Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The etch characteristics of $ZrO_2$ thin films by using high density plasma

고밀도 플라즈마를 이용한 $ZrO_2$ 박막의 식각특성 연구

  • Woo, Jong-Chang (Electronics and Telecommunications Research Institute, School of Mechanical Engineering, Chung-Nam National University) ;
  • Kim, Sang-Gi (Electronics and Telecommunications Research Institute, School of Mechanical Engineering, Chung-Nam National University) ;
  • Koo, Jin-Gun (Electronics and Telecommunications Research Institute, School of Mechanical Engineering, Chung-Nam National University) ;
  • Jang, Myoung-Soo (Electronics and Telecommunications Research Institute, School of Mechanical Engineering, Chung-Nam National University) ;
  • Kang, Jin-Yeong (Electronics and Telecommunications Research Institute, School of Mechanical Engineering, Chung-Nam National University)
  • 우종창 (한국전자통신연구원, 충남대학교 기계공학과) ;
  • 김상기 (한국전자통신연구원, 충남대학교 기계공학과) ;
  • 구진근 (한국전자통신연구원, 충남대학교 기계공학과) ;
  • 장명수 (한국전자통신연구원, 충남대학교 기계공학과) ;
  • 강진영 (한국전자통신연구원, 충남대학교 기계공학과)
  • Published : 2008.06.19
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Abstract

The etching characteristics of Zirconium Oxide ($ZrO_2$) and etch selectivity of $ZrO_2$ to Si in HBr/$SF_6$ plasma were investigated. It was found that $ZrO_2$ etch rate shows a non-monotonic behavior with increasing both HBr fraction in $SF_6$ plasma, Source power, Bias Power, gas pressure. The maximum $ZrO_2$ etch rate of 54.8 nm/min was obtained for HBr(25%)/$SF_6$(75%) gas mixture. From these data, the suggestions on the $ZrO_2$ etch characteristics were made.

Keywords