• Journal of Nutrition and Health
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• v.15 no.1
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• pp.47-53
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• 1982

The study was designed to observe the effects of dietary intake of three different levels of polyunsaturated to saturated fatty acid (P/S) ratio on plasma HDL - cholesterol and triglyceride in plasma and tissues of adult rats. Rats were assigned into the three diet groups, composed of protein 24%, carbohydrate 46%, and fat 30% of total caloric intake. However, the P/S ratio of fat was adjusted by using beef tallow, corn oil and perilla oil to give 0.2, 1.1 and 6.0. All groups were fed ad libitum for 4 week. Plasma cholesterol level was decreased but net significantly with increasing P/S ratio of dietary fat, and showed significant negative correlation coefficient. Plasma TG level was also decreased with increasing PUFA level of dietary fat. However, the effect of P/S ratio (6.0) was not greater than that of P/S ratio (1.1) on plasma TG concentration. This implied that high level of PUFA was not required to change plasma TG level as much in the case of HDL-cholesterol. Plasma HDL-cholesterol was significantly increased only in the group of P/S ratio 6.0 which suggested that high level of dietary PUFA was required to increase HDL level. There was a decreasing trend in the levels of total cholesterol and TG per g liver with increasing P/S ratio of dietary fat. There was no effect in the levels of TG per g skeletal muscle by P/S ratio but the level of cholesterol per unit skeletal muscle was rather increased with increased P/S ratio.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.460-462
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• 2004

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. There are several leakage current mechanisms in which the stored data disappears. The mechanisms of data disappear is as follow, 1 )Junction leakage current between the junction, 2) Junction leakage current from the capacitor node contact, 3)Sub-threshold leakage current if the transfer transistor is affected by gate etch damage etc. In this paper we showed the plasma edge damage effect to find out data retention time effectiveness. First we measured the transistor characteristics of forward and reverse bias. And junction leakage characteristics are measured with/without plasma damage by HP4145. Finally, we showed the comparison TRET with etch damage, damage_cure_RTP and hydrogen_treatment. As a result, hydrogen_treatment is superior than any other method in a curing plasma etch damage side.

• Journal of Nutrition and Health
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• v.31 no.2
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• pp.135-142
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• 1998

This study was undertaken to determine whether dehulled defatted flour has an effect on postprandial plasma lipoprotein composition, hepatic lipid composition, enzyme and hormone levels in rats. Control(casein) and experimental (dehulled defatted soy flour)diets were fed to rats for 7 weeks. all animals (S. D. rats, male) were sacrificed 2 hrs after the feeding of 5g of each diet. Defatted soy flour feeding significantly lowered postprandial plasma total cholesterol, chylomicron/VLDL-cholesterol, hepatic cholesterol and triglyceride(TG) as compared with casein feeding, whereas no significant effect on plasma TG was observed. Intestinal kipase activity was elevated , whereas trypsin activity was suppressed in the dehulled defatted soy flour group. Plasma glucagon, thyroid hormone and hepatic HMG-coA reductase levels were not affected by diet treatment. These results hypothesize that dehulled defatted soy flour affects cholesterol digestion and absorption in guts, thus delaying the appearance of chylomicron cholesterol in plasma or affecting the disappearance of chylomicron remnant to high-density-lipoprotein(HDL).

• Journal of information and communication convergence engineering
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• v.3 no.4
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• pp.187-190
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• 2005

High aspect ratio via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via-hole, this sophisticated and important process still hold several problems, such as etching stop and loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.303-306
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• 2005

High aspect ration via-hole etching process has emerged as one of the most crucial means to increase component density for ULSI devices. Because of charge accumulation in via hole, this sophisticated and important process still hold several problems, such as etching stop, loading effects during fabrication of integrated circuits. Indeed, the concern actually depends on accumulated charge. For monitoring accumulated charge during plasma etching process, charge-up monitoring sensor was fabricated and tested under some plasma conditions. This paper presents a neural network-based technique for analyzing and modeling several electrical performance of plasma charge-up monitoring sensor.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.197-202
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• 2005

Due to high permeability of the ferrite core, the characteristics of the ICP are expected to be greatly improved. We investigated the effect of the ferrite cores on conventional inductively coupled plasma. It was observed that the current and voltage in ike ICP antenna are slightly decreased and the power transfer efficiency is increased. However, due to eddy current and hysterisis loss, plasma density in the ICP with the ferrite cores is not increased. It seems that the ICP with the ferrite cores at low frequency (${\~}$100kHz) will be greatly improved since the losses at the low frequency can be negligible.

• Journal of the Korea Convergence Society
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• v.12 no.1
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• pp.243-250
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• 2021

In the medical field, applications of plasma are applied sterilize instruments mainly but with the advent of bio-plasma technology, the scope of application is expanding. Recently, In addition, high-density miniaturization with handheld is required for sophisticated procedures when irradiated directly or treated with non-standard conditions. Rosen-type PZT is a device with a structure that generates high voltage plasma by achieving voltage transformation through electro-mechanical coupling using piezoelectric effect.and is used in portable plasma generating devices as an advantage to increase energy density relatively. In this paper, Rosen-type PZT was modeled using equivalent circuits and was carried out and a plasma generating device for medical application was designed and prototype tested. Prototype plasma generating device generates an output voltage of 5.8 kV with 12V input power and is designed to operate at high voltage by applying the half-bridge topology power converter. The results of the study confirmed the availability of various medical devices, such as plasma jets or direct exposure equipment.

• Applied Chemistry for Engineering
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• v.34 no.5
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• pp.507-514
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• 2023

The selective catalytic reduction (SCR) of nitrogen oxides (NO_x) was investigated in a catalyst (Ag/γ-Al₂O₃) packed dielectric barrier discharge plasma reactor. The intermittent generation of plasma in the catalyst bed partially oxidized the hydrocarbon reductant for NO_x removal to several aldehydes. Compared to using the catalyst alone, higher NO_x conversion was observed with the intermittent generation of plasma due to the formation of highly reductive aldehydes. Under the same operating conditions (temperature: 250 ℃; C/N: 8), the NO_x reduction efficiencies were 47.5%, 92%, and 96% for n-heptane, propionaldehyde, and butyraldehyde, respectively, demonstrating the high NO_x reduction capability of aldehydes. To determine the optimal condition for intermittent plasma generation, the high voltage on/off cycle was adjusted from 0.5 to 3 min. The NO_x reduction performance was compared between continuous and intermittent plasma generation on the same energy density basis. The highest NO_x reduction efficiency was achieved at 2-min high voltage on/off intervals. The reason that the intermittent plasma discharge exhibited higher NO_x reduction efficiency even at the same energy density, compared to the continuous plasma generation case, is that the intermediate products, such as aldehydes generated from hydrocarbon, were more efficiently utilized for the reduction of nitrogen oxides.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.2
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• pp.237-242
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• 2012

In this paper, we investigated effects of ITO electrode geometry and dielectric layer thickness on the discharge Characteristic of AC PDP. As the dielectric thickness is decreased ($30{\sim}12{\mu}m$), firing and sustain voltage is decreased. Luminance and discharge power increase with decreasing dielectric layer thickness because of increasing capacitance between plasma and electrodes. Reactive power decreases with dielectric thickness due to reduced capacitance between sustain electrodes. For the high Xe test panel with small ITO electrode, luminous efficacy as well as luminance increase with decreasing dielectric layer thickness. This result suggest that high power density and small plasma volume is beneficial for high efficacy discharge.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.5
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• pp.183-190
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• 2005

In order to drive the high-density plasma displays, a high-speed driving technology must be researched. In this experiment, the relationship between the width of the address electrode and high-speed driving is analyzed using the Vt close curve and the panel structure for high-speed driving is proposed. In addition we show that the wider the width of the address electrode is, the narrower the width of the scan pulse becomes. Therefore, we could achieve the minimum data voltage of 50.1V at a scan pulse width of $1.0/{\mu}s$ and a ramp voltage of 210V at an address electrode width of $180/{\mu}m$ for the high-speed driving 4-inch test PDP.