• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.253-258
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• 2005

This paper presents characteristics of CrOx thin-film, which were deposited on $Al_2$O$_3$ wafer by DC reactive magnetron sputtering in an argon-oxide atmosphere for high temperature applications. The present paper deals with a study of the technological characteristics of thin film resistors to provide a control in obtaining temperature coefficients of resistance of given value. The optimized condition of CrOx thin-film were thickness range of 2500 $\AA$ and annealing condition(350 $^{\circ}C$, 1 hr) in oxide partial pressure(3.5${\times}$10$^{-4}$ torr). Under optimum conditions, the CrOx thin-films is obtained a high resistivity, p=340 $\mu$Ωcm, a low temperature coefficient of resistance, TCR=-55 ppm/$^{\circ}C$. The CrOx thin films resistors which were fabricated in this paper had excellent characteristics as high precision resistors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.913-917
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• 2003

In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)

• 한국정밀공학회지
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• 제29권11호
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• pp.1174-1177
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• 2012

In voltage measurement by using voltage divider with series resistors, error is generated caused by the variation of resistance. In order to reduce these errors, the hardware cost tends to increase in the previous works. In the proposed method, three resistors are used for the voltage divider of which the organization is adjusted by using switches. Three voltages are measured and the ratio of resistance is calculated based on the measured voltages. Since the resistance ratio is calculated by measuring voltages and additional hardware cost is minimal, the voltage can be measured with high accuracy and low cost. Experimental results show that the mean absolute error is 12.1 mV when the input voltage ranges from 5 V to 50 V.

• 마이크로전자및패키징학회지
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• 제11권1호
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• pp.37-42
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• 2004

최근에 3 ㎓이상의 고주파용 전자부품과 소자의 제조에 낮은 저항온도계수(TCR)값과 높은 정밀도를 갖는 박막저항이 사용되고 있다. Ni-Cr 박막저항은 낮은 TCR 값과 저항에 대한 높은 안정성 때문에 저항 물질로 사용되는 가장 일반적인 물질이다. 본 연구에서는 $Ni_{72}Cr_Al_3Mn_4Si$(wt%)이 첨가된 우수한 저항특성을 갖는 S-type의 Evanohm 합금 타겟과 스퍼터링 장비를 이용하여 박막 저항을 제조하였다. 또한 열처리 조건을 $200^{\circ}C$, 300$300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$로 변화시키면서 고주파 박막 저항의 미세구조와 전기적 특성을 관찰하여 최상의 열처리 조건을 알아보았다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.145-150
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• 2003

최근에 3 GHz이상의 고주파용 전자부품과 소자의 제조에 낮은 TCR 값과 높은 정밀도를 갖는 박막저항이 사용되고 있다. Ni-Cr 박막저항은 낮은 TCR 값과 저항에 대한 높은 안정성 때문에 저항 물질로 사용되는 가장 일반적인 물질이다. 본 연구에서는 $Ni_{72}Cr_{20}Al_3Mn_4Si(wt\%)$ 첨가된 우수한 저항특성을 갖는 s-type의 Evanohm 합금 타겟과 스퍼터링 장비를 이용하여 박막 저항을 제조하였다. 또한 열처리 조건을 $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$로 변화시키면서 고주파 박막저항의 미세구조와 전기적 특성을 관찰하여 최상의 열처리 조건을 알아보았다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.628-635
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• 2004

The characteristic of thin film resistor with low TCR( temperature coefficient of resistance ) and high precision are studied. The thin film resistor for 1/4W was fabricated and characteristic of these resistors was investigated. The fabricated device had the thickness of $2.48{\leqq}$ and the resistivity of $0.27{\omega}mm$. The electrical characteristic was evaluated by HP 4339B and 4284A instruments with HP l6339A. The profile of trimmed structure was also measured by non contact interferometer. The change of resistance and TCR increased with increasing roughness and resistance. To reduce the effect of stress annealing treatment was performed in the range of 563 to 623 K after trimming. The characteristic was improved after annealing. It is expected the fabricated device can be useful for high precision and low TCR. Fabricated thin film resistor has average deviation of resistance less than $0.35{\%}$ and TCR within 60.60ppm/K.

• 한국전기전자재료학회논문지
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• 제20권6호
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• pp.520-526
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• 2007

In order to acquire fundamental informations to fabricate high precision thin film resistors, NiCr/NiCrSi alloy films were prepared using Ni and Cr targets. Effect of composition on the electrical properties of the NiCr/NiCrSi alloy film were then investigated. Considering the effect of Si doping on the electrical and material characteristics, the lower TCR (temperature coefficient of resistance) values could be achieved for samples with Ni/Cr ratio of $0.8{\sim}1.5$ (in a range of relative higher specific resistivity and Cr composition of $40\;wt%{\sim}55\;wt%$) and with Si doping. Consequently, the sample prepared using a DC power showed a good TCR of $-25\;ppm/^{\circ}C$, which implies that increase of specific resistivity and decrease of TCR would be achieved more efficiently not for Ni-Cr binary material but for Si doped Ni-Cr ternary material, and not using RF power but using DC power in the sputtering process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.977-978
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• 2007

The phase angle which is mainly depend on time constant $\tau$ of the calculable 10 A and 0.1 ${\Omega}ac/dc$ resistor has been analysed. The low values of resistors are usually inductive and time constant $\tau$ very large compare to high values of resistors. The numerical analysis has been shown that the time constant $\tau$ becomes zero when introduce the compensation capacitance geometrically to the resistive coil with proper dimension. As a result a very low phase angle can be achieved within the realizable dimensions.