• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권8호
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• pp.591-597
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• 1999

The propagation characteristics of high power microwave pulse in an air-breakdown environment are examined. The maximum electron density produced by microwave air-breakdown is limited to $10^6cm^{-3}$ by the tail-erosion effect. Inorder to increase the electron density, the scheme using two pulses intersecting at a desired height is considered. Increasing the carrier frequency, it is shown that microwave pulse can be transferred without the serious erosion in the numerical simulation. This result is useful for the above scheme. Also, an experiment is conducted to show the tail-erosion effect and confirm that a rapidly generated lossy plasma can cause spectral breaking and frequency shift of a high-power microwave pulse. The experimental results are presented by comparing the frequency spectrum of an incident pulse with that of the pulse transmitted through a self-induced air-breakdown environment. The experimental results show that the amount of frequency upshift is co-related with the ionization rate, whereas that of frequency downshift is correlated with the energy losses from the pulse in the self-generated plasma.

• 한국분말재료학회지
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• 제21권2호
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• pp.97-101
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• 2014

The 304 stainless steel powders were prepared by high energy ball milling and subsequently sintered by spark plasma sintering, and the microstructural characteristics and micro-hardness were investigated. The initial size of the irregular shaped 304 stainless steel powders was approximately 42 ${\mu}m$. After high energy ball milling at 800 rpm for 5h, the powders became spherical with a size of approximately 2 ${\mu}m$, and without formation of reaction compounds. From TEM analysis, it was confirmed that the as-milled powders consisted of the aggregates of the nano-sized particles. As the sintering temperature increased from 1073K to 1573K, the relative density and micro-hardness of sintered sample increased. The sample sintered at 1573K showed the highest relative density of approximately 95% and a micro-hardness of 550 Hv.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.259.1-259.1
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• 2014

Recently non-thermal plasma has been frequently applied to various research fields. The liquid plasma have received much attention lately because of interests in surgical and nanomaterial synthesis applications. Especially, intensive researches have been carried out for non-thermal plasma in liquid by using various electrode configurations and power supplies. We have developed a bioplasma source which could be used in a liquid, in which outer insulator has been covered onto the outer electrode. Also we have also put an insulator between the inner and outer electrode. Based on the surface discharge mode, the nonthermal bioplasma has been generated inside a liquid by using an alternating current voltage generator with peak voltage of 12 kV under driving frequency of 22 KHz. Here the discharge voltage and current have been measured for electrical characteristics. Especially, We have measured discharge and optical characteristics under various liquids of deionized (DI) water, tap water, and saline by using monochromator. We have also observed nitric oxide (NO), hydrogen peroxide (H2O2), and hydroxyl (OH) radical species by optical emission spectroscopy during the operation of bioplasma discharge inside various kinds of DI water, tap water, and saline. Here the temperature has been kept to be $40^{\circ}C$ or less when discharge in liquid has been operated in this experiment. Also we have measured plasma temperature by high speed camera image and density by using either H-alpha or H-beta Stark broadening method.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 춘계학술발표회
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• pp.77-77
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• 1996

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.86-86
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• 2000

• 한국표면공학회지
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• 제47권5호
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.176.2-176.2
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• 2013

Property of optical diagnostics for pulse-discharged plasma in liquid and its biological applications to proteins are investigated by making use of high voltage Marx generator. The Marx generator has been consisted of 5 stages, where each charging capacitor is 0.5 ${\mu}F$, to generate a high voltage pulse with rising time of $1{\mu}s$. We have applied an input voltage of 6 kV to the each capacitor of 0.5 ${\mu}F$. High voltage pulsed plasma has been generated inside a polycarbonate tube by a single-shot operation, where the breakdown voltage is measured to be 7 kV, current of 1.2 kA, and pulse width of ~ 1 ${\mu}s$ between the two electrodes of anode-cathode whose material is made of tungsten pin, which are immersed into the liquids. We have investigated the emitted hydrogen lines for optical diagnostics of high voltage pulsed plasma. The emission line of 656.3 nm from $H-{\alpha}$ and 486.1 nm from $H-{\beta}$ have been measured by a monochromator. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium conditions, the electron temperature and density of the high voltage pulsed plasma in liquid could be obtained by the Stark broadening of optical emission spectroscopy. For the investigation of the influence of pulsed plasma on biological proteins, we have exposed it onto the proteins such as hemoglobin and myoglobin. The structural changes in these proteins and their analysis have also been obtained by circular dichroism (CD) and ultraviolet (UV) visible spectroscopy.

• 대한의생명과학회지
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• 제12권4호
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• pp.355-359
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• 2006

This investigation was performed to study the antioxidant activities of Cornus officinalis Sieb extracts and the effect of Cornus officinalis Sieb extracts on glucose, lipid metabolism in diabetic rats. DPPH free radical scavanging activity and superoxide anion radical scavenging of Cornus officinalis Sieb extracts were 94.7% and 92.1%, respectively. Streptozotocin (45 mg/kg body weight, i.p.) induced diabetic rats showed a significant increases of plasma glucose, triglyceride and total cholesterol, concomitantly significant decrease of plasma high density lipoprotein. Glutathione level were decrease in cytosol of liver, lung and brain tissue of rats. Lipid peroxide were increase in microsome of liver cells. Group 1 and 2 were treated with Cornus officinalis Sieb extracts 200 mg/kg body weight and 100 mg/kg body weight for 24 days, individually. Group 1 and 2 rats showed decreased plasma glucose, triglyceride, total cholesterol and lipid peroxide in microsome of liver, and increased plasma high density lipoprotein and glutathione in cytosol of liver, lung and brain. The result suggest that Cornus officinalis Sieb extracts may normalize the Impaired antioxiants status in streptozotocin induced diabetic rats. Cornus officinalis Sieb extracts were used to improve the imbalance between free radicals and antioxidant system due to the diabetes.

• Korean Chemical Engineering Research
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• 제44권5호
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• pp.520-527
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• 2006

본 연구에서는 FC(fluorocarbon) 플라즈마 반응기에서 입사하는 이온에너지에 따른 고분자 증착, 식각과 증착의 경쟁반응 및 물리적 스퍼터링 등의 여러 표면 현상들을 모델링하였다. $SiO_2$ 식각에 대한 표면반응은 식각반응 영역을 잘 혼합된 CSTR(continuous stirred tank reactor) 가정을 도입하여 이온 도움에 의한 식각으로 모사되었다. 정상상태 고분자층을 통한 식각과 증착의 경쟁반응의 모델링은 이온 도움에 의한 고분자 생성 및 분해 메커니즘을 제안하여 수행하였다. 이러한 메커니즘은 최근 발표된 실험 및 분자동력학적 전산모사 결과에 기초하였으며,모델 계수들은 빔실험 결과 및 플라즈마 실험결과들을 이용하여 구하였다. 최종 개발된 모델의 결과들은 타당성을 검증하기 위해 문헌에 보고된 실험결과들과 비교하였다.