• The Korean Journal of Ceramics
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• 제2권4호
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• pp.231-237
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• 1996

Mullite ceramics can be sintered by rf plasma sintering to densities as high as 97% compared to the theoretical density of the mullite, while SiC whisker-reinforced mullite matrix ceramic composites were not sintered by plasma sintering. Decomposition of mullite occurs in a superficial regins at the outside surface of the specimen by volatilization of SiO at elevated temperature by plasma. SiC whiskers were destroyed, and the matrix was converted to alumina from SiC-whisker reinforced mullite matrix ceramic composites during the plasma sintering. Accelerated volatilization from the SiC whisker in the mullite prevents sintering. The volatile species are mainly SiC and CO gas species. The effects of plasma on mullite and SiC-whisker reinforced mullite matrix composites are interpreted by thermodynamic simulation of the volatile species in the plasma environment. The thermodynamic results show that the decomposition will not occur during hot pressing.

• 전기학회논문지
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• 제58권11호
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• pp.2236-2241
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• 2009

In this study, the electron behavior was investigated numerically in order to obtain guidelines for design and operation of a new plasma source by a magnetic neutral loop discharge (NLD). The optimum plasma production was investigated by using a 3-dimensional simulation model which enables the electron behavior calculation from source region to downstream region. The results showed that the high-density plasma produced around the magnetic neutral loop (NL) is transferred from the NL region to the downstream region along magnetic force lines. Also the avaraged electron energy is increased with the normalized RF electric field (F), which can be used to characterize the plasma production efficiency of NLD system. Considering the relation between F and plasma production, in-depth plasma control can be achieved at a given specific process condition.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.228-231
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• 2002

We report the effect of density of thin films on moisture adsorption and hydration of MgO thin film, usually used as a protective layer in AC-PDP After hydration, lots of hemispherical shaped clusters, $Mg(OH)_2$, formed on the surface of MgO thin films. However clusters formed on low-density thin films were bigger than those on high-density films. From ERD spectra, it seemed that the concentration of hydrogen was very high in the region 20 nm from the surface of MgO thin film. The low-density thin film had more hydrogen than high-density thin film. From simulation results of ERD and RBS it was found that hydration reaction also occurred in the inner part of the film. So diffusion of Mg atoms from the inner part of the film to the surface and $H_2O$ molecules from the surface to the inner part of the film is important. And because low density thin film has many short paths for diffusion of Mg atoms and $H_2O$ molecules, low-density thin film is more hydrated. So to suppress hydration of MgO thin films, high-density thin film is needed.

• Applied Science and Convergence Technology
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• 제26권6호
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• pp.201-207
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• 2017

An electron-excited temperature ($T_{ex}$) is not determined by the Boltzmann plots only with the spectral data of $4p{\rightarrow}4s$ in an Ar-plasma jet operated with a low frequency of several tens of kHz and the low voltage of a few kV, while $T_{ex}$ can be obtained at least with the presence of a high energy-level transition ($5p{\rightarrow}4s$) in the high-voltage operation of 8 kV. The optical intensities of most spectra that are measured according to the voltage and the measuring position of the plasma column increase or decay exponentially at the same rate as that of the intensity variation; therefore, the excitation temperature is estimated by comparing the relative optical-intensity to that of a high voltage. In the low-voltage range of an Ar-jet operation, the electron-excitation temperature is estimated as being from 0.61 eV to 0.67 eV, and the corresponding radical density of the Ar-4p state is in the order of $10^{10}{\sim}10^{11}cm^{-3}$. The variation of the excitation temperature is almost linear in relation to the operation voltage and the position of the plasma plume, meaning that the variation rates of the electron-excitation temperature are 0.03 eV/kV for the voltage and 0.075 eV/cm along the plasma plume.

• 한국재료학회지
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• 제18권7호
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• pp.357-361
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• 2008

Microstructure and mechanical properties of WC-3 wt% Co cemented carbides, fabricated by a spark plasma sintering (SPS) process, were investigated in this study. The WC-3 wt%Co powders were sintered at $900{\sim}1100^{\circ}C$ for 5min under 40MPa in high vacuum. The density and hardness were increased as the sintering temperature increased. WC-3 wt%Co compacts with a relative density of 97.1% were successfully fabricated at $1100^{\circ}C$. The fracture toughness and hardness of a compact sintered at $1100^{\circ}C$ were $21.6 MPa{\cdot}m^{1/2}$ and 4279 Hv, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.245-246
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• 2011

Emission lines ratios were used for diagnostics of and excited level densities in low-temperature plasmas. In this work, an optical emission spectroscopy (OES) was used to determine the electron temperature and metastable level densities in low-pressure inductively coupled plasma. The emission spectroscopy method was based on a simple collisional-radiative model. The selected lines of the Ar(4p to 4s) were influenced by the radiation trapping at relatively high pressures where the plasma become optically thick. To quantify this effect, a pressure dependence factor ${\alpha}$(P) was derived by using corrections for the measured intensities. It was found that the lower metastable level densities were obtained when ${\alpha}$(P) increased with the increasing discharge pressure. The effect of non-Maxwellian electron energy distribution functions (EEDFs) on the metastables was also presented and discussed.

• 반도체디스플레이기술학회지
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• 제3권3호
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• pp.45-50
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• 2004

Highly oriented diamond (HOD) films in polycrystalline can be grown on the (100) silicon substrate by microwave plasma CVD. Bias enhanced nucleation (BEN) method was adopted for highly oriented diamond deposition with high nucleation density and uniformity. The substrate was biased up to -250[Vdc] and bias time required for forming a diamond film was varied up to 25 minutes. Diamond was deposited by using $\textrm{CH}_4$/CO and $H_2$ mixture gases by microwave plasma CVD. Nucleation density and degree of orientation of the diamond films were studied by SEM. Thermal conductivity of the diamond films was ∼5.27[W/cm.K] measured by $3\omega$ method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.5-8
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• 2000

The population density of excited species in dc, rf and laser ablation plume plasmas has been measured using laser absorption spectroscopy. It was shown that, when the plasma was modulated by on and off with, the sensitivity and signal to noise (S/N) ratio became high. For example, the atomic O(3$^{5}$ S$^{o}$ $_2$) Population density, No* in $O_2$/He mixtures was obtained by the highest S/N ratio at a frequency of 2.7kHz. In a 20Torr room air, the lowest No* level to be detectable was shown to be an order of 10$^{7}$ cm$^{-3}$ . The population densities of resonance Ar(1S$_2$) and Xe(1S$_4$) levels were also measured in barrier discharges and laser ablation plasmas.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.463-463
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• 2012

ITRS (international technology roadmap for semiconductors)에 따르면 MOS(metal-oxide-semiconductor)의 CD (critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/$SiO_2$를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두된다고 보고하고 있다. 일반적으로 high-k dielectric를 식각시 anisotropic 한 식각 형상을 형성시키기 위해서 plasma를 이용한 RIE (reactive ion etching)를 사용하고 있지만 PIDs (plasma induced damages)의 하나인 PIED (plasma induced edge damage)의 발생이 문제가 되고 있다. PIED의 원인으로 plasma의 direct interaction을 발생시켜 gate oxide의 edge에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 high-k dielectric의 식각공정에 HDP (high density plasma)의 ICP (inductively coupled plasma) source를 이용한 원자층 식각 장비를 사용하여 PIED를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. One-monolayer 식각을 위한 1 cycle의 원자층 식각은 총 4 steps으로 구성 되어 있다. 첫 번째 step은 Langmuir isotherm에 의하여 표면에 highly reactant atoms이나 molecules을 chemically adsorption을 시킨다. 두 번째 step은 purge 시킨다. 세 번째 step은 ion source를 이용하여 발생시킨 Ar low energetic beam으로 표면에 chemically adsorbed compounds를 desorption 시킨다. 네 번째 step은 purge 시킨다. 결과적으로 self limited 한 식각이 이루어짐을 볼 수 있었다. 실제 공정을 MOS의 high-k dielectric에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU (North Carolina State University) CVC model로 구한 EOT (equivalent oxide thickness)는 변화가 없으면서 mos parameter인 Ion/Ioff ratio의 증가를 볼 수 있었다. 그 원인으로 XPS (X-ray photoelectron spectroscopy)로 gate oxide의 atomic percentage의 분석 결과 식각 중 발생하는 gate oxide의 edge에 trap의 감소로 기인함을 확인할 수 있었다.

• Journal of Nutrition and Health
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• 제35권4호
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• pp.421-430
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• 2002

사철쑥 (Artemisia capitlaris Thunberg)으로 성인병의 예방목적으로 흰쥐 (Sprague-Dawley rats)의 혈액 및 간지질 대사에 미치는 영향에 대한 효과를 알아보았다. 1) 사료이용효율은 L, LM, LP군에서 높았다 (p < 0.01). 혈청의 콜레스테롤 농도, 동 맥 경화지수 (p <0.01), 중성지질 (p < 0.01)은 L, LM, LP군에서 높았지만, 사철쑥 분말 첨가에 의해 HDL-콜레스테롤과 HTR를 증가시켰다 (p < 0.01). 2) 혈청 및 간 조직의 과산화지질은 C군에 비하여 L군이 유의적으로 많았으며, 사철쑥 첨가시 감소하였다 (p < 0.05). 3) 간 조직의 지방침착은 L군에서 지방양성구의 크기와 분포가 두드러지게 높았고. LM군, LP길군에서는 감소하였다. 이상의 결과는 사철쑥은 혈액 및 간의 지질조성 및 지질 대사에 바람직한 효과를 갖는 것으로 보인다. 이는 사철쑥이 성인병예방에 유용한 기능성 식품으로서 가치가 있을 것으로 사료된다.