• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.54.1-54.1
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• 2007

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.27.1-27
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• 2003

• 한국세라믹학회지
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• 제54권4호
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• pp.323-330
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• 2017

To understand the defect chemistry of multiferroic $BiFeO_3-based$ systems, we synthesized nonstoichiometric $Bi_{1+x}FeO_{3{\pm}{\delta}}$ ceramics by conventional solid-state reaction method and studied their structural, dielectric and high-temperature charge transport properties. Incorporation of an excess amount of $Bi_2O_3$ lowered the Bi deficiency in $BiFeO_3$. Polarization versus electric field (P-E) hysteresis loop and dielectric properties were found to be improved by the $Bi_2O_3$ addition. To better understand the defect effects on the multiferroic properties, the high temperature equilibrium electrical conductivity was measured under various oxygen partial pressures ($pO_2{^{\prime}}s$). The charge transport behavior was also examined through thermopower measurement. It was found that the oxygen vacancies contribute to high ionic conduction, showing $pO_2$ independency, and the electronic carrier is electron (n-type) in air and Ar gas atmospheres.

• 한국분말재료학회지
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• 제20권2호
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• pp.125-128
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• 2013

Magnetic and dielectric properties of rubber composites are controlled by using two kinds of high-permeability metal particles with different electrical conductivity (Sendust, Permalloy), and their effect on microwave absorbance has been investigated, focusing on the quasi-microwave frequency band (0.8-2 GHz). Noise absorbing sheets are composite materials of magnetic flake particles of high aspect ratio dispersed in polymer matrix with various filler amount of 80-90 wt.%. The frequency dispersion and magnitude of complex permeability is almost the same for Sendust and Permalloy composite specimens. However, the complex permittivity of the Permalloy composite (${{\varepsilon}_r}^{\prime}{\simeq}250$, ${{\varepsilon}_r}^{{\prime}{\prime}}{\simeq}50$) is much greater than that of Sendust composite (${{\varepsilon}_r}^{\prime}{\simeq}70$, ${{\varepsilon}_r}^{{\prime}{\prime}}{\simeq}0$). Due to the large dielectric permittivity of Permalloy composite, the absorbing band is shifted to lower frequency region. However, the investigation of impedance matching reveals that the magnetic permeability is still small to satisfy the zero-reflected condition at the quasi-microwave frequency band, resulting in a small microwave absorbance lower than 10 dB.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.242-242
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• 2007

To verify the applicability of High Temperature Superconducting (HTS) cable system into the real grid, the HTS cable system with the specification of 22.9 kV, 1250 A, 100 m long was installed in the second quarter of 2006, and the long term field test has been in progress at the KEPCO's Gochang power testing yard. Apart from the conventional power cable, HTS cable system requires sufficient thermo-mechanical strength to endure a large temperature difference. To date, the KEPCO HTS cable system was cooled down and warmed to the room temperature several times to investigate the influence of thermal cycles experimentally. Dielectric properties, critical current dependance and heat losses were evaluated at each step of thermal cycle. The test results showed that thermal cycle did not induce the degradation of dielectric properties, and the critical current decreased to 5 % of the initial value.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.572-574
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• 1993

In order to obtain superior breakdown properties of Epoxy/$SiO_2$ composite materials at room and high temperature, the simultaneous interpenetrating polymer networks(SIN) is introduced into the Epoxy resin. As a result, it is observed that dielectric breakdown strength tends to increase according to the following order ; Epoxy/$SiO_2$ specimens, specimens treated with coupling agent and SIN introduced specimens which have stable temperature characteristics at room and high temperature. For introducing SIN Epoxy/$SiO_2$ composite material, rise of glass transition temperature and suppression of defects in its internal structure is achieved. This in turn improves the dielectric breakdown strength and the heat proof property of Epoxy/$SiO_2$ composite materials.

• 한국결정성장학회지
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• 제9권6호
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• pp.606-611
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• 1999

Kaolin으로부터 합성한 mullite에 brosilicate계 유리를 혼합하여 기판재료로 적합한 저유전성 Mullite/Glass 복합체를 제조하였다. 유리를 첨가함으로써 액상소결에 의한 Cu, Au, Ag-Pd 등의 배선 사용이 가능한 저온에서 치밀한 소결체를 얻을수 있었다. 기판의 물성저하의 원이 되는 유리의 결정화는 나타나지 않았다. 소결온도 950~$1100^{\circ}C$의 범위에서 유리 50 wt%의 조성의 복합체에서 유전상수 약 5.2~5.4 (at 1 MHz), 열팽창을 5.3~$5.7{\times}10^{-6}{\cdot}^0C^{-1}$, , 꺾임강도 130 MPa로 high-performed substrate로서 적합한 특성을 나타내었다.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.1-4
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• 2015

(111)-oriented and random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/$TiO_x$/$SiO_2$/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (${\eta}=75%$, E = 560 kV/cm) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (${\Delta}T=45.3K$ and ${\Delta}S=46.9JK^{-1}kg^{-1}$ at $598kVcm^{-1}$) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.342-347
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• 2007

$Bi_6Mg_2Nb_4O_{21}(BMN)$ thin films were deposited at various substrates by sputtering system for embedded capacitor applications. BMN thin films deposited at room temperature are manufactured as MIM(Metal/Insulator/Metal) structures. Dielectric properties and leakage current density were investigated as a function of various substrates and thickness of BMN thin films. Leakage current density of BMN thin films deposited on CCL(Copper Clad Laminates) showed relatively high value ($1{\times}10^{-3}A/cm^2$) at an applied field of 300 kV/cm on substrates, possibly due to relatively high value of roughness(rms $50{\AA}$) of CCL substrates. 100 nm-thick BMN thin films deposited on Cu/Ti/Si substrates showed the capacitance density of $300 nF/cm^2$, a dielectric constant of 32, a dielectric loss of 2 % at 100 kHz and the leakage current density of $1{\times}10^{-6}A/cm^2$ at an applied field of 300 kV/cm. BMN capacitors are expected to be promising candidates as embedded capacitors for printed circuit board(PCB).

• 한국진공학회지
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• 제7권s1호
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• pp.106-117
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• 1998

Fluorocarbonated-SiO2 films were deposited on p-type Si(100) substrate using FSi$(OC_2H_5)_3$ (FTES), and $O_2$ mixture gases by a helicon plasms source. High density $O_2$/FTES/Ar plasma of ~$10^{12} \textrm{cm}^{-3}$ is obtained at low pressure (<3mTorr) with RF power above 900 W in the helicon plasma source. Optical emission spectroscopy (OES) is used to study the relation between the relative densities of the radicals and the film properties. The FTES and $O_2$ gases are greatly dissociated at the helicon mode that is launched at the above threshold plasma density. FTIR and XPS spectra shows that the film has Si-F, and C-F bonds during the formation process of the film which may lower the dielectric constant greatly. The relative dielectric constant, leakage current density, and dielectric breakdown voltage are about 2.8, $8\times10^{-9}\textrm{A/cm}^2$, and > 12 MV/cm, respectively.