• Proceedings of the KIEE Conference
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• 1999.07a
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• pp.206-210
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• 1999

Since the introduction of IGBT PWM inverters, many low-voltage induction motors have been driven by them. Recently, the stator winding insulation failures have attracted much concern due to high dv/dt of IGBT inverter output. In this paper, presented are the detailed insulation test results of 26 low-voltage induction motors. Six different types of insulation techniques are applied to 26 motors. The tests include PD, $tan{\delta}$, and DIV tests. Also, break-down tests by high voltage pulses are performed.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.473-477
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• 2007

The development of advanced Insulated Gate Bipolar Transistor(IGBT)has enabled high-frequency switching operation and has improved the performance of PWM inverters for motor drive. However, the high rate of dv/dt of IGBT has adverse effects on motor insulation stress. In many motor drive applications, the inverter and motor are separated and it requires long motor feds. The long cable contributes high frequency ringing at the motor terminal and it results in hight surge voltage which stresses the motor insulation. The inverter output filter and RDC snubber are conventional method which can reduce the surge voltage. In this paper, we propose the new low loss snubber to reduce the motor terminal surge voltage. The snubber consists of the series connection of charging/discharging capacitor and the voltage-clamped capacitor. At IGBT turn-off, the snubber starts to operate when the IGBT voltage reaches the voltage-clamped level. Since dv/dt is decreased by snubber operating, the peak level of the surge voltage can be reduced. Also the snubber operates at the IGBT voltage above the voltage-clamped level, the snubber loss is largely reduced comparing with RDC snubber. The proposed snubber enables to reduce the motor terminal surge voltage with low loss.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.210-213
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• 2017

In this paper, we analyzed the structural design and electrical characteristics of a 3.3 kV super junction FS IGBT as a next generation power device. The device parameters were extracted by design and process simulation. To obtain optimal breakdown voltage, we researched the breakdown characteristics. Initially, we confirmed that the breakdown voltage decreased as trench depth increased. We analyzed the breakdown voltage according to p pillar dose. As a result of the experiment, we confirmed that the breakdown voltage increased as p pillar dose increased. To obtain more than 3.3 kV, the p pillar dose was $5{\times}10^{13}cm^{-2}$, and the epi layer resistance was $140{\Omega}$. We extracted design and process parameters considering the on state voltage drop.

• Journal of Power Electronics
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• v.2 no.2
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• pp.88-94
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• 2002

The demand for protection of power electronic application has during the last couple of vears increased regarding the high-power IGBT modules. Even with an active protection, a high power IGBT still has a risk of exhibiting a violent rupture in the case of a fault if IGBT Fuses do not protect it. By introducing fuses into the circuit this will increase the circuit inductance and slight inductance over-voltage during the turn-off of the diode and the IGBT. It is therefore vital when using fuses that the added inductance is kept at a minimum. This paper discuss three issues regarding the IGBT Fuse protection of adding inductance of existing High-speed and new Typower Fuse protection. First, the problem of adding inductance of exiting High-speed and new Typower Fuse DC-link circuit is treated, second a short discussion of protection of the IGBT module is done, and finally, the impect of the high frwquency loading on the currying capability of the fuses is presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.266-269
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• 2012

The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.107-108
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• 2016

Solid State Transformer(SST) has been recently regarded as a good alternative to conventional low frequency transformer. SST is consist of several high voltage power stage, so it is important to select optimal semiconductor switches for specification. This paper presents optimal IGBT switches for low switching losses using analyzing switching characteristics of several high voltage IGBT switches. Double Pulse Tester(DPT) experiment is used to verify characteristics of this IGBT switches.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.507-510
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• 2005

High voltage pulse power supply using Marx generator and solid-state switches is proposed in this study. The Marx generator is composed of 12 stages and each stage is made of IGBT stack, two diode stacks, and capacitor. To charge the capacitors of each stage in parallel, inductive charging method is used and this method results in high efficiency and high repetition rates. It can generate the pulse voltage with the following parameters: Voltage: up to 120kv Rising time: sub ${\mu}S$ Pulse width: up to $10{\mu}S$, Pulse repetition rate: 1000pps The proposed pulsed power generator uses IGBT stack with a simple driver and has modular design. So this system structure gives compactness and easiness to implement total system. Some experimental results are included to verify the system performances in this paper.

• Journal of Digital Contents Society
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• v.18 no.6
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• pp.1193-1198
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• 2017

The IGBT structure developed in this paper is used as a high power switch semiconductor for DC transmission and distribution and it is expected that it will be used as an important electronic device for new and long distance DC transmission in the future by securing fast switching speed and improved breakdown voltage characteristic. As a new type of next generation power semiconductors, it is designed to improve the switching speed while at the same time improving the breakdown voltage characteristics, reducing power loss characteristics, and achieving high current density advantages at the same time. These improved properties were obtained by further introducing SiO2 into the N-drift region of the Planar IGBT and were compared and analyzed using the Sentaurus TCAD simulation tool.

• Journal of IKEEE
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• v.22 no.2
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• pp.339-343
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• 2018

Power semiconductors are semiconductors capable of controlling power over 1W and are mainly used as switches. This power semiconductor device has been developed with the goal of reducing power consumption and high breakdown voltage. This research was analyzed electrical characteristics of IGBT(Insulated Gate Biopolar Transistor) according to diffusion length of JFET region. The Diffusion length of JFET region was controlled by temperature and time using T-CAD simulator. As a result of experiments, we could obtain 1.14V low on state voltage drop by fixing 1440V breakdown voltage.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.703-707
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• 2001

The demand for protection of power electronic applications has during the last couple of years increased regarding the high-power IGBT modules. Even with an active protection, a high power IGBT still has a risk of exhibiting a violent rupture in the case of a fault if IGBT Fuses do not protect it. By introducing fuses into the circuit this will increase the circuit inductance and slight increase the over-voltage during the turn-off of the diode and the IGBT. It is therefore vital when using fuses that the added inductance is kept at a minimum. This paper discuss three issues regarding the IGBT Fuse protection. First, the problem of adding inductance of existing High-Speed and new Typower fuses in DC-link circuit is treated, second a short discussion of the protection of the IGBT module is done, and finally, the impact of the high frequency loading on the current carrying capability of the fuses is presented.