• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.349-352
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• 2014

Anodic alumina oxide (AAO), a self-ordered hexagonal array, has various applications in nanofabrication such as the fabrication of nanotemplates and other nanostructures. In order to obtain highly ordered porous alumina membranes, a two-step anodization or prepatterning of aluminum are mainly conducted with straight electric field. Electric field is the main driving force for pore growth during anodization. However, impurities in aluminum can disturb the direction of the electric field. To confirm this, we anodized two different aluminum foil samples with high purity (99.999%) and relatively low purity (99.8%), and compared the differences in the surface morphologies of the respective aluminum oxide membranes produced in different electric fields. Branched pores observed in porous alumina surface which was anodized in low-purity aluminum and the size; dimensions of the pores were found to be usually smaller than those obtained from high-purity aluminum. Moreover, anodization at high voltage proceeds to a significant level of conversion because of the high speed of the directional electric field. Consequently, anodic alumina membrane of a specific morphology, i.e., meshed pore, was produced.

• 한국기계가공학회지
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• 제13권4호
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• pp.13-20
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• 2014

In this paper, the effects of a nonionic surfactant on the etch uniformity and the etch profile during the wet-etching process of high-purity aluminum were investigated for the fabrication of uniform micropattern arrays. To improve the surface roughness of a high-purity aluminum plate, a mechanical lapping process and an electrolytic polishing process were used. After electrolytic polishing process, the surface roughness, Ra, of the high-purity aluminum plate was improved from $1.25{\mu}m$ to $0.02{\mu}m$. A photoresist was used as an etching mask during the aluminum etching process, where the mixture of phosphoric acid, acetic acid, nitric acid, a nonionic surfactant and water was used as the aluminum etchant. Different amounts of the Triton X-100 nonionic surfactant were added to the aluminum etchant to investigate the effect of a nonionic surfactant during the wet-etching process of high-purity aluminum. The etch rate and the etch profile were measured by an optical interferometer and a scanning electron microscope.

• 한국결정성장학회지
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• 제24권1호
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• pp.1-7
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• 2014

질화알루미늄(AlN)은 뛰어난 열적, 전기절연성 특성을 갖고 있어 반도체 기판용 재료나 전자 패키징 재료로 주목받고 있다. 질화알루미늄은 소결온도가 높고 불순물로 인한 물성저하 때문에 고순도화 및 나노원료화가 필수적이다. 본 연구에서는 RF 유도결합 열플라즈마를 이용하여 알루미늄 분말로부터 고순도의 질화알루미늄 나노분말을 합성하였다. Sheath gas로 사용된 암모니아의 유량 제어를 통해 고순도의 질화알루미늄 나노분말이 합성되는 조건을 확립하고자 하였으며 합성된 분말은 XRD, SEM, TEM, BET, FTIR, N-O분석을 통해 특성분석을 진행하였다.

• Imaging Science in Dentistry
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• 제53권3호
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• pp.217-220
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• 2023

Purpose: This pilot study was conducted to evaluate half-value layer (HVL) measurements obtained using a semiconductor dosimeter for intraoral radiography. Materials and Methods: This study included 8 aluminum plates, 4 of which were low-purity (less than 99.9%) and 4 high-purity (greater than 99.9%). Intraoral radiography was performed using an intraoral X-ray unit in accordance with the dental protocol at the authors' affiliated hospital: tube voltage, 60 kVp and 70 kVp; tube current, 7 mA; and exposure time, 0.10 s. The accuracy of HVL measurements for intraoral radiography was assessed using a semiconductor dosimeter. A simple regression analysis was performed to compare the aluminum plate thickness and HVL in relation to the tube voltage (60 kVp and 70 kVp) and aluminum purity (low and high). Results: For the low-purity aluminum plates, the HVL at 60 kVp (Y) and 70 kVp (Y) was significantly correlated with the thickness of the aluminum plate (X), with Y=1.708+0.415X (r=0.999, P<0.05) and Y=1.980+0.484X (r=0.999, P<0.05), respectively. Similarly, for the high-purity aluminum plates, the HVL at 60 kVp (Y) and 70 kVp (Y) was significantly correlated with the plate thickness(X), with Y=1.696+0.454X (r=0.999, P<0.05) and Y=1.968+0.515X (r=0.998, P<0.05), respectively. Conclusion: This pilot study examined the relationship between aluminum plate thickness and HVL measurements using a semiconductor dosimeter for intraoral radiography. Semiconductor dosimeters may prove useful in HVL measurement for purposes such as quality assurance in dental X-ray imaging.

• 한국분말재료학회지
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• 제11권4호
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• pp.294-300
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• 2004

This study for preparation of aluminum nitride (AlN) with high purity was carried out by self-propagating high-temperature synthesis method in two different systems, $Al-N_{2}$ and $Al-N_{2}$-AlN, with the change of nitrogen gas pressure and dilution factor. On the occasion of $Al-N_{2}$ system, unreacted aluminum was detected in the product in spite of high nitrogen pressure, 10 MPa, This may be caused by obstructing nitrogen gas flow to inner part of molten and agglomerate of aluminum, formed in pre-heating zone. In $Al-N_{2}$-AlN system, AlN with a purity of 95% or ever can be prepared in the condition of $f_{Dil}\geq0.5$, $P_{N_{2}}\geq$ 1 MPa, and the purity can be elevated to 98% over in the condition of $f_{Dil}$ = 0.7 and $P_{N_{2}}$ = 10 MPa.

• 한국재료학회지
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• 제22권9호
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• pp.445-449
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• 2012

We investigate the effects of redox reaction on preparation of high purity ${\alpha}$-alumina from selectively ground aluminum dross. Preparation procedure of the ${\alpha}$-alumina from the aluminum dross has four steps: i) selective crushing and grinding, ii) leaching process, iii) redox reaction, and iv) precipitation reaction under controlled pH. Aluminum dross supplied from a smelter was ground to separate metallic aluminum. After the separation, the recovered particles were treated with hydrochloric acid(HCl) to leach aluminum as aluminum chloride solution. Then, the aluminum chloride solution was applied to a redox reaction with hydrogen peroxide($H_2O_2$). The pH value of the solution was controlled by addition of ammonia to obtain aluminum hydroxide and to remove other impurities. Then, the obtained aluminum hydroxide was dried at $60^{\circ}C$ and heat-treated at $1300^{\circ}C$ to form ${\alpha}$-alumina. Aluminum dross was found to contain a complex mixture of aluminum metal, aluminum oxide, aluminum nitride, and spinel compounds. Regardless of introduction of the redox reaction, both of the sintered products are composed mainly of ${\alpha}$-alumina. There were fewer impurities in the solution subject to the redox reaction than there were in the solution that was not subject to the redox reaction. The impurities were precipitated by pH control with ammonia solution, and then removed. We can obtain aluminum hydroxide with high purity through control of pH after the redox reaction. Thus, pH control brings a synthesis of ${\alpha}$-alumina with fewer impurities after the redox reaction. Consequently, high purity ${\alpha}$-alumina from aluminum dross can be fabricated through the process by redox reaction.

• 한국세라믹학회지
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• 제51권3호
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• pp.201-207
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• 2014

High-purity aluminum nitride nanopowders were synthesized using an RF induction thermal plasma instrument. Ammonia and nitrogen gases were used as sheath gas to control the reactor atmosphere. Synthesized AlN nanopowders were characterized by XRD, SEM, TEM, EDS, BET, FTIR, and N-O analyses. It was possible to synthesize high-purity AlN nanoparticles through control of the ammonia gas flow rate. However, additional process parameters such as plasma power and reactor pressure had to be controlled for the production of high-purity AlN nanopowders using nitrogen gas.

• 공업화학
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• 제9권1호
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• pp.52-57
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• 1998

알루미늄-공기전지의 4M KOH전해질에 아연화합물과 같은 첨가제를 넣어 수소발생 및 알루미늄의 부식에 미치는 영향을 검토하였다. 첨가제중의 아연화합물은 수소발생과전압을 증가시키고, TPC(tripotasium citrate)와 CaO는 알루미늄표면에 치밀한 막을 형성하여 수소발생속도와 알루미늄부식속도를 감소시켰다. 이들 첨가제들에 의해 고순도알루미늄(순도, 99.999%)의 개회로전위는 양의 방향으로, 알루미늄 No 1050(순도, 99.5%)의 개회로전위는 음의 방향으로 약간 이동했다. 개회로전위에서 첨가제는 수소발생속도와 알루미늄 부식속도를 감소시켰으며, 과전압이 증가할수록 수소발생속도가 감소하여 알루미늄의 이용율이 증가하였다. 높은 전류밀도$(>100mA/cm^2)$에서는 TPC/CaO/ZnO 첨가제에 의해 고순도 알루미늄의 이용율이 In,Ga,Tl 합금 알루미늄의 이용율과 비슷하였다.

• 한국세라믹학회지
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• 제26권1호
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• pp.81-90
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• 1989

High purity alumina and amorphous silica were prepared from Ha-dong kaolin by means of appliance of sulfuric acid. The effect of sulfuric acid concentration, reaction temperature and reaction time on the formation of aluminum sulfate was investigated. The precipitation conditions ofaluminum sulfate from the sulfuric acid solution with ethanol and ammonium hydroxide were deteremined. In the optimum condition, the conversion of aluminum oxide in kaolin to aluminum oxide powder was 85.0 percent. Alumina powder was prepared by calcination of the precipitates, and its purity was 99.0 percent.

• 한국세라믹학회지
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• 제16권1호
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• pp.13-20
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• 1979

High purity alumina has been extracted form low grade Korean alunite. Alunite ore was treated by 15% $NH_4OH$ solution, followed by 10% $H_2SO_4$ leaching and metallic impurities such as Fe and Ti were removed by solvent extraction method. Alumina prepared by the extraction process was 99.9% in purity. Hot Petroleum Drying Method has been employed for the preparation of uniformly fine alumina powder, using chemical reagent aluminum sulfate and ammonium aluminum sulfate extrated from Korea alunite. The sinterability of alumina powder prepared by Hot Petroleum Drying Method was shown to be improved in comparison with the one treated by other methods such as ball milling method, but dry pressing was difficult due to the agglomeration of calcined powder. The best slip of alumina powder prepared by Hot Petroleum Drying Method contained a lower soild content than the one treated by other methods. The alumina body formed by soild and drain casting with the former alumina powder showed a higher sintered density.