• Transactions on Electrical and Electronic Materials
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• 제5권1호
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• pp.29-33
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• 2004

The materials showing high structure dispersity have been developed on the quartz base by mechano-chemical technology. Depending on the processing conditions and subsequent applications, the materials produced by mechano-chemical reaction (MCR) showed concurrently magnetic, dielectric and electrical properties. The obtained magnetic-electrical powders classified by aggregate complex of their features as segneto-magnetics, contained a dielectric material as a carrying nucleus, particularly the quartz on that surface one or more layers of different compounds was synthesized having thickness up to 10∼50 nm and showing magnetic properties and etc.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.326-326
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• 2010

The dielectric properties of continuous composition spreaded (CCS) $BaTiO_3-SrTiO_3$ (BST) thin filmsgrown at room temperature and annealed at different temperature ($350^{\circ}C$ and $550^{\circ}C$) were investigated. Moreover, electrical properties (leakage current and breakdown voltage) of CCS BST thin films were also investigated. The aluminum top-electrode, sized by $200{\times}200\;{\mu}m2$ and apart from each other by $300\;{\mu}m$, were deposited on the CCS BST thin films by the DC sputtering system. The dielectric properties of the CCS BST thin films were significantly influenced depending on the distance from $BaTiO_3$ and $SrTiO_3$ targets which was attributed to the $BaTiO_3-SrTiO_3$ composition ratio. The maps of dielectric constants and loss tangents were plotted via $1500\;{\mu}m$ - step measuring. The specific points showing the dielectric constant (k: ~300) and loss tangent (tand: ~0.008) at 1 MHz were found.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권7호
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• pp.344-348
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• 2006

The effect of x on microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics for microwave components were investigated. All spcecimens prepared by the conventional mixed oxied method and sintered at $1450^{\circ}C$. Microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-xTiO_2$ ceramics were influenced by $MgTi_2O_5$ phase. Also the microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were dominated with an addition of $CaTiO_3\;and\;SrTiO_3$. The dielectric constant $(\varepsilon_r)$, quality factor $(Q{\times}f_r)$ and temperature coefficient of the resonant frequency $(TCRF,\;\tau_f)$ of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were $12.96\sim70.98,\;5,132\sim186,410GHZ$ and $-35.82\sim+75.96ppm/^{\circ}C$, respectively, and depend on x and addition materials.

• 한국표면공학회지
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• 제54권4호
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• pp.178-183
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• 2021

The temperature and frequency dependence of the dielectric constant of the BaTiO₃ substituted with two types of donor dopants, Nb⁵⁺ and Ta⁵⁺, respectively, were compared and analyzed. Dielectric specimens of four specific compositions, Ba_0.95Nb_0.05TiO₃, Ba_0.90Nb_0.10TiO₃, Ba_0.95Ta_0.05TiO₃, and Ba_0.90Ta_0.010TiO₃ were prepared by calcining at 1100 ℃ and sintering at 1300 ℃ to have a perovskite structure to measure capacitance. XRD and SEM analysis were used to observe the structure, with particular focus on the integration into the Nb⁵⁺ and Ta⁵⁺ substituted BaTiO₃ crystal lattice. X-ray diffraction peaks in the (200) and (002) planes were observed between 45.10° and 45.45° of the BaTiO₃ solid solution substituted with different fractions of Nb⁵⁺ and Ta⁵⁺. The dielectric properties were analyzed and the relationship between the properties and structure of the substituted BaTiO₃ was established. The fine particles and high density of the substituted BaTiO₃ were maintained like pure BaTiO₃, and in particular, a shift toward the low temperature side of the phase transition temperature range was clearly found, unlike pure BaTiO₃. In addition, the phase transition at a temperature higher than the Curie temperature relatively satisfies the modified Curie-Weiss law.

• 대한전기학회논문지
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• 제37권12호
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• pp.872-878
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• 1988

During the past few years, a great deal of attention has been directed to the application of superconductivity to the electrical systems such as superconducting power transmission lines, superconducting magnet energy storage and so on. Yet in order to develop the practical model of these electrical equiqments utilizing suprconductivety and other phenomena at cryogenic temperautre, it is necessary to know the dielectric behaviour of insulating materials at cryogenic temperature in view of reliability, safety and economy of these machines. Investigation of dielectric properties of cryogenic liquids is very important due to the dual role of those as the dielectric and cooling medium. In this study, we investigated results measured over several kinds of dielectric characteristics of liquid nitrogen taking into consideration for application of high Tc superconductor. Dependence of breakdown voltage of gap width, polarity and pressure is reported in this paper and time delay characteristics of breakdown is also the subject of this discussion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.719-722
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• 2003

Ferroelectric $Pb(Zr_{1-x}Ti_x)O_3$ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and dry etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1 -20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.

• 동굴
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• 제78호
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• pp.9-15
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• 2007

The materials showing high structure dispersion with functional properties were developed on the quartz base and those were obtained by mechano-chemical reaction technology. Depending on the processing conditions and subsequent applications the materials produced by mechano-chemical reaction show concurrently magnetic, dielectric and electrical properties. The obtained magnetic-electrical powders classified by aggregate complex of their features as segnetomagnetics, containing a dielectric material as a carrying nucleus, particularly the quartz on that surface one or more layers of different compounds were synthesized having thickness up to 1050nm showing magnetic, electrical properties and others. The similarity of the structure of surface layers of quartz particles subjected to mechano-chemical processing and nano-structure cluspol (clusters in a polymer matrics) material was alsoconfirmed by the fact that the characteristics of ferromagnetic quartz of insulating nano-composite powder were changed with time, after its preparing process was completed.

• 대한전자공학회논문지SD
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• 제38권11호
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• pp.765-770
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• 2001

고온 급속 열처리시킨 LiNbO₃/AIN/Si(100) 구조를 이용하여 MFIS 소자를 제작하고, 비휘발성 메모리 동작 가능성을 확인하였다. 고유전율 AIN 박막 위에 Pt 전극을 증착시켜 제작한 MIS 구조에서 측정한 1MHz C-V 특성곡선에서는 히스테리시스가 전혀 없고 양호한 계면특성을 보였으며, 축적 영역으로부터 산출한 비유전율 값은 약 8 이었다. Pt/LiNbO₃/AIN/Si(100) 구조에서 측정한 1MHz C-V 특성의 축적영역에서 산출한 LiNbO₃ 박막의 비유전율 값은 약 23 이었으며, ±5 V의 바이어스 범위 내에서의 메모리 윈도우는 약 1.2 V이었다. 이 MFIS 구조에서의 게이트 누설전류밀도는 ±500 kV/cm의 전계 범위 내에서 10/sup -9/ A/㎠ 범위를 유지하였다. 500 kHz의 바이폴러 펄스를 인가하면서 측정한 피로특성은 10/sup 11/ cycle 까지 초기값을 거의 유지하는 우수한 특성을 보였다.

• 한국세라믹학회지
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• 제55권2호
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• pp.166-173
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• 2018

In order to investigate the effect of Mn on the dielectric and piezoelectric properties of PMN-PT [$Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$], four different types of 71PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: (1) Undoped single crystals, (2) undoped polycrystalline ceramics, (3) Mn-doped single crystals, and (4) Mn-doped polycrystalline ceramics. In the case of single crystals, the addition of 0.5 mol% Mn to PMN-PT decreased the dielectric constant ($K_3{^T}$), piezoelectric charge constant ($d_{33}$), and dielectric loss (tan ${\delta}$) by about 50%, but increased the coercive electric field ($E_C$) by 50% and the electromechanical quality factor ($Q_m$) by 500%, respectively. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$) and thus specimens changed from piezoelectrically soft-type to piezoelectrically hard-type. This Mn effect was more significant in single crystals than in ceramics. These results demonstrate that Mn-doped 71PMN-29PT single crystals, because they are piezoelectrically hard and simultaneously have high piezoelectric and electromechanical properties, have great potential for application in fields of SONAR transducers, high intensity focused ultrasound (HIFU), and ultrasonic motors.

• 한국세라믹학회지
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• 제44권11호
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• pp.613-617
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• 2007

The variations of physical and dielectric properties of low temperature dielectrics based on typical aluminoborosilicate glasses modified with several divalent oxides were investigated. The divalent oxides studied here included CaO, MgO, BaO, SrO and ZnO. All samples containing either 35 wt% or 45 wt% alumina filler were prepared at the same processing condition and then fired at $850^{\circ}C$ for 30 min. The resultant characteristics of fired samples depended on the choice of the divalent ion and the content of the alumina filler. Except for the ZnO modification, all other samples containing 35 wt% filler demonstrated promising densification as they exhibited reasonably high densities of 3.07-3.31 $g/cm^3$ and high shrinkages of 14.0-16.4%. Particularly, the sample containing ZnO was distinguished with large variations compared to the base sample, which can be highlighted with earlier densification and crystallization at unexpectedly low temperatures. The negative effects of the ZnO modification on densification and dielectric properties were thought to be associated with earlier crystallization potentially by influencing effective densification via viscous flow. As an optimum composition, the sample containing only CaO showed the most promising characteristics such as $k{\sim}8.05$ and $tan{\delta}{\sim}0.0018$ when 35 wt% alumina filler was used.