• 열처리공학회지
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• 제4권1호
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• pp.13-18
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• 1991

The formation of high $T_c$ phase is very sluggish and c parameter of unit cell of high $T_c$ phase is about $37{\AA}$. High $T_c$ oxide superconductor with a $T_c$ above 100 K has been successfully prepared by solid state reaction method in BiSrCaCuO system by Pb adding. The microstructure related to the formation of the high $T_c$ phase has been investigated. As compared with YBCO compound, the formation reaction of the high $T_c$ requires long time heat treatment. It is due to the transformation from the low $T_c$ phase to high $T_c$ phase. The sintering just below the melting point of the calcined powder mixture is effective on the formation of the high $T_c$ phase in Pb-added BiSrCaCuO system. The growth of the high $T_c$ superconducting phase has a thin plate shape, which is characterized by the c parameter of $37{\AA}$. The formation of the high $T_c$ phases is delayed by the excessive addition of Pb. The lattice parameter(c) of the unit cell (both the low and high $T_c$ phases) is increased with increase of Pb.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.221-223
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• 1999

In this work, samples were manufactured variously by changing conventional calcining and sintering conditions and we tried the utilization by making the heat treatment time, which is demanded to high-Tc phase formation, much shorter. We found out optimal heat treatment conditions with the analysis on formation process at superconducting phase in term of the change of calcining and sintering time and then, examined X-ray diffraction(XRD) patterns, scanning electron microscope(SEM) measurement and energy dispersive X-ray spectrometer(EDX) of the samples manufactured under heat treatment conditions which we suggest here. As a result, 2223 high-$T_c$, phase of (Bi,Pb)SrCaCuO superconductor starting with ($Bi_l$ xPbx,)$_2$$Sr_2$$Ca_2$$Cu_3$$O_y$, composition was formed from 1 hr sintering sample at temperature nearby melting point and also the completed sample with calcining and sintering time of 9 hr was formed high-$T_c$.low-$T_c$ phase appearing in sight above the critical temperature of liquid $N_2$.

• 한국재료학회지
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• 제23권6호
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• pp.329-333
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• 2013

The structural phase transformations of $0.7Pb(Mg_{1/3}Nb_{2/3})O_3-0.3PbTiO_3$ (PMN-0.3PT) were studied using high resolution x-ray diffraction (HRXRD) as a function of temperature and electric field. A phase transformational sequence of cubic (C)${\rightarrow}$tetragonal (T)${\rightarrow}$rhombohedral (R) phase was observed in zero-field-cooled conditions; and a $C{\rightarrow}T{\rightarrow}$monoclinic $(M_C){\rightarrow}$ monoclinic ($M_A$) phase was observed in the field-cooled conditions. The transformation of T to $M_A$ phase was realized through an intermediate $M_C$ phase. The results also represent conclusive and direct evidence of a $M_C$ to $M_A$ phase transformation in field-cooled conditions. Beginning from the zero-field-cooled condition, a $R{\rightarrow}M_A{\rightarrow}M_C{\rightarrow}T$ phase transformational sequence was found with an increasing electric field at a fixed temperature. Upon removal of the field, the $M_A$ phase was stable at room temperature. With increasing the field, the transformation temperature from T to $M_C$ and from $M_C$ to $M_A$ phase decreased, and the phase stability ranges of both T and $M_C$ phases increased. Upon removal of the field, the phase transformation from R to $M_A$ phase was irreversible, but from $M_A$ to $M_C$ was reversible, which means that $M_A$ is the dominant phase under the electric field. In the M phase region, the results confirmed that lattice parameters and tilt angles were weakly temperature dependent over the range of investigated temperatures.

• 대한금속재료학회지
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• 제46권11호
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• pp.762-769
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• 2008

Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

• 한국결정성장학회지
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• 제9권5호
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• pp.475-479
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• 1999

Langasite ($La_{3}Ga_{5}SiO_{14}$) was found to have wide application as a promising piezoelectric material. It has high thermal stability of the frequency and large electromechanical coupling factor. For the further development of new compounds with langasite type structure, powders in the La-Al-Si-O system were synthesized by a modified Pechini process. The evolution of the crystalline phase during calcination was studied using TG-DTA, XRD and TEM for the precursor powders. Decomposition proceeded via dehydration and removal of excess solvents at low temperatures ($T<500^{\circ}C$), followed by the crystallization of lanthanum aluminum silicate ($T>800^{\circ}C$) and phase transformation to $LaAlO_{3}$ phase ($T>1200^{\circ}C$). Transmission electron microscopy (TEM) of the calcined powders showed diffuse hollow rings corresponding to an amorphous phase at $800^{\circ}C$ and clear diffraction patterns corresponding to a crystalline phase from the P321 space group ($T<1200^{\circ}C$) and the R3m ($T<1200^{\circ}C$).

• 한국광물학회지
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• 제15권3호
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• pp.161-169
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• 2002

고온-고압 상태에서 티탄철석 ($FeTiO_3$)의 상변이에 대한 연구가 있었으나, 그 결과는 서로 일치하지 않고 있다. 특히, 티탄철석상과 페롭스카이트상의 상변이 경계는 담금방법에 의해 결정된 것으로 신뢰도에 의문이 제기되고 있다. 이러한 문제를 해결하기 위해, 고온-고압 현장상태에서 라지 볼륨 기기와 방사광을 이용하여 19 GPa와 $700^{\circ}C$의 범위에서 X선 회절실험을 시행하였다. 이러한 실험결과, 페롭스카이트상은 상온에서 16 CPa 이상의 압력에서 안정하며, 15 CPa 근처에서 $LiNbO_3$상으로 변이한다. 또한 이 두 고온-고압상은 $500^{\circ}C$에서는 순간적인 상변이를 하고 있다. $LiNbO_3$상은 각각 13 CPa 및 300'E와 10.8 GPa 및 400'E에서 티탄철석상으로 상변이 한다. 따라서 본 실험결과는 $LiNbO_3$상은 고온-고압하에서 안정 영역을 확보하고 있으며, 페롭스카이트-티탄철석상경계는 이전에 발표된 결과와는 매우 다르다는 것을 지시해주고 있다.

• Journal of Magnetics
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• 제16권1호
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• pp.10-14
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• 2011

This study reports on Co/$Co_2$MnSn two-phase magnets. The Co/$Co_2$MnSn two-phase magnet has Co precipitates in a $Co_2MnSn$ Heusler alloy matrix, in which the two phases are exchange-coupled at the phase boundary. The as-casted Co/$Co_2$MnSn system, which has Co-Mn solid solution precipitates in a $Co_2$MnSn Heusler alloy matrix, showed that the Co solid solution precipitates are crystallographically coherent and there is exchange coupling at the phase boundary. To form pure Co precipitates by removal of Mn solute atoms in Co-Mn solid solution, annealing was carried out 48 hours at $870^{\circ}C$. After annealing, the low $T_c$ and low magnetization phase of the Co-Mn solid solution became a high $T_c$ and high magnetization phase of hexagonal Co.

• 한국세라믹학회지
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• 제38권12호
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• pp.1104-1109
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• 2001

110K상의 산화물 고온초전도체를 B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$C $a_{2.03}$C $u_{3.06}$ $O_{10+}$$\delta$/의 출발조성비로 고상반응법(solid-state reaction)에 의해 합성하였다. 이렇게 합성된 Bi계 110K상의 산화물 고온초전도 물질을 다시 분말 상태로 만든 후, Ag 금속분말을 10wt%, 30wt%, 50wt%의 각 비율로 혼합하였다. Ag 금속분말이 혼합된 시편들을 86$0^{\circ}C$~875$^{\circ}C$로 24시간 동안 최종 소결시켰다. 그후, 각 시편들에 대하여 x-선, $T_{c}$, SEM 등을 측정하여 Ag 혼합량에 대한 초전도특성 및 표면의 grain 크기변화 등에 대한 조사를 진행하였다. Ag 혼합량이 증가됨에 따라 Ag peak의 강도는 증가되었고, 시편 내 2223 상의 비율은 감소하고 2212상의 비율은 증가되었다.비율은 증가되었다.

• E2M - 전기 전자와 첨단 소재
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• 제9권4호
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• pp.404-409
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• 1996

The structural and electric properties of $Y_{1-x}$YbF$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-y}$(x=0.0, 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6) have been investigated by using XRD(X-ray diffraction), TMA(thennomechanical analysis), NMR(nuclear magnetic resonance) analysis and four probe method. $Y_{1-x}$YbF$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-y}$ samples were prepared by conventional solid-state reaction method using $Y_{2}$O$_{3}$, BaCO$_{3}$, CuO and YbF$_{3}$ power. TMA and high temperature XRD results shows that orthorhombic to tetragonal phase transition occurs in the unfluorinated 1-2-3 sample while the phase change is not observed in the fluorinated 1-2-3 samples. Superconducting transition temperature(T$_{c}$) increases with increasing YbF$_{3}$ content ; T$_{c}$, of the sample reaching maximum of 102K for x=0.3, and then decreases with further increasing YbF$_{3}$ content. The structural analysis and T$_{c}$ results shows that the fluorine doping stabilize the orthorhombic phase, together with the increase in T$_{c}$.}$ c/.TEX> c/.

• 한국재료학회지
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• 제22권7호
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• pp.342-345
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• 2012

The dielectric properties and phase transformation of poled <001>-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$(PMN-x%PT) single crystals with compositions of x = 20, 30, and 35 mole% are investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from $-25^{\circ}C$ to $100^{\circ}C$ and from $-25^{\circ}C$ to $80^{\circ}C$ for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (${\varepsilon}$)-temperature (T) characteristics above the Curie temperature were found to be described by the equation$(1/{\varepsilon}-1/{\varepsilon}_m)^{1/n}=(T-T_m)/C$, where ${\varepsilon}_m$ is the maximum dielectric constant and $T_m$ is the temperature giving ${\varepsilon}_m$, and n and C are constants that change with the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of mesh scans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary.