• 제목/요약/키워드: High density plasma

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Prediction of Tensile Strength for Plasma-MIG Hybrid Welding Using Statistical Regression Model and Neural Network Algorithm (통계적 회귀 모형과 인공 신경망을 이용한 Plasma-MIG 하이브리드 용접의 인장강도 예측)

  • Jung, Jin Soo;Lee, Hee Keun;Park, Young Whan
    • Journal of Welding and Joining
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    • v.34 no.2
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    • pp.67-72
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    • 2016
  • Aluminum alloy is one of light weight material and it is used to make LNG tank and ship. However, in order to weld aluminum alloy high density heat source is needed. In this paper, I-butt welding of Al 5083 with 6mm thickness using Plasma-MIG welding was carried out. The experiment was performed to investigate the influence of plasma-MIG welding parameters such as plasma current, wire feeding rate, MIG-welding voltage and welding speed on the tensile strength of weld. In addition we suggested 3 strength estimation models which are second order polynomial regression model, multiple nonlinear regression model and neural network model. The estimation performance of 3 models was evaluated in terms of average error rate (AER) and their values were 0.125, 0.238, and 0.021 respectively. Neural network model which has training concept and reflects non -linearity was best estimation performance.

Inductively Coupled Plasma Chemical Vapor Deposition System for Thin Film Ppassivation of Top Emitting Organic Light Emitting Diodes (전면발광 유기광소자용 박막 봉지를 위한 유도결합형 화학 기상 증착 장치)

  • Kim Han-Ki
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.6
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    • pp.538-546
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    • 2006
  • We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of $10^{11}$ electrons/$cm^3$ generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent $SiN_{x}$ passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below $50\;^{\circ}C$ without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the $SiN_x$ passivation layer without conventional lithography processes. Even at low substrate temperature, a $SiN_x$ passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of $5{\times}10^{-3}g/m^2/day$ and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.

Plasma Uniformity Control Technology for Dry Etching (ICP Dry etcher) Equipment for Medium and Large Displays (중·대형 디스플레이용 건식 식각(ICP Dry etcher) 설비의 플라스마 균일도 제어 기술)

  • Hong, Sung Jae;Jeon, Honggoo;Yang, Ho Sik
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.3
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    • pp.125-129
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    • 2022
  • The current display technology tends to be highly integrated with high resolution, the element size is gradually downsized, and the structure becomes complicated. Inductively coupled plasma (ICP) dry etcher of various types of etching equipment is a structure that places a large multi-divisional antenna source on the top lid, passes current to the Antenna, and generates plasma using the induced magnetic field generated at this time. However, in the case of a device of a large area size, a support that can withstand a load structurally is necessary, and when these support portions are applied, arrangement of antenna becomes difficult, which causes reduction in uniformity. As described above, the development of antenna source of a large area having a uniform plasma density on the whole surface is difficult to restrict hardware (H/W). As a solution to this problem, we confirmed the change in uniformity of plasma by applying two kinds of specific shape faraday shield(FICP) to the lower part of the large area upper lid antenna of 6 and 8th more than that generation size. In this thesis, we verify the faraday shield effect which can improve plasma uniformity control of ICP dry etcher equipment applied to medium and large displays.

A Study on Emission Characteristics of Ar Gas Using a Single Langmuir Probe Method in Radio-Frequency Inductively Coupled Plasma (13.56MHz ICP에서 단일 탐침법에 의한 Ar 가스의 발광특성 연구)

  • Jo, Ju-Ung;Choi, Yong-Sung;Kim, Yong-Kab;Park, Dae-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.611-615
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    • 2004
  • In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. Above all, Electrodeless fluorescent lamp is the removal of internal electrodes and heating filaments that are a light-limiting factor of conventional fluorescent lamps. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. Therefore, the electrodeless fluorescent lamps is substantially higher than that of conventional fluorescent lamps and last up to 60,000 hours. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an argon discharge for pressure from 10 [mTorr] and input RF power 100 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

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Ni-Grain Size Dependent Growth of Vertically Aligned Carbon Nanotubes by Microwave Plasma-Enhanced Chemical Vapor Deposition and Field Emission Properties

  • Choi, Young-Chul;Jeon, Seong-Ran;Park, Young-Soo;Bae, Dong-Jae;Lee, Young-Hee;Lee, Byung-Soo;Park, Gyeong-Su;Choi, Won-Bong;Lee, Nae-Sung;Kim, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.231-234
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    • 2000
  • Vertically aligned carbon nanotubes were synthesized on Ni-coated Si substrates using microwave plasma-enhanced chemical vapor deposition. The grain size of Ni thin films was varied with the RF power density during the RF magnetron sputtering process. It was found that the diameter, growth rate, and density of carbon nanotubes could be controlled systematically by the grain size of Ni thin films. With decreasing the grain size of Ni thin films, the diameter of the nanotubes decreased, whereas the growth rate and density increased. High-resolution transmission electron microscope images clearly demonstrated synthesized nanotubes to be multiwalled. The number of graphitized wall decreased with decreasing the diameter. Field emission properties will be further presented.

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Influence of the Electrical Parameters on the Fabrication of Oxide Layers on the Surface of Al-1050 by a Plasma Electrolytic Process (플라즈마 전해 산화법에 의한 Al-1050 표면상의 산화막 제조에 미치는 전기적 변수의 영향)

  • Nam, Kyung-Su;Song, Jeong-Hwan;Lim, Dae-Young
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.498-504
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    • 2012
  • Oxide layers were prepared by an environmentally friendly plasma electrolytic oxidation (PEO) process on an Al-1050 substrate. The electrolyte for PEO was an alkali-based solution with $Na_2SiO_3$ (8 g/L) and NaOH (3 g/L). The influence of the electrical parameters on the phase composition, microstructure and properties of the oxide layers formed by PEO were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The voltage-time responses were recorded during various PEO processes. The oxides are composed of two layers and are mainly made of ${\alpha}$-alumina, ${\gamma}$-alumina and mullite phases. The proportion of each phase depends on various electrical parameters. It was found that the surface of the oxides produced at a higher current density and Ia/Ic ratio shows a more homogeneous morphology than those produced with the electrical parameters of a lower current density and lower Ia/Ic ratio. Also, the oxide layers formed at a higher current density and higher Ia/Ic ratio show high micro-hardness levels.

Effects of Dietary Lycopene Supplementation on Plasma Lipid Profile, Lipid Peroxidation and Antioxidant Defense System in Feedlot Bamei Lamb

  • Jiang, Hongqin;Wang, Zhenzhen;Ma, Yong;Qu, Yanghua;Lu, Xiaonan;Luo, Hailing
    • Asian-Australasian Journal of Animal Sciences
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    • v.28 no.7
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    • pp.958-965
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    • 2015
  • Lycopene, a red non-provitamin A carotenoid, mainly presenting in tomato and tomato byproducts, has the highest antioxidant activity among carotenoids because of its high number of conjugated double bonds. The objective of this study was to investigate the effect of lycopene supplementation in the diet on plasma lipid profile, lipid peroxidation and antioxidant defense system in feedlot lamb. Twenty-eight Bamei male lambs (90 days old) were divided into four groups and fed a basal diet (LP0, 40:60 roughage: concentrate) or the basal diet supplemented with 50, 100, and 200 mg/kg lycopene. After 120 days of feeding, all lambs were slaughtered and sampled. Dietary lycopene supplementation significantly reduced the levels of plasma total cholesterol (p<0.05, linearly), total triglycerides (TG, p<0.05) and low-density lipoprotein cholesterol (LDL-C, p<0.05), as well as atherogenic index (p<0.001), whereas no change was observed in high-density lipoprotein cholesterol (p>0.05). The levels of TG (p<0.001) and LDL-C (p<0.001) were decreased with the feeding time extension, and both showed a linear trend (p<0.01). Malondialdehyde level in plasma and liver decreased linearly with the increase of lycopene inclusion levels (p<0.01). Dietary lycopene intake linearly increased the plasma antioxidant vitamin E level (p<0.001), total antioxidant capacity (T-AOC, p<0.05), and activities of catalase (CAT, p<0.01), glutathione peroxidase (GSH-Px, p<0.05) and superoxide dismutase (SOD, p<0.05). The plasma T-AOC and activities of GSH-Px and SOD decreased with the extension of the feeding time. In liver, dietary lycopene inclusion showed similar antioxidant effects with respect to activities of CAT (p<0.05, linearly) and SOD (p<0.001, linearly). Therefore, it was concluded that lycopene supplementation improved the antioxidant status of the lamb and optimized the plasma lipid profile, the dosage of 200 mg lycopene/kg feed might be desirable for growing lambs to prevent environment stress and maintain normal physiological metabolism.

Carbohydrate Intake Associated with Risk Factors of Coronary Heart Disease in the Adults: NHANES III (성인의 만성질환관련 탄수화물 식사지침 연구)

  • 정혜경;양은주;박원옥
    • Journal of Nutrition and Health
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    • v.33 no.8
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    • pp.873-881
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    • 2000
  • Recent research reported health risks associate with high carbohydrates diets. Objectives of this study were to evaluate in a cross-sectional study if high carbohydrate diet is associated with coronary heart disease(CHD) risk factors: examined blood concnetration of triglyceride(TG), total cholesterol, high density lipoprotein cholesterol(HDL-C), plasma glucose, systolic blood pressure(BP), body mas index(BMI), wasit-hip ratio(WHR) and waist-stature ratio(WSR). Using the most recent US National Health and Nutrition Examination Survey(IIINHANES III) data, the nationally representative US population (3772 men, 4095 women of 25-64 years of age) was divided into low vs. high carbohydrate diet groups(below 40% vs. above 60% energy intake from cab carbohydrates) and compared by the CHD risk factors. Triglyceride was higher(p<0.001) in the high carbohydrate group, whereas high density-lipoprotein cholesterol(HDL-C)was lower(p<0.01) in the high carbohydrate diet group. In plasma glucose, there was no significant differences between high carbohydrate diet and low carbohydrate diet. In adiposity(BMI, WHR and WSR), it also showed no significant differences, After adjustment for age, ethnicity, alcohol and smoking in upper 60%-carbohydrate diet, Odds Ratio of TG and HDL-C were 1.42 and 1.23 in men and 1.22 and 1.17 in women. 50-60% carbohydrate diet was associated with decreased risk of CHD. Dietary guidelines for Koreans recommend 60-70% of total energy from carbohydrate, as Koreans traditionally consumed high carbohydrate diets. In a cross-sectional population of adults, diets containing 55-60% energy from carbohydrate were suggested as a dietary guideline of carbohydrate intake for Koreans. (Korean J Nutrition 33(8) : 873-881, 2000)

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Dry etching of polysiliconin high density plasmas of $CI_2$ (고밀도 플라즈마를 사용한 $CI_2$/ Poly-Si 건식 식각)

    • Journal of the Korean Vacuum Society
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    • v.8 no.1
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    • pp.63-69
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    • 1999
  • The characteristic parameters of high density plasma source (Helical Resonator) have been measured with Langmuir probe to get the plasma density electron temperature, ion current density, etc. Optical emission spectra of Si and SiCl have been analyzed in $Cl_2$$/poly-Si system to elucidate etching mechanism. In this system, the main reaction to remove silicon atoms on the surface is proceeding mostly through chemical reaction, not pure physical reaction. The emission intensity of SiCl (chemical etching product) increases much faster than Si (pure physical etching product) with increasing the concentration of impurities (P). This is due to the electron transfer from substrate to the surface via Si-Cl bond. As a result, Si-Cl bond becomes more ionic and mobile, therefore the Cl-containing etchant forms $SiCl_x$ with surface more easily. Consequently, for the removal of Si atom from poly silicon surface, the chemical etching is more favorable than physical etching with increasing P concentrations.

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Mechanism Study of Flowable Oxide Process for Sur-100nm Shallow Trench Isolation

  • Kim, Dae-Kyoung;Jang, Hae-Gyu;Lee, Hun;In, Ki-Chul;Choi, Doo-Hwan;Chae, Hee-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.68-68
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    • 2011
  • As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

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