Electrical properties of hafnium silicate deposited by atomic layer deposition as a function of annealing temperature (ALD 방법으로 증착된 Hf-silicate 박막의 열처리온도에 따른 전기적 특성)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2007.11a
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- pp.107-108
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- 2007