• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• Journal of the Korea Safety Management & Science
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• v.6 no.1
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• pp.301-309
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• 2004

An inorganic filling agent, ATH (alumina trihydrate) was used to induce inorganic-organic coupling by mixing with stearic acid, acryl silane, vinyl silane as surface treatment agents in order to apply as a high voltage insulating material. Volumetric resistivity was shown to vary with surface treatment agents, and the highest value was obtained in case of the mixture with vinyl silane. The dielectric breakdown intensity was shown to decrease gradually and saturate to a stable value, possibly due to the increase of cross link density in the vinyl radicals introduced to silica surface, resulting in stable dielectric breakdown intensity in the final stages. Tracking and flame retardant properties were also shown to be the best among the samples investigated in this study.

• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.230-238
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• 2018

Superparamagnetic iron oxide nanoparticles (SPIONs) have been prepared without using surfactants to assess their stability at different time intervals. The synthesized particles were characterized by X-ray diffraction, Fourier-transform infrared spectroscopy, ultraviolet-visible-near infrared spectroscopy, and energy dispersive spectroscopy. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images of the samples were also investigated. The average particle size was measured to be 12.7 nm even in the polydispersed form. The magnetic and dielectric characteristics of the $Fe_3O_4$ nanoparticles have also been studied and discussed in detail.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.65.2-65
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• 2003

Praseodymium oxid ($Pr_2$$O_3$) thin films have been deposited on Si(100) substrates by metalorganic chemical vapor deposition using praseodymium tris-2,2,6,6-tetramethyl-3,5-heptandionate as source material. Film structural, morphological, and compositional characterizations have been carried out. Dielectric properties have been studied as well by capacitance-voltage and current-voltage measurements on metal-oxide-semiconductor capacitors of several areas. The $Pr_2$$O_3$ films have shown a dielectric constant = 23-25 and a leakage current density of $8.8{\times}10$-e $A/\textrm{mm}^2$ at ＋1 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.538-543
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• 2008

Nanostructured materials are attracting increased interest and application. Exciting perspectives may be offered by electrical insulation. Epoxy/Organoclay nanocomposites may find new and upgraded applications in the electrical industry, replacing conventional insulation to provide improved performances in electric power apparatus, e.g, high voltage motor/generator stator winding insulation, dry mold transformer, etc. In the paper work, the electrical and thermal properties of epoxy/organoclay nanocomposites materials were studied. The electrical insulation characteristics were analyzed through the permittivity characteristics. by analyzing the permittivity spectra, it was found that dielectric constant becomes smaller with increase frequency and becomes larger with increase temperature. This indicates restriction of molecular motion and strong bonds at the epoxy/organoclay nanocomposites. The morphology of nanocomposites obtained was examined using TEM and X-ray diffraction. It has been shown that the presence of polar groups leads to an increased gallery distance and partial exfoliation. Nevertheless, full exfoliation of clay platelets has not been achieved.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.343-346
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• 1998

Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal $SiO_{2}$. From the measurement results, we find that these NO and ONO thin films are strongly depending on its condition and that optimized reoxided nitrided oxides (ONO) films show superior dielectric characteristics, and breakdown-to-change ( $Q_{bd}$ ) performance over the NO films, while maintaining a similar electric field dependence compared to NO layer.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1387-1389
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• 2001

In this paper, the microstructure and the dielectric properties of the $Sr_{1-x}Ca_xTiO_3$($0{\leq}x{\leq}0.2$)-based grain boundary layer ceramics were investigated. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant, ${\varepsilon}_r$ > 50000, and tan$\delta$ < 0.05, $\Delta$C < ${\pm}$ 10%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1241-1244
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• 2003

The materials showing high structure dispersity are developed on the natural quartz base and they are obtained by mechano-chemical technology. Depending on the processing conditions and subsequent applications the materials produced by mechano-chemical reaction (MCR) show concurrently magnetic, dielectric and electrical properties. The obtained magnetic-electrical powders classified by aggregate complex of their features as segnetomagnetics, contain a dielectric material as a carrying nucleus, particularly the quartz on that surface one or more layers of different compounds are synthesized having thickness up to $10{\sim}50nm$ and showing magnetic, electrical and other properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.125-129
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• 1992

When relaxation time will be distributed, TSC observed in the experimental procedure was analysed by using a potential model having two equilibrium positions and equations of dielectric properties was derived. Calculation of distribution was made by matrix method and compared/confirmed values obtained by TSC and alternating current which have a correspondence with each other. In this measurement, distribution of activation energy and relaxation time was determined by TSC peak at around 147k/364 of which center is 10$\^$-4/ sec/10$\^$5/ sec respectively at room temperature and also obtained dielctric loss factor at the range of 10$\^$-7/-10$\^$5/Hz. It seems that low temperature peak is local dispersion and high temperature peak have a relation to dielectric transition of the material.