• 대한전자공학회논문지
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• 제18권4호
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• pp.49-61
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• 1981

N+P, N+PP+ 형 태양전지를 제조하여 얻은 실험자료들을 근거로 실리콘 접합형 태양전지에 일반적으로 적용할 수 있는 컴퓨터 모의 실험 프로그램을 개발하고, 이의 유용성을 확인하였다. 이 모의 실험 프로그램은 N+P, P+N, N+PP+, P+NN+형의 실리콘 태양전지에 적용할 수 있는 것으로, 입사광은 AMI, 등강도 광원, 인공조명으로 많이 사용되는 GE -ELH 광원이고, AR코팅은 Si3N4형과 투과도가 파장에 관계없는 일정형 2종류가 있으며, 프로그램에서 이들 전지의 구조, 광원, AR 코팅 종류에 대한 파장 특성분포도 쉽게 변화시킬 수 있도록 되어 있다. 이 모의실험의 결과들을 토대로 N+와 P 영역에서의 평균도오핑농도와 전지의 두께, AMI 스펙트럼에 대한 집광도, 앞면 접합깊이에 대하여 효율이 최대가 되는 최적치들을 구하였으며, 앞면의 표면 재결합 속도, 접합부에서의 캐리어의 유효 수명, 누설저항에 대하여는 허용 한계치로, 기타 효율변화인자로서 동작온도 직렬저항과 전기장의 세기에 대하여는 효율의 변화율로서 파라미터들이 효율에 미치는 영향들을 분석하였다.

• 전기학회논문지
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• 제56권9호
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• pp.1609-1613
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• 2007

(Ba,Sr,Ca)$TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-, Sr- and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectirc properties were investigated for various $Dy_2O_3$ doping contents. As a result of thermal analysis, the exothermic peak was observed at around 670^{\circ}C $ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size of the specimens decreased with increasing amount of $Dy_2O_3$. The average grain size and thickness of the BSCT specimens doped with 0.1 mol% $Dy_2O_3$ were approximately $1.9{\mu}m$ and $70{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss increased with increasing amount of $Dy_2O_3$, the values of the BSCT thick films doped with 0.1 mol% $Dy_2O_3$ were 3697 and 0.4% at 1 kHz, respectively. The leakage current densities in all BSCT thick films were less than $10^{-9}A/cm^2$ at the applied electric field range of 0-20 kV/cm.

• 센서학회지
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• 제15권3호
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• pp.216-221
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• 2006

ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.

• 공업화학
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• 제7권5호
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• pp.992-998
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• 1996

Citrate process로 제조한 $La_{1-x}Ca_xCoO_3$에서 Ca이 20mole% doping된 perovskite oxide가 산소환원반응에 대해 가장 높은 전류밀도와 specific activity를 보여주었으며 cyclic voltammogram에서 carbon만으로 제조된 전극에서보다 carbon과 Perovskite oxide를 혼합한 전극에서 높은 산소흡착/탈착전류를 보였다. 입자크기분포와 소결효과에 의해 $900^{\circ}C$, 5시간 공기중에서 소결한 $La_{0.8}Ca_{0.2}CoO_3$가 산소환원반응에 대한 전기화학적 촉매특성이 우수하였다.

• 한국식품영양학회지
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• 제21권1호
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• pp.35-42
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• 2008

To develop physiological functionality of Omija extracted with water was evaluated on antioxidative activity. Omija, high acid material with pH 3.6, contain $57.5{\pm}1.03%$ of moisture, and $18.8{\pm}0.12%$ of crude fat. This material have $12.6{\pm}0.04%$ of carbohydrate and $11.1{\pm}0.07%$ of crude protein as well, but ash and crude protein contents were found less than 10%. 10 mineral contents were also found, too; K and Ca showed the highest level, then Al, Mg, Na and Mn were followed. In composition amino acid contents, glutamic acid took the largest portion, $131.7{\pm}1.3$ mg/100 g, aspartic acid $51.5{\pm}0.6%$, and other composition amino acid under 50%. In case of free sugar contents, 7 types were found. Most of them were glucose and fructose. Total phenolic compounds showed the highest level, $2,862.6{\pm}31.7$ mg/100 g. $197.8{\pm}14.6$ mg/100 g of flavonoid and $225.6{\pm}18.2$ mg/100 g were included. In terms of electron donating ability, radical scavenging ability activated as the amount of Omija extract increased. In particular, Omija extract in 1,000 ${\mu}g/m{\ell}$ demonstrated almost similar electron donating ability, $72.4{\pm}0.21%$, to BHT. It was also found that antioxidant activities of electron donating ability, SOD-like ability, hydroxyl radical scavenging ability and nitrite scavenging ability were highly promoted as Omija extract concentration increased. The nitrite scavenging ability was significant when the extract belonged to strong acid region and doping concentrations increased.

• 한국정밀공학회지
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• 제28권1호
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• pp.19-23
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• 2011

Recently, focused ion beam (FIB) applications have been investigated for the modification of VLSI circuit, the MEMS processing, and the localized ion doping, A multi aperture FIB system has been introduced as the demands of FIB applications for high speed and large area processing increase. A liquid metal ion source has problems, a large angular divergence and a metal contamination into a substrate. In this study, a gas ion source was introduced to replace a liquid metal ion source. The gas ion source generated inductively coupled plasma (ICP) in a quartz tube (diameter: 45 mm). Ar gas fed into the quartz was ionized by a 2 turned radio frequency antenna. The Ar ions were extracted by 2 extraction grids. The maximum extraction voltage was 10 kV. A numerical simulation was used to optimize the design of extraction grids and to predict an ion trajectory. As a result, the maximum ion current density was 38 $mA/cm^2$ and the spread of ion energy was 1.6 % for the extraction voltage.

• 한국진공학회지
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• 제14권1호
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• pp.29-34
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• 2005

실리콘-게르마늄 바이시모스(SiGe BiCMOS) 소자 제작시 발생하는 실리콘-게르마늄 이종접합 바이폴라 트랜지스터(SiGe HBT) 열화 현상에 대하여 고찰하였다. 독립적으로 제작된 소자에 비해 SiGe BiCMOS 공정에서의 SiGe HBT소자는 얼리 전압(Early voltage), 콜렉터-에미터 항복전압 및 전류이득등의 DC특성이 열화되고 상당한 크기의 베이스 누설전류가 존재한다는 것을 알 수 있었다. 또한 AC 특성인 차단주파수(f/sub T/) 및 최대 진동주파수(f/sub max/)도 1/2이하로 현저하게 저하되는 것을 확인하였다. 이는 고온의 소오스-드레인 열처리에 의한 붕소의 농도분포 변화가 에미터-베이스 및 콜렉터-베이스 접합 위치에 변화를 주고, 결국 실리콘-게르마늄 내에서의 접합 형성이 이루어지지 않아 전류 이득이 감소하고 기생 장벽이 형성되어서 발생한 현상이다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.43.2-43.2
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• 2011

Single-walled carbon nanotubes (SWCNT) are transparent in the visible and show conductivity comparable to copper, and are environmentally stable. SWCNT films have high flexibility, conductivity and transparency approaching that indium tin oxide (ITO), and can be prepared inexpensively without vacuum equipment. Transparent conducting Films (TCF) of SWCNTs has the potential to replace conventional transparent conducting oxides (TCO, e.g. ITO) in a wide variety of optoelectronic devices, energy conversion and photovoltaic industry. However, the sheet resistance of SWCNT films is still higher than ITO films. A decreased in the resistivity of SWCNT-TCFs would be beneficial for such an application. We fabricated SWCNT sheet with $KAuBr_4$ on PET substrate. Arc-discharge SWCNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWCNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with AuBr4-, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. $HNO_3$ treated SWCNT films with Au nano-particles have the lowest 61 ${\Omega}$/< sheet resistance in the 80% transmittance. Sheet resistance was decreased due to the increase of the hole concentration at the washed SWCNT surface by p-type doping of $AuBr_4{^-}$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권3호
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• pp.203-212
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• 2010

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.135-135
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• 2003

The fast evolution in the fold of optical communication systems demands powerful optical information treatment. These functions can be performed by integrated optical systems. A key component of such systems is erbium doped waveguide amplifier(EDWA). The intra 4f radiative transition of Er at 1.5 $\mu\textrm{m}$ is particularly interesting because this wavelength is standard in optical telecommunications. The fabrication of waveguide amplifier for integrated optics using sol-gel process has received an increasing attention. Potential advantage of lower cost by less capital equipment and easy processing makes this process an attractive alternatives to conventional technologies like flame hydrolysis deposition, ion exchange and chemical vapor deposition, etc. In addition, sol-gel process has been found to be extremely suitable for the control of composition and refractive index related directly with optical properties. The main drawback of such an amplifier with respect to the EDWA is the need for a much higher Er3+ concentration to compensate for the smaller interaction length. However, the high doping of Er might be resulted in the non-radiative relaxation by clustering of Er ions End co-operative upconversion. In order to solve this problem, we investigate the possibility of avoiding short Er-Er distances by encapsulation of Er3+ ions in hosts such as organic-inorganic hybrid materials. For inorganic-organic hybrid sols, methacryloxypropyltrimethoxysilane (MPTS), zirconyl chloride octahydrate and erbium(III) chloride hexahydrate were used as starting materials, followed by conventional sol-gel process. It was observed by TEM that nano sols having core/shell toplology were formed, depending on the mole ratio of Zr/Er. The surface roughness for the coatings on Si substrate was investigated by AFM as a function of Zr/Er ratio. The local environment and vibrational Properties of Er3+ ions were studied using Near-IR, FT-IR, and UV/Vis spectroscopy. Nano hybrid coatings derived from polymer and Er doped encapsulation Eave the good luminescence at 1.55$\mu\textrm{m}$.