• Title/Summary/Keyword: High light stress

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Dislocation dynamics simulation on stability of high dense dislocation structure interacting with coarsening defects

  • Yamada, M.;Hasebe, T.;Tomita, Y.;Onizawa, T.
    • Interaction and multiscale mechanics
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    • v.1 no.4
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    • pp.437-448
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    • 2008
  • This paper examined the stability of high-dense dislocation substructures (HDDSs) associated with martensite laths in High Cr steels supposed to be used for FBR, based on a series of dislocation dynamics (DD) simulations. The DD simulations considered interactions of dislocations with impurity atoms and precipitates which substantially stabilize the structure. For simulating the dissociation processes, a point defect model is developed and implemented into a discrete DD code. Wall structure composed of high dense dislocations with and without small precipitates were artificially constructed in a simulation cell, and the stability/instability conditions of the walls were systematically investigated in the light of experimentally observed coarsening behavior of the precipitates, i.e., stress dependency of the coarsening rate and the effect of external stress. The effect of stress-dependent coarsening of the precipitates together with application of external stress on the subsequent behavior of initially stabilized dislocation structures was examined.

Factors associated with Intermittent and Light Smoking among Korean High School Students: Intermittent and Light Smoking among Korean Adolescents

  • Ra, Jin Suk;Kim, Hye Sun;Cho, Yoon Hee
    • Research in Community and Public Health Nursing
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    • v.29 no.1
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    • pp.33-40
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    • 2018
  • Purpose: The purpose of this study was to identify factors associated with intermittent and light smoking among Korean high school students. Methods: In this cross-sectional study, we employed secondary data from the 2015 Korea Youth Risk Behavior Web-Based Survey, and used the biopsychosocial model as a framework. The analysis was performed using the data of 2,851 high school students who smoked. We defined intermittent and light smoking as smoking on 1 to 29 days in a 30-day period and no more than 10 cigarettes per day. A logistic regression analysis using the complex samples procedure was conducted. Results: Among all the participants, 1,231 (43.2%) were intermittent and light smokers. Factors significantly predicting intermittent and light smoking were gender and grade (biological factors); subjective stress (psychological factor); and mother's smoking, sibling's smoking and academic achievement (sociocultural factors). Conclusion: In smoking cessation programs, health care providers both at school and in the community should consider the unique biological, psychological, and sociocultural characteristics of intermittent and light smoking behavior among high school students.

Acceleration Test for Package of High Power Phosphor Converted White Light Emitting Diodes (고출력 형광체변환 백색 LED 패키지의 가속시험)

  • Chan, Sung-Il;Yu, Yang-Gi;Jang, Joong-Soon
    • Journal of Applied Reliability
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    • v.10 no.2
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    • pp.137-148
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    • 2010
  • This study deals with the accelerated life test of high power phosphor converted white Light Emitting Diodes (High power LEDs). Samples were aged at $110^{\circ}C$/85% RH and $130^{\circ}C$/85% RH up to 900 hours under non-biased condition. The stress induced a luminous flux decay on LEDs in all the conditions. Aged devices exhibited modification of package silicon color from white to yellowish brown. The instability of the package contributes to the overall degradation of optical lens and structural degradations such as generating bubbles. The degradation mechanisms of lumen decay and reduction of spectrum intensity were ascribed to hygro-mechanical stress which results in package instabilities.

Water Physiology of Panax ginseng. 1. Habitat observation. cultural experience, weather factors and characteristics of root and leaf (인삼의 수분생리 1. 자생지관찰.재배 경험.기상요인과 근 및 엽의 특성)

  • Park, Hoon
    • Journal of Ginseng Research
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    • v.4 no.2
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    • pp.197-221
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    • 1980
  • Habitat observation, cultural experience of old and present plantation, weather factors in relation to crop stand and water physiology of root and leaf were reviewed. According to habitat observation ginseng plants love water but plate wit talus well grow at drained place with high moisture content in air and soil while ginseng plants were not found in dry or wet place. According to cultivation experience ginseng plants require abundant water in nursery and main field but most old planters believe that ginseng plaints are draught-loving thus require little water. The experience that rain especially in summer i.e unfavorable might be due to mechanical damage of leaves arid leaf disease infection, or severe leaf fall which is caused by high air temperature and coinsided with rain. According to crop stand observation in relation to weather factors abunsant water increased each root weight but decreased total yield indicating tile increase of missing root rate. Rain in summer was unfavorable too. Though rain in June was favorable for high yield general experience that cloudy day and rain were unfavorable might be due to low light intensity under shade. Present leading planters also do loot consider the importance of water in main field. Water content is higher in top than in root and highest in central portion of root and in stem of top. For seedling the heavier the weight of root is tile higher the water content while it reveries from two years old. Water potential of intact root appeared to be -2.89 bar suggesting high sensitivity to water environment. Under water stress water content severly decreased only in leaf. Water content of leaf appeared to be 78% for optimum, below 72% for functional damage and 68% for perm anent wilting. Transpiration or curs Principally through stomata in lower side of leaf thus contribution of upper side transpiration decreased with the increase of intensity. Transpiration is greater in the leaves grown under high light intensity. Thus water content is lower with high light inte nsity under field condition indicating that light is probable cause of water stress in field. Transpiration reached maximum at 10K1ut The decrease of transpiration at higher temperature seems to be due to the decrease of stomata aperture caused by water stress. Severe decrease of photosynthesis under water stress seems to be principally due to functional damage which is not caused by high temperature and Partly due to poor CO2 supply. Water potential of leaf appeared to be -16.8 bar suggesting weakness in draught tolerance. Ginseng leaves absorb water under high humidity. Water free space of leaf disc is %mailer than that of soybean leaf and water uptake appears to be more than two steps.

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Identification and Isolation of Differentially Expressed Gene in Response to Cold Stress in a Green Alga, Spirogyra varians (Zygnematales)

  • Han, Jong-Won;Yoon, Min-Chul;Lee, Key-Pyoung;Kim, Gwang-Hoon
    • ALGAE
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    • v.22 no.2
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    • pp.131-139
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    • 2007
  • The expression of genes responding to cold stress in a freshwater alga, Spirogyra varians, was studied by using differential expression gene (DEG) method. A gene strongly up-regulated in 4°C was isolated and designated as SVCR2 (Spirogyra varians cold regulated) gene. The cDNA encoding SVCR2 was cloned using λZAP cDNA library of Spirogyra varians. The deduced amino acid had a sequence similarity with trans-membrane protein in Arabidopsis thaliana (Q9M2D2, 52.7%). Northern blot analysis demonstrated that transcript level of SVCR2 increased about 10 fold under low temperature (4°C), compared with that cultured at warm (20°C) conditions. The expression of SVCR2 was also affected by light conditions. When the plants were exposed to high light (HL) (1200 μmol photon m–2 s–1), the expression of SVCR2 began within 2 hrs. This gene expression lasted for 4 hrs and decreased afterwards. Under the blue light (470 nm) condition, the expression of this gene was induced in same way as HL treatment, even under less than 100 μmol photon m–2 s–1. But red light (650 nm) and UV-A irradiation did not affect the expression of SVCR2.

The effect of negative bias stress stability in high mobility In-Ga-O TFTs

  • Jo, Kwang-Min;Sung, Sang-Yun;You, Jae-Lok;Kim, Se-Yun;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.154-154
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    • 2013
  • In this work, we investigated the characteristics and the effects of light on the negative gate bias stress stability (NBS) in high mobility polycrystalline IGO TFTs. IGO TFT showed a high drain current on/off ratio of ${\sim}10^9$, a field-effect mobility of $114cm^2/Vs$, a threshold voltage of -4V, and a subthresholdslpe(SS) of 0.28V/decade from log($I_{DS}$) vs $V_{GS}$. IGO TFTs showed large negative $V_{TH}$ shift(17V) at light power of $5mW/cm^2$ with negative gate bias stress of -10V for 10000seconds, at a fixed drain voltage ($V_{DS}$) of 0.5V.

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Dynamic Quasi-Elastic Light Scattering Measurement of Biological Tissue

  • Youn, Jong-In;Lim, Do-Hyung
    • Journal of Biomedical Engineering Research
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    • v.28 no.2
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    • pp.169-173
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    • 2007
  • During laser irradiation, mechanically deformed cartilage undergoes a temperature dependent phase transformation resulting in accelerated stress relaxation. Clinically, laser-assisted cartilage reshaping may be used to recreate the underlying cartilaginous framework in structures such as ear, larynx, trachea, and nose. Therefore, research and identification of the biophysical transformations in cartilage accompanying laser heating are valuable to identify critical laser dosimetry and phase transformation of cartilage for many clinical applications. quasi-elastic light scattering was investigated using Ho : YAG laser $(\lambda=2.12{\mu}m\;;\;t_p\sim450{\mu}s)$ and Nd:YAG Laser $(\lambda=1.32{\mu}m\;;\;t_p\sim700{\mu}s)$ for heating sources and He : Ne $(\lambda=632.8nm)$ laser, high-power diode pumped laser $(\lambda=532nm)$, and Ti : $Al_2O_3$ femtosecond laser $(\lambda=850nm)$ for light scattering sources. A spectrometer and infrared radiometric sensor were used to monitor the backscattered light spectrum and transient temperature changes from cartilage following laser irradiation. Analysis of the optical, thermal, and quasi-elastic light scattering properties may indicate internal dynamics of proteoglycan movement within the cartilage framework during laser irradiation.

EFFECTS OF INTERFACE CRACKS EMANATING FROM A CIRCULAR HOLE ON STRESS INTENSITY FACTORS IN BONDED DISSIMILAR MATERIALS

  • CHUNG N.-Y.;SONG C.-H
    • International Journal of Automotive Technology
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    • v.6 no.3
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    • pp.293-303
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    • 2005
  • Bonded dissimilar materials are being increasingly used in automobiles, aircraft, rolling stocks, electronic devices and engineering structures. Bonded dissimilar materials have several material advantages over homogeneous materials such as high strength, high reliability, light weight and vibration reduction. Due to their increased use it is necessary to understand how these materials behave under stress conditions. One important area is the analysis of the stress intensity factors for interface cracks emanating from circular holes in bonded dissimilar materials. In this study, the bonded scarf joint is selected for analysis using a model which has comprehensive mixed-mode components. The stress intensity factors were determined by using the boundary element method (BEM) on the interface cracks. Variations of scarf angles and crack lengths emanating from a centered circular hole and an edged semicircular hole in the Al/Epoxy bonded scarf joints of dissimilar materials are computed. From these results, the stress intensity factor calculations are verified. In addition, the relationship between scarf angle variation and the effect by crack length and holes are discussed.

A Thermal Stress Analysis for Suggested Shape of Al Hybrid Brake Disc (제안된 알루미늄 복합체 제동 디스크 형상의 열응력 해석)

  • Lim, Choong-Hwan;Goo, Byeong-Choon
    • Proceedings of the KSR Conference
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    • 2011.05a
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    • pp.283-288
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    • 2011
  • The high heat resistant material for brake disc is required for higher speed trains. Although Aluminum is very expensive, it which has high thermal conductivity and low density has been adapted to high performance light-weight brake disc. In this study, we carry out the thermal stress analysis for suggested shape of Al hybrid brake disc which was designed to meet the optimal point between a performance and economic side. And we compare the results from the analysis to results of conventional disc at the same braking speed. The result show that the temperature on braking surface of Al hybrid disc is lower than the temperature on conventional disc surface, whereas the maximum thermal stress is larger than stress on conventional disc.

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Comparative Analysis on Positive Bias Stress-Induced Instability under High VGS/Low VDS and Low VGS/High VDS in Amorphous InGaZnO Thin-Film Transistors

  • Kang, Hara;Jang, Jun Tae;Kim, Jonghwa;Choi, Sung-Jin;Kim, Dong Myong;Kim, Dae Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.5
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    • pp.519-525
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    • 2015
  • Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide (a-IGZO) bottom-gate thin-film transistors (TFTs) was investigated under high $V_{GS}$/low $V_{DS}$ and low $V_{GS}$/high $V_{DS}$ stress conditions through incorporating a forward/reverse $V_{GS}$ sweep and a low/high $V_{DS}$ read-out conditions. Our results showed that the electron trapping into the gate insulator dominantly occurs when high $V_{GS}$/low $V_{DS}$ stress is applied. On the other hand, when low $V_{GS}$/high $V_{DS}$ stress is applied, it was found that holes are uniformly trapped into the etch stopper and electrons are locally trapped into the gate insulator simultaneously. During a recovery after the high $V_{GS}$/low $V_{DS}$ stress, the trapped electrons were detrapped from the gate insulator. In the case of recovery after the low $V_{GS}$/high $V_{DS}$ stress, it was observed that the electrons in the gate insulator diffuse to a direction toward the source electrode and the holes were detrapped to out of the etch stopper. Also, we found that the potential profile in the a-IGZO bottom-gate TFT becomes complicatedly modulated during the positive $V_{GS}/V_{DS}$ stress and the recovery causing various threshold voltages and subthreshold swings under various read-out conditions, and this modulation needs to be fully considered in the design of oxide TFT-based active matrix organic light emitting diode display backplane.