• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.170-171
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• 2008

The etching characteristics of Zirconium Oxide ($ZrO_2$) and etch selectivity of $ZrO_2$ to Si in HBr/$SF_6$ plasma were investigated. It was found that $ZrO_2$ etch rate shows a non-monotonic behavior with increasing both HBr fraction in $SF_6$ plasma, Source power, Bias Power, gas pressure. The maximum $ZrO_2$ etch rate of 54.8 nm/min was obtained for HBr(25%)/$SF_6$(75%) gas mixture. From these data, the suggestions on the $ZrO_2$ etch characteristics were made.