• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.42.2-42.2
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• 2010

Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped $In_2O_3$ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:$Al_2O_3$ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at $900^{\circ}C$ in $N_2$ ambient for 1 min, tube-furnace annealing at $500^{\circ}C$ in $N_2:H_2$=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권4호
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.392-397
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• 2012

In the $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1})O_3$ (LCCC), which has been using as interconnector materials in SOFC, Al ions were substituted for Co because ionic radius of Al is similar to that of Co. Because of the almost identical ionic radius of Al and Co, the substitution was not thought to be affect the tolerance factor of LCCC, and the densification behavior, high temperature electrical conductivity and thermal expansion coefficient were examined as a function of Al concentration. In the cases of the x= 0 and x= 0.02 in $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1-x}Al_x)O_3$ (x= 0~0.1), the samples showed the relative densities above ${\geq}95%$ when those were sintered at ${\geq}1,350^{\circ}C$. In the case of the $x{\geq}0.06$ the sintered density deteriorated greatly at lower sintering temperatures. High temperature electrical conductivity of the samples decreased as the content of Al increased. Since the valence state of Al ion is unchangeable, while Cr or Co ions contribute to the electrical conduction by changing those valence states, Al substitution resulted in the decreased electrical conductivity. Al doping of LCCC was an effective way of decreasing the thermal expansion coefficient (TEC).

• 한국결정성장학회지
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• 제10권3호
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• pp.239-244
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• 2000

$LiMn_2$$O_4$Spine에 Li 과량 및 Mn 대신 Co를 일부 치환시킨 $_{1+x}$ Co$_{y}$ Mn$_{2-y}$ $O_4$(0$\leq$x$\leq$0.2,y=0,1/9,1/6) spinel에 대한 합성온도 결정, 상의 생성 등 고온 상평형에 대해 연구하였다. 고온 합성에 따른 제 2상의 생성을 방지하기 위해 저온합성이 가능한 습식화학적 합성법중 하나인 oxalate 침전법을 사용하여 $600^{\circ}C$ 이하에서 단일상의 spinel로 합성하였다. 이렇게 합성된 분말에 대해 TG-DTA분석 및 고온에서 급냉한 분말에 대한 XRD분석을 통해 질량(산소)의 증감에 연관된 가역적인 상전이 온도인 $T_1$, $T_2$및 $T_{2'}$ 들을 확인하였으며, 첨가된 Li의 양과 치환된 Co의 양에 따른 격자상수, 상전이 온도의 변화, 고온상의 안정성 등에 대해 연구하였다. 본 연구를 통해 Li$_{1+x}$ Co$_{y}$ Mn$_{2-y}$ $O_4$spinel의 합성온도 및 냉각속도 둥 합성과정 결정에 필요한 결과들을 얻을 수 있었다.

• 한국결정성장학회지
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• 제27권6호
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• pp.309-312
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• 2017

세리아 분말은 Ce 이온의 산화, 환원 반응을 통한 산소저장능력(OSC)이 뛰어나 배기가스를 정화하는 자동차의 삼원촉매에 대표적인 재료로 사용된다. 그러나 일반적으로 세리아는 고온에서 열적 안정성이 떨어지기 때문에 금속이온을 도핑시켜 열적 안정성을 향상시켜 사용한다. 따라서 본 연구에서는 Zr 이온을 세리아 분말에 도핑시켰고, 도핑으로 인해 입자크기가 감소하면서 비 표면적 증가로 인해 그 특성은 더욱 향상되었다. 그리고 본 연구에서는 세리아 및 Zr 이온이 도핑된 세리아를 나노 크기로 합성하기 위해 수열반응법을 이용하여 합성하였다. 수열합성 조건은 pH = 11, 반응온도는 $200^{\circ}C$에서 6시간 동안 합성하였다. 수열합성법을 이용하여 합성된 세리아 및 Zr 도핑 $CeO_2$ 나노 분말의 평균 입자 크기는 약 20 nm 이하였다. 합성된 세리아 나노분말의 비표면적은 $52.03m^2/g$, Zr 이온이 도핑된 $CeO_2$ 분말의 비 표면적 $132.27m^2/g$이었다.

• 한국방사선학회논문지
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• 제9권2호
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• pp.67-72
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• 2015

진단방사선 분야에서는 진단 최적화를 위하여 자동노출제어장치의 활용이 국제적으로 권고되고 있다. 하지만, 기존의 상용화된 광도전체 센서는 제작 공정의 복잡하고 장시간 방사선에 노출될 경우 다양한 성능 저하가 발생하는 문제점이 있다. 이에 본 연구에서는 X-ray 흡수율이 높으면서도 제작이 용이한 장점을 가진 광도전체 기반 센서의 AEC 적용 가능성을 평가하고자 한다. 실험결과, SNR 증가를 통하여 우수한 검출 효율을 가지는 센서의 제작가능성을 확인하였고, 정확한 턴-오프가 가능할 것으로 사료된다. 또한 잠상 영상 및 투과율 실험 결과, 광도전체에 의한 Ghost effect가 나타나지 않음을 확인하였으며, PbO를 제외한 광도전체의 경우 80% - 90%의 우수한 투과율을 확인하였다. 그러므로 상용화된 기존 상품에 대비하여 도핑농도 변화에 따른 성능 저하 및 기계적 안정성이 뛰어나며 제작이 용이한 광도전체 기반의 센서는 AEC 센서로 적용이 가능할 것으로 기대된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.52-52
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• 2008

The positive temperature coefficient of resistivity (PTCR) effect in (1-x)$BaTiO_3$ - $x(Bi_{0.5}K_{0.5})TiO_3$ doped with $Nb_2O_5$ was investigated. $(Bi_{1/2}K_{1/2})TiO_3$ (BKT) is more environment-friendly than $PbTiO_3$ in order to use in PTC thermistors. The incorporation of 1 mol% BKT to $BaTiO_3$ increased the Curie temperature (Tc) to $148^{\circ}C$. Doping of $Nb_2O_5$ to $Ba_{0.99}(Bi_{0.5}K_{0.5})_{0.01}TiO_3$ (BaBKT) ceramic has enhanced its PTCR effects. For the sample containing 0.025 mol% $Nb_2O_5$, it showed good PTCR properties; low resistivity at room temperature (${\rho}_r$) of 30 $\Omega{\cdot}cm$, a high PTCR intensity of approximately $3.3\times10^3$, implying the ratio of maximum resistivity to minimum resistivity (${\rho}_{max}/{\rho}_{min}$) in the measured temperature range, and a large resistivity temperature factor (a) of 13.7%/$^{\circ}C$ along with a high Curie temperature (Tc) of $167^{\circ}C$. In addition, the cooling rate of the samples during the sintering process had an influence on their PTCR behavior. All the samples showed the best ${\rho}_{max}/{\rho}_{min}$ ratio when they have cooled down at a rate of $600^{\circ}C$/min.

• 한국재료학회지
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• 제19권4호
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• pp.198-202
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• 2009

For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of $(1\;-\;x)Pb(Zr_{0.515}Ti_{0.485})O_3$ - $xPb(Sb_{1/2}Nb_{1/2})O_3$ + 0.5 wt% $MnO_2$ [(1 - x)PZT - xPSN + $MnO_2$] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at $1250^{\circ}C$ for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to $1.3{\mu}m$ by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+$MnO_2$ ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + $MnO_2$ system, exhibited good piezoelectric properties: a piezoelectric constant ($d_{33}$) of 325 pC/N, an electromechanical coupling factor ($k_p$) of 70.8%, and a mechanical quality factor ($Q_m$) of 1779. The specimens with a relatively high curie temperature ($T_c$) of $305^{\circ}C$ also showed a significantly high dielectric constant (${\varepsilon}_r$) value of 1109. Therefore, the 0.96PZT - 0.04PSN + $MnO_2$ ceramics are suitable for use in ultrasonic vibrators.

• The Korean Journal of Physiology and Pharmacology
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• 제2권3호
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• pp.323-330
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• 1998

Tetrahydroisoquinoline (THI) alkaloids can be considered as cyclized derivatives of simple phenylethylamines. Many of them, especially with 6,7-disubstitution, demonstrate a relatively high affinity for catecholamines. Present study examines the pharmacological action of limited series of THI, using rats' isolated atria and aorta. In addition, a $[^3H]$ prazosin displacement binding study with THI compounds was performed, using rat brain homogenates to investigate whether these probes have ?${\alpha}$-adrenoceptor affinity. We also compared the vascular relaxation potency of these probes with dobutamine. YS 49, YS 51, higenamine and dobutamine, concentration-dependently, relaxed endothelium-denuded rat thoracic aorta precontracted with phenylephrine (PE, 0.1 ${\mu}M$) in which $pEC_{50}$ were $5.56{\pm}0.32$ and $5.55{\pm}0.21$, $5.99{\pm}1.16$ and $5.57{\pm}0.34$, respectively. These probes except higenamine also relaxed KCl (65.4 mM)-contracted aorta. In isolated rat atria, all THIs and dobutamine increased heart rate and contractile force. In the presence of propranolol, the concentration response curves of YS 49 and YS 51 shifted to the right and resulted in $pA_2$ values of $8.07{\pm}0.84$ and $7.93{\pm}0.11$, respectively. The slope of each compound was not deviated from unity, indicating that these chemicals are highly competitive at the cardiac ?${\beta}-adrenoceptors$. YS 49, YS 51, and higenamine showed ?${\alpha)-adrenoceptor$ affinity in rat brain, in which the dissociation constant $(K_i)$ was 2.75, 2.81, and 1.02 ${\mu}M$, respectively. It is concluded, therefore, that THI alkaloids have weak affinity to ${\alpha)_1-adrenoceptor$ in rat aorta and brain, respectively, while these probes show relatively high affinity for cardiac ${\beta}-adrenoceptors$. Thus, these chemicals may be useful in the treatment of congestive heart failure.

• 방사선산업학회지
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• 제6권1호
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• pp.31-40
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• 2012

There are two methods to fabricate the readout electronic to a large-area CMOS image sensor (LACIS). One is to design and manufacture the sensor part and signal processing electronics in a single chip and the other is to integrate both parts with bump bonding or wire bonding after manufacturing both parts separately. The latter method has an advantage of the high yield because the optimized and specialized fabrication process can be chosen in designing and manufacturing each part. In this paper, LACIS chip, that is optimized design for the latter method of fabrication, is presented. The LACIS chip consists of a 3-TR pixel photodiode array, row driver (or called as a gate driver) circuit, and bonding pads to the external readout ICs. Among 4 types of the photodiode structure available in a standard CMOS process, $N_{photo}/P_{epi}$ type photodiode showed the highest quantum efficiency in the simulation study, though it requires one additional mask to control the doping concentration of $N_{photo}$ layer. The optimized channel widths and lengths of 3 pixel transistors are also determined by simulation. The select transistor is not significantly affected by channel length and width. But source follower transistor is strongly influenced by length and width. In row driver, to reduce signal time delay by high capacitance at output node, three stage inverter drivers are used. And channel width of the inverter driver increases gradually in each step. The sensor has very long metal wire that is about 170 mm. The repeater consisted of inverters is applied proper amount of pixel rows. It can help to reduce the long metal-line delay.