• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.1-6
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• 2014

Flip chip bonded LED packages possess lower thermal resistance than wire bonded LED packages because of short thermal path. In this study, thermal and bonding properties of flip chip bonded high brightness LED were evaluated for Au-Sn thermo-compression bonded LEDs and Sn-Ag-Cu reflow bonded LEDs. For the Au-Sn thermo-compression bonding, bonding pressure and bonding temperature were 50 N and 300oC, respectively. For the SAC solder reflow bonding, peak temperature was $255^{\circ}C$ for 30 sec. The shear strength of the Au-Sn thermo-compression joint was $3508.5gf/mm^2$ and that of the SAC reflow joint was 5798.5 gf/mm. After the shear test, the fracture occurred at the isolation layer in the LED chip for both Au-Sn and SAC joints. Thermal resistance of Au-Sn sample was lower than that of SAC bonded sample due to the void formation in the SAC solder.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.5
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• pp.547-555
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• 2008

This parer proposed the path mismatch detection and compensation algorithm with closed form for linear amplification with non-linear components(LINC) system implementation. The LINC system has a merit of using the high efficient amplifier by transferring the non-constant envelop signal which is high peak to average signal ratio into constant envelop signal. However, the performance degradation is very sensitive to the path mismatch such as an amplitude mismatch and a phase mismatch. In order to improve the path mismatch, the error detection and compensation method is introduced by the use of four test signals. Since the presented method has the closed form solution, the efficient and fast detection is available. The digital-IF structure of LINC system applied by the proposed error detection and compensation algorithm was implemented. The performance was evaluated with the IEEE 802.16 WiMAX baseband sinal which has 7 MHz channel bandwidth and 16-QAM. The Error Vector Magnitude(EVM) of -37.37 dB was obtained through performance test, which meets performance requirement of -24 dB EVM. As a result, the introduced error detection and compensation method was verified to improve the LINC system performance.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.509-514
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• 2020

The two key variables of an Si solar cell, i.e., emitter (n-type window layer) and base (p-type substrate) doping levels or concentrations, are studied using Medici, a 2-dimensional semiconductor device simulation tool. The substrate is p-type and 150 ㎛ thick, the pn junction is 2 ㎛ from the front surface, and the cell is lit on the front surface. The doping concentration ranges from 1 × 10¹⁰ cm^-3 to 1 × 10²⁰ cm^-3 for both emitter and base, resulting in a matrix of 11 by 11 or a total of 121 data points. With respect to increasing donor concentration (Nd) in the emitter, the open-circuit voltage (Voc) is little affected throughout, and the short-circuit current (Isc) is affected only at a very high levels of Nd, exceeding 1 × 10¹⁹ cm^-3, dropping abruptly by about 12%, i.e., from Isc = 6.05 × 10^-9 A·㎛^-1, at Nd = 1 × 10¹⁹ cm^-3 to Isc = 5.35 × 10^-9 A·㎛^-1 at Nd = 1 × 10²⁰ cm^-3, likely due to minority-carrier, or hole, recombination at the very high doping level. With respect to increasing acceptor concentration (Na) in the base, Isc is little affected throughout, but Voc increases steadily, i.e, from Voc = 0.29 V at Na = 1 × 10¹² cm^-3 to 0.69 V at Na = 1 × 10¹⁸ cm^-3. On average, with an order increase in Na, Voc increases by about 0.07 V, likely due to narrowing of the depletion layer and lowering of the carrier recombination at the pn junction. At the maximum output power (Pmax), a peak value of 3.25 × 10^-2 W·cm^-2 or 32.5 mW·cm^-2 is observed at the doping combination of Nd = 1 × 10¹⁹ cm^-3, a level at which Si is degenerate (being metal-like), and Na = 1 × 10¹⁷ cm^-3, and minimum values of near zero are observed at very low levels of Nd ≤ 1 × 10¹³ cm^-3. This wide variation in Pmax, even within a given kind of solar cell, indicates that selecting an optimal combination of donor and acceptor doping concentrations is likely most important in solar cell engineering.

• Korean Journal of Food Science and Technology
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• v.21 no.6
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• pp.766-771
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• 1989

physicochemical properties of rice starch isolated from eight varieties were examined to evaluate the rice processing suitability The amylose contents of rice starch were varied with 16.7-29.7%, and IR 30, Godael, Aguja and Lengkwang varieties showed higher amylose content than the other varieties. The water binding capacity and blue value were in the range of 87.0 103.0 and 0.178-0.305, respectively. As the amylose content increased, the amylogram pasting temperature and the break down ratio increased, while the peak viscosity did not show any significant difference. The transmittance of 0.1% starch suspension slowly increased at $50^{\circ}C$ in the low-amylose content rice group, and rapidly increased at $65^{\circ}C$ in the high-amylose content rice group, but there were no differences above $75^{\circ}C$ among varieties. Also the low-amylose rice starch showed higher values in the swelling power and solubility. The hardness of the 30% rice starch gels was low in low-amylose one. During storage at $20^{\circ}C$ for 14 days, the increment of hardness was more slow in high-amylose one. The retrogradation velocity constant of rice starch gel by Avrami equation was the highest as 0.219 in Aguja variety.

• Korean Journal of Optics and Photonics
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• v.19 no.1
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• pp.68-72
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• 2008

Fiber-optic strain sensors based on Bragg reflection gratings produce the change of reflection spectrum when an external stress is applied on the sensor. To measure the Bragg reflection wavelength in high speed, an arrayed waveguide grating device is incorporated in this work. By monitoring the output power from each channel of the AWG, the peak wavelength corresponding to the applied strain could be obtained. To enhance the accuracy of the AWG wavelength interrogation system, a chirped fiber Bragg grating with a 3-dB bandwith of 5.4 nm is utilized. The high-speed response of the proposed system is demonstrated by measuring a fast varying strain produced by the damped oscillation of a cantilever. An oscillation frequency of 17.8 Hz and a damping time constant of 0.96 second are obtained in this measurement.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.7
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• pp.796-804
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• 2010

It is important to use the comb type pilot allocation for the continuous channel and efficient processing. And DFT-spreading OFDM is used a lot to solve high PAPR problem of OFDM system. However, PAPR is increased again when comb type pilot is used to estimate channel characteristics. So, in this paper, we employ a new SLM method to DFT-spreading OFDM system to reduce increased high PAPR. And we suggest an effective method to transmit side information without additional bandwidth. Pilot and side information must be preserved from jamming or intentional interferences since those are very important in DFT spread OFDM system using SLM. So, in this paper, we like to analyze and simulate the performance of DFT spread OFDM system based on SLM against jamming signal. To remedy the vulnerable shortcomings of DFT spread OFDM about jamming or intentional interferences, we employ FH(Frequency Hopping) method and analyze system performance under the several jamming conditions such as MTJ(Multi Tone Jamming) and PBJ(Partial Band Jamming).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.121-121
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• 2010

ZnO is a promising material for the application of high efficiency light emitting diodes with short wavelength region for its large bandgap energy of 3.37 eV which is similar to GaN (3.39 eV) at room temperature. The large exciton binding energy of 60 meV in ZnO provide provides higher efficiency of emission for optoelectronic device applications. Several ZnO/ZnMgO multiple quantum well (MQW) structures have been grown on various substrates such as sapphire, GaN, Si, and so on. However, the achievement of high quality ZnO/ZnMgO MQW structures has been somehow limited by the use of lattice-mismatched substrates. Therefore, we propose the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on lattice-matched ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photo-generated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider width. From the power-dependent PL spectra, we observed no PL peak shift of MQW emission in both samples, indicating a negligible built-in electric field effect in the ZnO/$Zn_{0.9}Mg_{0.1}O$ MQWs grown on lattice-matched ZnO substrates.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.359-364
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• 2008

We have investigated optical and structural properties of $Al_{0.3}Ga_{0.7}N$/GaN and $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ heterostructures (HSs) grown by metal-organic chemical vapor deposition, by means of Hall measurement, high-resolution X-ray diffraction, and temperature- and excitation power-dependent photoluminescence (PL) spectroscopy. A strong GaN band edge emission and its longitudinal optical phonon replicas were observed for all the samples. At 10 K, a 2DEG-related PL peak located at ${\sim}\;3.445\;eV$ was observed for $Al_{0.3}Ga_{0.7}N$/GaN HS, while two 2DEG peaks at ${\sim}\;3.42$ and ${\sim}\;3.445\;eV$ were observed for $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS due to the additional $Al_{0.15}Ga_{0.85}N$ layers. Moreover, the emission intensity of the 2DEG peak was higher in $Al_{0.3}Ga_{0.7}N/GaN/Al_{0.15}Ga_{0.85}N/GaN$ HS than in $Al_{0.3}Ga_{0.7}N$/GaN HS probably due to an effective confinement of the photo-excited holes by the additional $Al_{0.15}Ga_{0.85}N$ layers. The 2DEG-related emission intensity decreased with increasing temperature and disappeared at temperatures above 150 K. To investigate the origin of the new 2DEG peaks, the energy-band structure for multiple AlGaN/GaN HSs were simulated and compared with the experimental data. As a result, the observed high- and low-energy peaks of 2DEG can be attributed to the spatially-separated 2DEG emissions formed at different AlGaN/GaN heterointerfaces.

• Journal of the Korean Society of Marine Environment & Safety
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• v.28 no.6
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• pp.882-889
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• 2022

In this study, to understand the factors influencing the flow change the Tsushima Warm Current (TWC), the correlation between the volume transport the TWC, El Niño Southern Oscillation (ENSO), and Pacific Decadal Oscillation (PDO) was analyzed. A calculation of the monthly volume transport of TWC for 25 years (1993-2018) revealed that the seasonal fluctuation cycle was the largest in summer and smallest in winter. Power spectrum analysis to determine the periodicity of the TWC volume transport, Oceanic Niño Undex (ONI), and PDO indicated that the TWC volume transport peaked at a one year cycle, but ONI and PDO showed no clear cycle. Further, to understand the correlation between the TWC transport volume and ONI and PDO, the coherence estimation method was used for analysis. The coherence of ONI and PDO had a high mutual contribution in long-period fluctuations of three years or more but had low mutual contribution in short-period fluctuations within one year. However, the coherence value between the two factors of the TWC volume transport and PDO was 0.7 in the 0.8-1.2 year cycle, which had a high mutual contribution. Meanwhile, the TWC volume transport and PDO have an inverse correlation between period I (1993-2002) and period III (2010-2018). When the TWC maximum transport volume (2.2 Sv or more) was high, the PDO index showed a negative value below -1.0, and the PDO index showed a positive value when the TWC maximum transport volume was (below 2.2 Sv). Therefore, using long-term PDO index data, changes in the TWC transport volume and water temperature in the East Sea coastal area could be predicted.

• Korean Journal of Environmental Agriculture
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• v.23 no.2
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• pp.111-116
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• 2004

Salt occlusion in Zeolite is a unique phenomenon that takes place only when the salt size is similar to the window size of host zeolite. $KCIO_3$-occluded Zeolite, as an environment-friendly oxidant, has a high potential for effective removal of various organic pollutants. This study was carried to investigate the characteristics and the removal kinetics of fungicide chlorothalonil by zeolite-$KCIO_3$ complex. About 10% of $KCIO_3$ was occluded in zeolite pores synthesized by salt-thermal method from fly ash, although the occlusion amount was relatively less compared to that of nitrate salts. By occlusion with $KCIO_3$, no remarkable changes were found in X-ray diffraction patterns of cancrinite, whereas some decrease of overall peak intensities was found with those of sodalite. Different releasing kinetics of $CIO_3^-$ ion were observed in distilled water and soil solution from zeolite-$KCIO_3$ complex. Two reactions, hydration and diffusion, seem to be related with the release of $KCIO_3$. Therefore, the release isotherm of $CIO_3^-$ ion well fitted to the power function model which indicate the release was made by hydration and diffusion. The removal of chlorothalonil by zeolite and $KCIO_3$ reached at reaction equilibrium within 6 hours by 18% and 47% respectively. However, the chlorothalonil removal by the zeolite-$KCIO_3$ complex increased slowly and steadily up to 92% in 96 hours. These findings suggested that zeolite-$KCIO_3$ complex could be applied for effective removal of organic contaminants in the soil and aqueous environment.