• Applied Chemistry for Engineering
• /
• v.29 no.1
• /
• pp.103-111
• /
• 2018

A plasma-catalytic combined process was used as an attempt to improve the conversion efficiency of nitrogen oxides ($NO_x$) over a wide temperature range ($150{\sim}500^{\circ}C$) to cope with the exhaust gas whose temperature varies greatly. Since the catalytic $NO_x$ reduction is effective at high temperatures where the activity of the catalyst itself is high, the $NO_x$ reduction was carried out without plasma generation in the high temperature region. On the other hand, in the low temperature region, the plasma was created in the catalyst bed to make up for the decreased catalytic activity, thereby increasing the $NO_x$ conversion efficiency. Effects of the types of catalysts, the reaction temperature, the concentration of the reducing agent (n-heptane), and the energy density on $NO_x$ conversion efficiency were examined. As a result of comparative analysis of various catalysts, the catalytic $NO_x$ conversion efficiency in the high temperature region was the highest in the case of the $Ag-Zn/{\gamma}-Al_2O_3$ catalyst of more than 90%. In the low temperature region, $NO_x$ was hardly removed by the hydrocarbon selective reduction process, but when the plasma was generated in the catalyst bed, the $NO_x$ conversion sharply increased to about 90%. The $NO_x$ conversion can be maintained high at temperatures of $150{\sim}500^{\circ}C$ by the combination of plasma in accordance with the temperature change of the exhaust gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.241-241
• /
• 2009

For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.

• 한국전산유체공학회:학술대회논문집
• /
• 2010.05a
• /
• pp.562-566
• /
• 2010

Numerical analysis of 150kW Huels-type arc jet was performed using compressible Navier-Stokes CFD code. To consider chemical reaction by high temperature, the flow was assumed to be chemical equilibrium states. As a turbulence and a radiation model, the two-equation k-epsilon model and the 3-band radiation model were adopted, respectively. Mass flow rate and current density were given as conditions for calculations. In this study, two kinds of mechanisms for injection of air flow wire considered. One is that air is provided by left wall surface and the other is that air is injected from upper wall surface. The pressure, density and temperature contours of two cases were compared and heat transfer rates were estimated. The numerical results of two cases were not much different to each other. However, in real 150KW device, air is injected from upper wall surface with swirl. To calculate more accurately, swirl effect is must be considered.

• Pediatric Infection and Vaccine
• /
• v.2 no.2
• /
• pp.186-192
• /
• 1995

We measured plasma concentrations of high density lipoprotein, total cholesterol and triglycerides in 31 patients with history of kawasaki disease during acute stage and convalescence stage. High density lipoprotein cholesterol and total cholesterol concentrations were significantly lower(P<0.001) in samples taken within 11 days of the onset of illness($28.7{\pm}12.4mg/dl$ and $145.20{\pm}29.60mg/dl$) than in the second samples taken 1-2months after onset of disease($51.5{\pm}15.2mg/dl$ and $175.4{\pm}29.0mg/dl$). Change of triglycerides was not significant. There was no correlation between the serum cholesterol cencentration and coronary aneurysm and continued long term surveillance of much population is necessary to monitor lipid level and their relation to development of premature coronary atherosclerosis.

• Korean Journal of Materials Research
• /
• v.13 no.10
• /
• pp.635-639
• /
• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.44 no.9
• /
• pp.789-795
• /
• 2016

Laser-induced combustions and explosions generated by high laser irradiances were explored by Laser-Induced Breakdown Spectroscopy (LIBS). The laser used for target ablation is a Q-switched Nd:YAG laser with 7 ns pulse duration at wavelength of 1064 nm laser energies from 40 mJ to 2500 mJ ($6.88{\times}10^{10}-6.53{\times}10^{11}W/cm^2$). The plasma light source from aluminum detected by the echelle grating spectrometer and coupled to the gated ICCD(a resolution (${\lambda}/{\Delta}{\lambda}$) of 5000). This spectroscopic study has been investigated for obtaining both the atomic/molecular signals of aluminum-oxygen and the calculated ambient condition such as plasma temperature and electron density. The essence of the paper is observing specific electron density ratio which can support the processes of chemical reaction and combustion between ablated aluminum plume and oxygen from air by inducing high laser energy.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.5
• /
• pp.505-511
• /
• 1996

The field emission characteristics of diamond films deposited by microwave plasma enhanced chemical vapor deposition (MPECVD) method were investigated. Diamond films were deposited on n-type Si(100) wafer using various mixtures of hydrogen and methane gas, and the I-V characteristics are measured. We observed that the field emission characteristics depend on the $CH_4$ concentration and the diamond film thickness. All the films show remarkable emission characteristics; low turn-on voltage, high emission current density at lower voltage, uniform stable current density, and good stability and reproducibility. The threshold field for producing a current density of 1mA/$\textrm{cm}^2$ is found as low as 7.6V/$\mu\textrm{m}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.285-288
• /
• 1997

Generally the high dielectric films, such as PZT(Pb(Z $r^{1-x}$ $Ti_{x}$ ) $O_3$) and BST(B $a_{l-x}$S $r_{x}$ Ti $O_3$) have been formed on the Pt thin films. However it is generally known that the dry etching of Pt is difficult because of its chemical stability. So, the dry etching of Pt remains at the preliminary work. Therefore, in this study, Pt etching mechanism was investigated with Ar/C $l_2$gas plasma by using XPS(X-ray photoelectron spectroscopy) and QMS(Quadrupole mass spectrometry). Ion current density was measured with Ar/C $l_2$gas plasma by using single Langmuir probe. XPS results shoved that the atomic % of Cl element on the etched Pt sample increased with increasing Ar/(Ar+C $l_2$). And QMS results showed that the increase of Ar partial pressure in the plasma resulted in the improvement of C $l_2$dissociation and Cl redical formation and simultaniously the increase of ion bombardment effects.s.s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.12
• /
• pp.996-1002
• /
• 2000

Ferroelectric (Ba, Sr) TiO$_3$(BST) thin films have attracted much attention for use in new capacitor materials of dynamic random access memories (DRAMs). In order to apply BST to the DRAMs, the etching process for BST thin film with high etch rate and vertical profile must be developed. However, the former studies have the problem of low etch rate. In this study, in order to increase the etch rate, BST thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) that have much higher plasma density than RIE (reactive ion etching) and ICP (inductively coupled plasma). Experiment was done by varying the etching parameters such as CF$_4$/(CF$_4$+Ar) gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 170nm/min under CF$_4$/CF$_4$+Ar) of 0.1, 600 W/-350 V and 5 mTorr. The selectivities of BST to Pt and PR were 0.6 and 0.7, respectively. Chemical reaction and residue of the etched surface were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS).

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.23 no.7
• /
• pp.8-13
• /
• 2009

Plasma enhanced chemical vapor deposition (PECVD) is commonly used for Carbon nanotubes (CNTs) fabrication, and the process can easily be applied to industrial production lines. In this works, we developed novel magnetized radio frequency PECVD system for one line process of CNTs fabrication for charge storable electrode application. The system incorporates aspects of physical and chemical vapor deposition using capacitive coupled RF plasma and magnetic confinement coils. Using this magnetized RF-PECVD system, we firstly deposited Fe layer (about 200[nm]) on Si substrate by sputter method at the temperature of 300[$^{\circ}$] and hence prepared CNTs on the Fe catalyst layer and investigated fundamental properties by scanning electron microscopy (SEM) and Raman spectroscopy (RS). High-density, aligned CNTs can be grown on Fe/Si substrates at the temperature of 600[$^{\circ}$] or less.