• Macromolecular Research
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• v.14 no.1
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• pp.1-33
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• 2006

Polyimides (PIs) exhibit excellent thermal stability, mechanical, dielectric, and chemical resistance properties due to their heterocyclic imide rings and aromatic rings on the backbone. Due to these advantageous properties, PIs have found diverse applications in industry. Most PIs are insoluble because of the nature of the high chemical resistance. Thus, they are generally used as a soluble precursor polymer, which forms complexes with solvent molecules, and then finally converts to the corresponding polyimides via imidization reaction. This complexation with solvent has caused severe difficulty in the characterization of the precursor polymers. However, significant progress has recently been made on the detailed characterization of PI precursors and their imidization reaction. On the other hand, much research effort has been exerted to reduce the dielectric constant of PIs, as demanded in the microelectronics industry, through chemical modifications, as well as to develop high performance, light-emitting PIs and liquid crystal (LC) alignment layer PIs with both rubbing and rubbing-free processibility, which are desired in the flat-panel display industry. This article reviews this recent research progresses in characterizing PIs and their precursors and in developing low dielectric constant, light-emitting, and LC alignment layer PIs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.61-64
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• 2003

The degradation of the dielectric properties of insulating papers that were used under loaded conditions at cryogenic temperature was paid attention. Electrical and tensile stress properties of dielectric paper at cryogenic temperature have been investigated to optimum insulating design of high-Tc superconducting(HTS) cable. Tensile strength of PPLP in liquid nitrogen was high more than that of air, but tensile strain could know that decrease sharply. According as tensile strength increases, the breakdown stress of PPLP in liquid nitrogen was decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.49 no.2
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• pp.179-184
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• 2012

The size of various alumina ceramics used in semiconductor and display industry is required to increase with increase in wafer and panel size. In this research, large alumina ceramics were fabricated by uniaxial pressing, cold isostatic pressing and filter pressing with commercial powder and thereafter sintering at $1600^{\circ}C$ in gas furnace. The large alumina ceramics exhibited dense microstructure corresponding to 98.5% of theoretical density and 99.8% of high purity. The impurities and microstructural defects of the alumina were found to influence the resistance and dielectric properties. The volume resistances in these four aluminas were almost the same while the pure alumina was higher value. The dielectric constant, dielectric loss and dielectric strength of aluminas were placed within the range of 10.3~11.5, 0.018~0.036, and 10.1~12.4 kV/mm, respectively.

• Journal of the Korea Safety Management & Science
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• v.4 no.4
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• pp.137-146
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• 2002

In order to investigate the effect of irradiation by $^{60}Co-\gamma$rays as well as the e thermal treatment on the dielectric deterioration in ethylene propylene rubber, insulating material for electric cables used in atomic power plants, charging discharging current, residual built- up voltage and dielectric properties are measu discussed in this study. Variance in the characteristic of relative dielectric constant as a function of tem was observed in relatively high dose of irradiation. Since glass transition tem appeared at tens of degree Celsius below zero, the characteristic is attributed orientation polarization. Dielectric loss is generally increased, with increasing d irradiation in the characteristic of dielectric loss as a function of temperature, No d loss by thermal treatment was observed. Dielectric resistance decreases with increa of irradiation in the characteristic of charging current as a function of temperature be considered that dielectric resistance seems to be recovered by thermal treatm characteristic of discharging current as a function of time in the specimen less ir become similar to that of the unirradiated, when thermal treated. A peak is shown residual built- up voltage as a function of time, and the corresponding time of the shorten as increasing dose of irradiation. It is also observed that the corresponding the peak is lengthened by thermal treatment.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.386-389
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• 2007

The dielectric properties of $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films have been investigated according to the substrates in order to optimize the their properties. MgO, r-plane sapphire, and poly-crystalline sapphire (Alumina) substrates have been used to deposite $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films by RF magnetron sputtering. The BST thin films deposited on the single crystal (100)MgO substrates have high tunability and low dielectric loss. These results are caused by a low misfit between the lattice parameters of the BST films and the substrate. The BST films deposited on r-plane sapphire have relatively high misfit, and the tunability of 17% and dielectric loss of 0.0007. To improve the dielectric properties of the BST films, the post-annealing methods has been introduced. The BST films deposited on (100)MgO, (1102)r-plane sapphire, and poly-crystalline sapphire substrates have best properties in post-annealing conditions of $1050^{\circ}C$, $1100^{\circ}C$, and $1150^{\circ}C$, respectively. The different optimal post-annealing conditions have been found according to the different misfits between the films and substrates, and thermal expansion coefficients. Moreover, the films deposited on alumina substrate which is relatively cheap have a good tunability properties of 23% by the post-annealing.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.340-345
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• 2003

B $i_2$ $O_3$-Ti $O_2$ composite dielectric ceramics have been prepared by a conventional solid state ceramic route. The composite ceramics were prepared with starting materials of different origin and the microwave dielectric properties were investigated. The sintered ceramics were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray microanalysis, Raman and microwave methods. Structural and microstructural analyses identified two separate phases: Ti $O_2$(rutile) and B $i_2$ $Ti_4$0$_{11}$. The separate grains of titania and bismuth titanate were distributed uniformly in the ceramic matrix. The composition 0.88Ti $O_2$-0.12B $i_2$ $Ti_4$ $O_{11}$ was found to have a Q$\times$f of 9300 GHz (measured at a frequency of 3.9 GHz), a temperature coefficient of frequency, $\tau$$_{cf}$ near zero and a high relative permittivity, $\varepsilon$r of 83. The microwave dielectric properties were measured down to 20$^{\circ}$K K. The quality factor increased on cooling the ceramic samples.les.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.9
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• pp.459-463
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• 2004

In this study, the (l-x)$TiTe_3O_{8}$-x$MgTiO_3$ ceramics were investigated to obtain the improved dielectric properties of a high temperature stability and a sintering temperature of less than $900^{\circ}C$ which was necessary for the LTCC. According to the X-ray diffraction patterns of the (l-x)$TiTe_3O_{8}$-x$MgTiO_3$(x=0∼1) ceramics, the columbite structure of $TiTe_3O_{8}$ and ilmenite structure of $MgTiO_3$ were coexisted. Increasing the $MgTiO_3$ mole ratio(x), the density and dielectric constant were decreased and temperature coefficient of resonant frequency was moved to the negative direction and the quality factor was increased. In the case of the 0.6$TiTe_3O_{8}$-0.4$MgTiO_3$ ceramics sintered at $830^{\circ}C$ for 3hr., the microwave dielectric properties were $\varepsilon_{\gamma}$=29.3, Q${\times}$$f_{\gamma}$=39.600GHz and $\tau$$_{f}$=+9.3ppm/$^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.24-29
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• 2002

In this paper, the microstructure and the dielectric properties of Sr$\_$1-x/CaxTiO$_3$(0$\leq$x$\leq$0.2)-based grain boundary layer ceramics were investigated. The sintering temperature and time were 1420∼152 0$\^{C}$ and 4 hours in N$_2$ gas, respectively. The average grain size and the lattice constant were decreased with increasing content of Ca, but the average grain size was increased with increase of sintering temperature. The second phase foamed by the thermal diffusion of CuO from the surface leads to verb high apparent dielectric constant, $\xi$$\_$r/>50000 and low dielectric loss, tan$\delta$<0.05. X-ray diffraction patterns of Sr$\_$1-x/CaxTiO$_3$ exhibited cubic structure, and the peaks shifted upward and the peak intensity were decreased with x. This is due to the lattice contraction as Sr is replaced by Ca with a smaller ionic radius. The specimens treated thermal diffusion for 2hrs in 1150$\^{C}$ exhibited nonlinear current-voltage characteristic, and its nonlinear coefficient(a) was overt 7.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.111-113
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• 1996

Dielectric properties at microwave frequency region of the five-layered compound $Ba_5Nb_4O_{15}$ prepared by the conventional solid state reaction method were investigated. $Ba_5Nb_4O_{15}$ has excellent microwave dielectric characteristics; ${\varepsilon}_r$=38, Q=7500 at 10 GHz, and ${\tau}_l$=+50 ppm/K. Since this compound has a high dielectric constant, high Q and sufficiently stable characteristics, it is useful for the applications at microwave frequencies.