods to improve the current limiting factor $P_{limit}$, which is defined as the ratio of the limited current $I_{FCL}$ at the current limiting phase to the prospective short -circuit current $I_{PSC}$.TEX> PSC/.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 1994년도 추계학술대회강연 및 발표대회 강연및 발표논문 초록집
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• pp.24-24
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• 1994

• Bulletin of the Korean Chemical Society
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• 제21권1호
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• pp.105-109
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• 2000

High-performance liquid chromatography is suitable for getting thermodynamic information about solute-solvent interactions. We used a squalane impregnated $C_{18}$ phase as a presumably bulk-like stationary phase to secure a simple partition mechanism for solute retention in reversed phase liquid chromatographic system. We measured retention data of some selected solutes (benzene, toluene, ethylbenzene, propylbenzene, butylbenzene, phenol, benzylalcohol, phenethylalcohol, benzylacetone, acetophenone, benzonitrile, benzylcyanide) at 25, 30, 35, 40, 45, and 50 $^{\circ}C$ in 30/70, 40/60, 50/50, 60/40 and 70/30 (v/v%) acetonitrile/water eluents. The van't Hoff plots were nicely linear, thus we calculated dependable thermodynamic values such as enthalpies and entropies of solute transfer from the mobile phase to the stationary phase based on more than four retention measurements on different days (or weeks). We found that the cavity formation effect was the major factor in solute distribution between the mobile and stationary phases in the system studied here. Our data were com-pared with some relevant literature data.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2005년도 추계학술발표대회 개요집
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• pp.262-264
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• 2005

$Bi_{2}Sr_{2}CaCu_{2}O_{x}$(Bi-2212) and $Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{y}$(Bi-2223) high-$T_{c}$ superconductor(HTS) coating have been prepared by plasma spraying and heaat treatment. The Bi-2212 HTS coating later is synthesized through the peritectic reaction between Sr-Ca-Cu oxide coating layer and Bi-Cu oxide coating later, and $Bi_{2}Sr_{2}CaCu_{2}O_{y}$(Bi-2212) superconducting phase grow by partial melting process. The superconducting characteristic depends strongly on the conditions of the partial melting process. the Bi-2212 HTS layer consists of the whiskers grown in the diffusion direction. Above the 2212 layer, Bi-2223 phase and secondary phase was observed. The secondary phase is distributed uniformly over the whole surface. This is caused to the microcrack on the coatings surface. Despite everything, the film shows superconducting with an onset $T_{c}$ of about 115K. There are two changes steps. One changes (1step) at 115K is due to the diamagnetism of the Bi-2223 phase and the other changes (2step) at 78K is due to the diamagnetism of the Bi-2212 phase.

• 소성∙가공
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• 제17권7호
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• pp.507-510
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• 2008

Effect of V addition on the precipitation behavior and strength of Fe-36Ni based high strength Invar alloy for power transmission wire was investigated. Fe-36Ni Invar alloy plates were fabricated using conventional ingot casting followed by hot rolling. High strength can be obtained through precipitation hardening and strain hardening by cold rolling. Simulation using FactSage$^{(R)}$ revealed that equilibrium phases which can be formed are two kinds of MC-type precipitates, $Mo_{2}C$ and $M_{23}C_6$ carbide. The latter stoichiometric carbide was expected to be formed at relatively lower temperature of $800^{\circ}C$.

• 한국초전도ㆍ저온공학회논문지
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• 제18권4호
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• pp.15-20
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• 2016

The effects of electron beam (EB) irradiation on the superconducting critical temperature ($T_c$) and critical current density ($J_c$) of YBCO films were studied. The YBCO thin films were irradiated using a KAERI EB accelerator with an energy of 0.2 MeV and a dose of $10^{15}-10^{16}e/cm^2$. A small $T_c$ decrease and a broad superconducting transition were observed as the EB dose increased. The value of $J_cs$ (at 20 K, 50 K and 70 K) increased at doses of $7.5{\times}10^{15}$ and $2.2{\times}10^{16}e/cm^2$. However, $J_cs$ decreased as the dose increased further. The X-ray diffraction (XRD) analysis showed that the c axis of YBCO was elongated and the full width at half maximum (FWHM) increased as the dose increased, which is strong evidence of the atomic displacement by EB irradiation. The transmission electron microscopy (TEM) showed that the amorphous layer formed in the vicinity of the surfaces of the irradiated films. The amorphous phase was often present as an isolated form in the interior of the films. In addition to the formation of the amorphous phase, many striations running along the a-b direction of YBCO were observed. The high magnification lattice image showed that the striations were stacking faults. The enhancement of $J_c$ by EB irradiation is likely to be due to the lattice distortion and the formation of defects such as vacancies and stacking faults. The decrease in $J_c$ at a high EB dose is attributed to the extension of the amorphous region of a non-superconducting phase.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2001년도 춘계학술대회 논문집
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• pp.172-175
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• 2001

The high temperature deformation behavior of two-phase gamma TiAl alloy has been investigated with the variation of temperature and ${\gamma}/{\alpha}_2$ volume fraction. For this purpose, a series of load relaxation tests and tensile tests have been conducted at temperature ranging from 800 to $1050^{\circ}C$. In the early stage of the deformation as in the load relaxation test experimental flow curves of the fine-grained TiAl alloy are well fitted with the combined curves of two processes (grain matrix deformation and dislocation climb) in the inelastic deformation theory. The evidence of grain boundary sliding has not been observed at this stage. However, when the amount of deformation is large (${\epsilon}{\approx}$ 0.8), flow curves significantly changes its shape indicating that grain boundary sliding also operates at this stage, which has been attributed to the occurrence of dynamic recrystallization during the deformation. With the increase in the volume fraction of ${\alpha}_2$-phase, the flow stress for grain matrix deformation increases since ${\alpha}_2$-Phase is considered as hard phase acting as barrier for dislocation movement. It is considered that cavity initiation is more probable to occur at ${\alpha}_2/{\gamma}$ interface rather than at ${\gamma}/{\gamma}$ interface.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.