• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.60-60
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• 2008

We manufactured Liquid Crystal Polymer (LCP) and (1-x)$BaTiO_3-xSrTiO_3$(BST) ceramic composites and investigated dielectric properties to use as embedded capacitor in printed circuit boards and replace LTCC substrates. The dielectric properties of these composites are varied with volume fraction of BST and ratios of BT/ST. Dielectric constants are in the range of 3~28. In addition, we could get low TCC and High Q value that could not achieve in other ceramic-polymer composites. Especially, in composite with x=0.4 and 50vol% BST, the dieletric constant and Q-value are 27 and 300, respectively. And more TCC is -116~145ppm/$^{\circ}C$ in the temperature range of -55~$125^{\circ}C$. We think that this composites can be used high-Q substrate material like LTCC and embedded temperature compensation capacitor in printed circuit boards.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.25.2-25.2
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• 2011

Recently, thin film capacitors used for vehicle inverters are small size, high capacitance, fast response, and large capacitance. But its applications were made up of liquid as electrolyte, so its capacitors are limited to low operating temperature range and the polarity. This research proposes using Ni-P alloys by electroless plating as the electrode instead of liquid electrode. Our substrate has a high aspect ratio and complicated shape because of anodic aluminum oxide (AAO). We used AAO because film thickness and effective surface area are depended on for high capacitance. As the metal electrode instead of electrolyte is injected into AAO, the film capacitor has advantages high voltage, wide operating temperature, and excellent frequency property. However, thin film capacitor made by electroless-plated Ni on AAO for full-filling into etched tunnel was limited from optimizing the deposition process so as to prevent open-through pore structures at the electroless plating owing to complicated morphological structure. In this paper, the electroless plating parameters are controlled by temperature in electroless Ni plating for reducing reaction rate. The Electrical properties with I-V and capacitance density were measured. By using nickel electrode, the capacitance density for the etched and Ni electroless plated films was 100 nFcm-2 while that for a film without any etch tunnel was 12.5 nFcm-2. Breakdown voltage and leakage current are improved, as the properties of metal deposition by electroless plating. The synthesized final nanostructures were characterized by scanning electron microscopy (SEM).

• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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• pp.102-105
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• 2003

The leakage inductance of the High frequency Transformer(HFT) in the flyback topology can be used an inductor of the Low Pass Filter(LPF) to reduce ripple and ripple noise in the output voltage. But, the values of leakage inductance and magnetizing inductance in the HFT are within $\pm20[{\%}]$). And the operating temperature of the HFT increased by the leakage inductance. Therefore, the leakage inductance of the HFT in the flyback topology has minimum and the LPF has non-polarity ceramic capacitor in the output stage. In this paper, the LPF in the flyback topoBogy takes PCB capacitor using double layer of PCB without non-polarity ceramic capacitor. Its experimental results show the reduced ripple noise and the reduced ripple in the output stage.

• 한국산업융합학회 논문집
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• 제26권6_2호
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• pp.1117-1125
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• 2023

The DC part of the DC microgrid power conversion system uses capacitors for buffers of charge and discharge energy for smoothing voltage and plays important roles such as high frequency component absorption, power balancing, and voltage ripple reduction. The capacitor uses an aluminum electrolytic capacitor, which has advantages of capacity, low price, and relatively fast charging/discharging characteristics. Aluminum electrolytic capacitors(AEC) have previous advantages, but over time, the capacity of the capacitors decreases due to deterioration and an increase in internal temperature, resulting in a decrease in use efficiency or an accident such as steam extraction due to electrolyte evaporation. It is necessary to take measures to prevent accidents because the failure diagnosis and detection of such capacitors are a very important part of the long-term operation, safety of use, and reliability of the power conversion system because the failure of the capacitor leads to not only a single problem but also a short circuit accident of the power conversion system.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.20.2-20.2
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• 2011

BMNO dielectric materials with a pyrochlore structure have been chosen and they have quite high dielectric constants about 210 for the bulk material. In the case of thin films, 200-nm-thick BMNO films deposited at room temperature showed a low leakage current density of about $10^{-8}\;A/cm^2$ at 3 V and a dielectric constant of about 45 at 100 kHz. Because high dielectric constant BMNO thin films kept an amorphous phase at a high temperature above $900^{\circ}C$. High dielectric constant BMNO thin films grown at room temperature have many applications for flexible electronic devices. However, because the dielectric constant of the BMNO films deposited at room temperature is still low, percolative BMNO films (i.e., those were grown in a pure argon atmosphere) sandwiched between ultra-thin BMNO films grown in an oxygen and argon mixture have greater dielectric constants than standard BMNO films. However, they still showed a leakage problem at a high voltage application. Accordingly, a new nano-structure that uses BMNO was required to construct the films with a dielectric constant higher than that of its bulk material. The fundamental reason that the BMNO-Bi nano-composite films grown by RF-Sputtering deposition had a dielectric constant higher than that of the bulk material was addressed in the present study. Also we used the graphene as bottom electrode instead of the Cu bottom electrode. At first, we got the high leakage current density value relatively. but through this experiment, we could get improved leakage current density value.

• 한국표면공학회지
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• 제30권1호
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• pp.44-56
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• 1997

Influence of electrochemical etching conditions on capacitance gain of aluminium electrolytic on capacitor foil has been investigated by etching cubic textured high purity aluminum foil in dilute hydrochloric acid. Uniformly distributed etch pit tunnels on aluminum surface have been obtained by pretreatment aluminium foil in 10% NaOH solution for 5 minutes followed by electrochemical etching. Electrostatic capacitance of etched aluminium foil anodized to high voltage increased with the increase of current density, total charge, temperature and concentration of electrolyte up to maximum CV-value and then deceased. Election optical observation of the etched foil revealed that the density of etch of etch pits increased with the increase of current density and concentration of electrolyte. this increase of etch pit density enlarged of the increase of capacitance. However, abnormal high current density and high electrolyte concentration induced the local dissolution of the foil surface which resulted the decrease of foil capacitance.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• 한국산학기술학회논문지
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• 제12권10호
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• pp.4288-4295
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• 2011

본 논문에서는 고주파 용접기의 가변 리엑터 및 커패시터를 해석하여 최적화 설계 하였다. 고주파 용접기의 극판 부분은 콘덴서의 역할을 하기 때문에 큰 정전 용량의 콘덴서를 만들기 위해서는 유전율이 큰 재료의 선택과 극판의 면적을 크게 하고, 극판의 간격을 얇게 하여야 한다. 하지만 많은 전류가 흐르기 때문에 저항이 발생하여 열이 발생하게 된다. 이러한 극판의 열 변형을 막기 위하여 냉각수 등을 이용한 방법으로 극판의 열을 식힌다. 이때 극판의 변형 및 온도에 따른 냉각수의 속도를 최적화 하였다.

• 한국신뢰성학회지:신뢰성응용연구
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• 제2권1호
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• pp.1-14
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• 2002

High temperature operating test, temperature humidity test and temperature cycling were performed at various test levels for solid aluminum electrolyte capacitors made by domestic manufacturing company and foreign advanced manufacturing company. It was found that main failure mode of solid aluminum electrolyte capacitors was the decrease of their capacitances. The decrease of their capacitances has the same pattern in these tests. Test result for comparison of characteristics between domestic products and foreign advanced products shows that domestic products have the shorter lifetime and their capacitances decrease more rapidly in high temperature operating test and temperature humidity test. Also in these tests, accelerated tests for high temperature operating test and temperature humidity test were developed.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.640-647
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• 1995

In this study, the BaTiO$\sub$3/ capacitor add to MnO$\sub$2/ like depressor and shifter were investigated for temperature or voltage compensation by structural and electrical analysis. The relative density of BCTM, generating poly crystall and formation of lattice defect, has a 90[%] over as the CaTiO$\sub$3/ come out to control grain size. The current density of BCTM2 increased non-ohmic in high-electric field but that BCTM3 and BCTM4 had a few changing. The BCTM3 and BCTM4 unformated grain boundary shown temperature compensation properties, so that the dielectric constant was low value. The curie point was near 140[.deg. C] in BCTM1 and BCTM4, but BCTM3 and BCTM4 not shown the curie point. It is found that the charging energy of BCTM4 was changed 6[%] according to rising temperature from room temperature to 417[K]. The formation of BaMnO$\sub$3/ was low dielectric constant to change frequency and temperature.