• Asian Journal of Atmospheric Environment
• /
• v.11 no.4
• /
• pp.270-282
• /
• 2017

To evaluate the deposition amount on a ground surface, mesoscale numerical models coupled with atmospheric chemistry are widely used for larger horizontal domains ranging from a few to several hundreds of kilometers; however, these models are rarely applied to high-resolution simulations. In this study, the performance of a dry and wet deposition model is investigated to estimate the amount of deposition via computational fluid dynamics (CFD) models with high grid resolution. Reynolds-averaged Navier-Stokes (RANS) simulations are implemented for a cone and a two-dimensional ridge to estimate the dry deposition rate, and a constant deposition velocity is used to obtain the dry deposition flux. The results show that the dry deposition rate of RANS generally corresponds to that observed in wind-tunnel experiments. For the wet deposition model, the transport equation of a new scalar concentration scavenged by rain droplets is developed and used instead of the scalar concentration scavenged by raindrops falling to the ground surface just below the scavenging point, which is normally used in mesoscale numerical models. A sensitivity analysis of the proposed wet deposition procedure is implemented. The result indicates the applicability of RANS for high-resolution grids considering the effect of terrains on the wet deposition.

• Journal of Electrochemical Science and Technology
• /
• v.8 no.3
• /
• pp.197-205
• /
• 2017

Lead dioxide thin films were electrodeposited on nickel substrate from acidic lead nitrate solution. Current efficiency and thickness measurements, cyclic voltammetry, AFM, SEM, and X-ray diffraction experiments were conducted on $PbO_2$ surface to elucidate the effect of lead nitrate concentration, current density, temperature on the morphology, chemical behavior, and crystal structure. Experimental results showed that deposition efficiency was affected by the current density and solution concentration. The film thickness was independent of current density when deposition from high $Pb(NO_3)_2$ concentration, while it decreased for low concentration and high current density deposition. On the other hand, deposition temperature had negative effect on current efficiency more for lower current density deposition. Cyclic voltammetric study revealed that comparatively more ${\beta}-PbO_2$ produced compact deposits when deposition was carried out from high $Pb(NO_3)_2$ concentration. Such compact films gave lower charge discharge current density during cycling. SEM and AFM studies showed that deposition of regular-size sharp-edge grains occurred for all deposition conditions. The grain size for high temperature and low concentration $Pb(NO_3)_2$ deposition was bigger than from low temperature and high concentration deposition conditions. While cycling converted all grains into loosely adhered flappy deposit with numerous pores. X-ray diffraction measurement indicates that high concentration, high temperature, and high current density favored ${\beta}-PbO_2$ deposition while ${\alpha}-PbO_2$ converted to ${\beta}-PbO_2$ together with some unconverted $PbSO_4$ during cycling in $H_2SO_4$.

• Journal of Electrical Engineering and Technology
• /
• v.6 no.5
• /
• pp.688-692
• /
• 2011

Carbon nanotubes (CNTs) are vertically grown inside high-aspect-ratio vertical pores of anodized aluminum oxide. A CNT catalyst layer is introduced by atomic layer deposition to the bottom of the pores, after which the CNTs are successfully grown from the layer using chemical vapor deposition. The CNTs formed a complete vertical conductive path. The conductivity of the CNT-vertical path is also measured and discussed. The present atomic layer deposition-incorporated catalyst deposition is predicted to enable the integration of CNTs with various challenging configurations, including high-aspect-ratio vertical channels or vertical interconnects.

• Journal of Environmental Science International
• /
• v.10 no.1
• /
• pp.1-8
• /
• 2001

This study was carried out estimating the dry deposition flux of $SO_2$at eight urban areas in Korea during one year of 1996. To calculate the deposition flux, deposition velocities were calculated by turbulence parameters estimated from routine meteorological data. Also, hourly averaged $SO_2$concentrations which calculated from air pollution monitoring data of each city were used. The dry deposition velocities were mostly higher in the coastal areas than the other areas, which would be caused by relatively strong wind. And, they were high in the daytime because of turbulence activities. The deposition flux of $SO_2$is mainly related to the atmospheric concentration. The annual average $SO_2$concentration and the deposition flux were 22.62ppb and 1510.52g/$\textrm{km}^2$/hr at Pusan respectively. Also, the flux was higher in winter than other season, which was a significant contribution of exhausted fuel for heating. While the deposition velocity was high to 0.688cm/sec at Yosu in case of strong wind and small cloud cover, the deposition flux was high to 1597.4g/$\textrm{km}^2$/hr at Pusan in case of weak wind and small cloud cover.

• Journal of the Korea Society for Simulation
• /
• v.17 no.2
• /
• pp.13-19
• /
• 2008

New Buffered deposition is proposed to decrease junction electric field in this paper. Buffered deposition process is fabricated after first gate etch, followed NM1 ion implantation and deposition & etch nitride layer. New Buffered deposition structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of Buffered deposition and conventional. Also, we design a test pattern including NMOSFET, PMOSFET, LvtNMOS, High pressure N/PMOSFET, so that we can evaluate DC/AC hot carrier degradation on-chip. As a result, we obtained 10 years hot carrier life time satisfaction.

• Journal of the Korean institute of surface engineering
• /
• v.48 no.3
• /
• pp.126-130
• /
• 2015

A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (${\mu}c-Si:H$) films of a low defect density at a high deposition rate. To understand proper deposition conditions of ${\mu}c-Si:H$ films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multi-hollow discharge plasma CVD method. In this paper the substrate temperature dependence of ${\mu}c-Si:H$ film properties are demonstrated. The higher substrate temperature brings about the higher deposition rate, and the process window of device quality ${\mu}c-Si:H$ films becomes wider until $200^{\circ}C$. This is attributed to competitive reactions between Si etching by H atoms and Si deposition.

• Applied Microscopy
• /
• v.45 no.3
• /
• pp.119-125
• /
• 2015

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted significant attention due to their unique and exotic properties attributed to their low dimensionality. In particular, semiconducting 2D TMDCs such as $MoS_2$, $WS_2$, $MoSe_2$, and $WSe_2$ have been demonstrated to be feasible for various advanced electronic and optical applications. In these regards, process to synthesize high quality 2D TMDCs layers with high reliability, wafer-scale uniformity, controllable layer number and excellent electronic properties is essential in order to use 2D TMDCs in practical applications. Vapor deposition techniques, such as physical vapor deposition, chemical vapor deposition and atomic layer deposition, could be promising processes to produce high quality 2D TMDCs due to high purity, thickness controllability and thickness uniformity. In this article, we briefly review recent research trend on vapor deposition techniques to synthesize 2D TMDCs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.253-253
• /
• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Transactions of Materials Processing
• /
• v.25 no.6
• /
• pp.353-358
• /
• 2016

Direct energy deposition (DED) is an additive manufacturing technique that involves the melting of metal powder with a high-powered laser beam and is used to build a variety of components. In recent year, it can be widely used in order to produce hard, wear resistant and/or corrosion resistant surface layers of metallic mechanical parts, such as dies and molds. For the purpose of the hardfacing to achieve high wear resistance and hardness, application of high speed steel (HSS) can be expected to improve the tool life. During the DED process using the high-carbon steel, however, defects (delamination or cracking) can be induced by rapid solidification of the molten powder. Thus, substrate preheating is generally adopted to reduce the deposition defect. While the substrate preheating ensures defect-free deposition, it is important to select the optimal preheating temperature since it also affects the microstructure evolution and mechanical properties. In this study, AISI M4 powder was deposited on the AISI 1045 substrate preheated at different temperatures (room temperature to $500^{\circ}C$). In addition, the micro-hardness distribution, cooling rates, and microstructures of the deposited layers were investigated in order to observe the influence of the substrate preheating on the mechanical and metallurgical properties.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.18 no.1
• /
• pp.212-222
• /
• 1994

In the annular Modified Chemical Vapor Deposition process using two concentric tubes, the inner tube is heated to maintain high temperature gradients to have high thermophoretic force which can increase particle deposition efficiency. However, higher axial velocity in a narrow gap between inner and outer tubes can result in a longer tapered entry length. In the present paper, a new concept using an annular jet from the inner tube is presented and shown to significantly reduce the tapered entry length with maintaining high efficiency. Effects of a jet injection on heat transfer, fluid flow and particle deposition have been studied. Of particular interests are the effects of jet velocity, jet location and temperature on the deposition efficiency and tapered length . Torch heating effects from both the previous and present passes are included and the effect of surface radiation between inner and outer tubes is also considered.