• 공업화학
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• 제20권1호
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• pp.99-103
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• 2009

반도체 소자의 실리콘 게이트 전극 식각공정은 산화막에 대한 높은 식각 선택비와 정확한 식각형상 제어 등의 공정요구 조건을 충족시키기 위해 고밀도 플라즈마 식각공정을 사용하나 식각 후 notching이 발생되는 문제점을 보이고 있다. 특이하게 도핑 되지 않은 비정질 실리콘을 게이트 전극 물질로 사용한 경우 발생된 notching의 위치가 가장 외곽에 위치한 게이트 전극선의 바깥쪽에서 주로 발생되는 것이 관찰 되었다. 본 연구에서는 $Cl_2/HBr/O_2$의 식각기체 구성으로 notching 발생이 식각변수들에 따라 받는 경향성을 파악하고, 식각장치 내에서 실리콘 기판에 도달하는 식각 이온들의 진행경로를 분석하였다. 주 원인은 플라즈마 내의 식각 활성종 이온들이 대전효과에 의하여 궤적의 왜곡이 일어나 notching 현상이 발생되는 것으로 파악되었다. 이 결과를 바탕으로 도핑 되지 않은 비정질 실리콘 게이트 식각에서 발생하는 notching의 형성기구를 정성적으로 설명하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• 한국표면공학회지
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• 제53권3호
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• pp.124-129
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• 2020

This study is for the development of high temperature ALD SiO₂ film process, optimized for gap-fill process in manufacturing memory products, using a space-divided PE-ALD system equipped with an independent control dual plasma system and orbital moving unit. Space divided PE-ALD System has high productivity, and various applications can be applied according to Top Lid Design. But space divided ALD system has a limitation to realize concentric deposition map due to process influence due to disk rotation. In order to solve this problem, we developed an orbit rotation moving unit in which disk and wafer. Also we used Independent dual plasma system to enhance thin film properties. Improve productivity and film density for gap-fill process by having deposition and surface treatment in one cycle. Optimize deposition process for gap-fill patterns with different depths by utilizing our independently controlled dual plasma system to insert N₂and/or He plasma during surface treatment, Provide void-free gap-fill process for high aspect ratio gap-fill patterns (up to 50:1) with convex curvature by adjusting deposition and surface treatment recipe in a cycle.

• 천문학회보
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• 제40권1호
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• pp.49.2-49.2
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• 2015

IntraCluster Medium (ICM) located at the galaxy cluster is in the state of very hot, tenuous, magnetized, and highly ionized X-ray emitting plasmas. High temperature and low density make ICM very viscous and conductive. In addition to the high conductivity, fluctuating random plasma motions in ICM, occurring at all evolution stages, generate and amplify the magnetic fields in such viscous ionized gas. The amplified magnetic fields in reverse drive and constrain the plasma motions beyond the viscous scale through the magnetic tension. Moreover, without the influence of resistivity viscous damping effect gets balanced only with the magnetic tension in the extended viscous scale leading to peculiar ICM energy spectra. This overall collisionless magnetohydrodynamic (MHD) turbulence in ICM was simulated using a hyper diffusivity method. The results show the plasma motions and frozen magnetic fields have power law of $E_V^k{\sim}k^{-3}$, $E_M^k{\sim}k^{-1}$. To explain these abnormal power spectra we set up two simultaneous differential equations for the kinetic and magnetic energy using an Eddy Damped Quasi Normal Markovianized (EDQNM) approximation. The solutions and dimensions of leading terms in the coupled equations derive the power spectra and tell us how the spectra are formed. We also derived the same results with a more intuitive balance relation and stationary energy transport rate.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.163.2-163.2
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• 2010

We developed a simple method to synthesis a nitrogen doped graphene, nitrogen plasma treated graphene (NPG) sheets thought nitrogen plasma etching of graphene oxide (GO). X-ray photo electron spectroscopy (XPS) study of NPG sheets treated at various plasma conditions reveal that N-doping is classified to 3 kinds of binding configurations. The nitrogen doping concentration is at least 1.5 at % and up to 3 at% with changing of ratio of nitrogen configuration in NPG. Our group demonstrate ultracapacitor with high capacity and extremely durable using a NPG sheets that are comparable to pristine graphene supercapacitor, and pseudocapacitor using polymer and metal oxide with redox reaction, capacitance that are three-times higher, and a cycle life that are extremely stable. We also realized flexible capacitor by using the paper electrode that are coated by NPG sheets. NPG paper capacitor presented almost same performance compare with NPG on a metal substrate, and durability is much more enhanced than that. To additionally explain that how different kind of atoms in graphene layers can act as the ion absorption sites, we simulated the binding energy between nitrogen in graphene layer and ions in electrolyte. Increasing the energy density and long cycle life of ultracapacitor will enable them to compete with batteries and conventional capacitors in number of applications.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.957-961
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• 2004

In order to realize high performance thin film transistor (TFT) on plastic substrate, Si film was deposited on plastic substrate at 170$^{\circ}C$ by using inductivity coupled plasma chemical vapor deposition (ICPCVD). Hydrogen concentration in as-deposited Si film was 3.8% which is much lower than that in film prepared by using conventional plasma enhanced chemical vapor deposition (PECVD). Si film was deposited as micro crystalline phase rather than amorphous phase even at 170$^{\circ}C$ because of high density plasma. By step-by-step Excimer laser annealing, dehydrogenation and recrystallization of Si film were carried out simultaneously. With step-by-step annealing and optimization of underlayer structure, it has succeeded to achieve large grain size of 300nm by using ICPCVD. Base on these results, poly-Si TFT was fabricated on plastic substrate successfully, and it is sufficient to drive pixels of OLEDs, as well as LCDs.

• Journal of Welding and Joining
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• 제13권1호
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• pp.103-114
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• 1995

Plasma Transferred arc(PTA) hard facing process has been developed to obtain an overlay weld metal having excellent wear resistance. The effect of Ti, TiSi$_{2}$ and TiC powders addition on the surface of Aluminum alloy 5083 has been investigated with PTA process. This paper describes the result of test the performance of the overlay weld metal. The result can be summarized as follows 1. Intermetallic compound is formed on surface of base metal in Ti or TiSi$_{2}$ powder but the reaction with surface of base metal is little seen in TiC powder. 2. In formation of composite layer on aluminum alloy surface by plasma transferred arc welding process, high melting ceramics like TiC powder is excellent. 3. The multipass welding process is available for formation of high density of powder. But the more number of pass, the less effect of powder, it is considered, and limits of number of pass. 4. By increasing area fraction of TiC powder on Al alloy surface, in especially TiC powder the hardness increase more than 40% area fraction and 88% shows about Hv 700.

• 한국분말재료학회지
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• 제21권5호
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• pp.382-388
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• 2014

Fe-TiC composite powder was fabricated by high-energy milling of powder mixture of (Fe, TiC) and (FeO, $TiH_2$, C) as starting materials, respectively. The latter one was heat-treated for reaction synthesis of TiC phase after milling. Both powders were spark-plasma sintered at various temperatures of $680-1070^{\circ}C$ for 10 min. with sintering pressure of 70 MPa and the heating rate of $50^{\circ}C/min$. under vacuum of 0.133 Pa. Density and hardness of the sintered compact was investigated. Fe-TiC composite fabricated from (FeO, $TiH_2$, C) as starting materials showed better sintered properties. It seems to be resulted from ultra-fine TiC particle size and its uniform distribution in Fe-matrix compared to the simply mixed (Fe, TiC) powder.

• Preventive Nutrition and Food Science
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• 제1권2호
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• pp.234-238
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• 1996

The purpose of this study was to determine whether vitamin {TEX}$B_{6}${/TEX} deficiency and age affect the blood cho-lesterol profile in exercising rats. Fifty four rats were fed either a viramin {TEX}$B_{6}${/TEX} deficient dief(-{TEX}$B_{6}${/TEX}) of a control diet(+{TEX}$B_{6}${/TEX}) for 6 weeks, then subdivided into 3 groups:non-exercise group(NE), exercise and sacrifice group(ES), exercise and recuperation group(ER). ES group was exercised in treadmill({TEX}$10^{o}${/TEX}, 0.5~0.8km/h) for 2 hours and sacrifice. ER group was recuperated three days with respective diet after exercise. At week 3 and 6, and level of plasma total cholesterol(TC), high density lipoprotein cholesterol(HDL_C) and low density lipoprotein cholesterol(LDL_C) were compared. In NE group, there was no difference in the levels of TC, HDL_C and LDL_C between +{TEX}$B_{6}${/TEX} rats and -{TEX}$B_{6}${/TEX} rats. The plasma levels of TC and LDL_C of 6 weeks were higher than those of 3 weeks and on difference in HDL_V between 3 weeks rats and 6 weeks rats. In ES group, there was also no difference in the levels of TC, HDL_C and LDL_C between +{TEX}$B_{6}${/TEX} rats and -{TEX}$B_{6}${/TEX} rats and there was no difference in TC, LDL-cholesterol between 3 weeks rats and 6 weeks rats. The level of HDL_C pf 6 weeks was lower than that of 3 weeks rats. In ER group, there was no difference in the levels of TC and LDL_C not only between +{TEX}$B_{6}${/TEX} rats and-{TEX}$B_{6}${/TEX} rats but also between 3 weeks rats and 6 weeks rats. The level of HDL_C was lower in -{TEX}$B_{6}${/TEX} rats than in +{TEX}$B_{6}${/TEX} rats and higher in 6 weeks rats than in 3 weeks rats. These results suggest that vitamin {TEX}$B_{6}${/TEX} deficiency may affect the HDL_C during exercise and after recuperation. The desirable effect of exercise on plasma Cholesterol profile is strengthened in adult age than young age.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.270-270
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• 2012

Low temperature atmospheric pressure plasmas (APPs) have been known to be effective for living cell inactivation in the water [1]. Many earlier research found that pH level of the solution was changed from neutral to acidic after plasma treatment. The importance of the effect of acidity of the solution for cell treatments has already been reported by many experiments. In addition, several studies have demonstrated that the addition of a small amount of oxygen to pure helium results in higher sterilization efficiency of APPs [2]. However, it is not clear yet which species are key factors for the cell treatment. To find key factors, we used GMoo simulation. We elucidate the processes through which pH level in the solution is changed from neutral to acidic after plasma exposure and key components with pH and air variation with using GMoo simulation. First, pH level in a liquid solution is changed by He+ and He(21S) radicals. Second, O3 density decreases as pH level in the solution decreases and air concentration decreases. It can be a method of removing O3 that cause chest pain and damage lung tissue when the density is very high. H2O2, HO2 and NO radicals are found to be key factors for cell inactivation in the solution with pH and air variation.