• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1085-1092
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• 2001

The high efficient AC powder EL devices classified by low cost and low power consumption type fabricated using screen printing method with film thickness and organic binder. Brightness and current density were measured at frequency range of 400Hz∼1kHz and voltage range of 50∼300V$\_$rms/ to estimate optoelectrical properties of AC powder EL devices, respectively. Frequency generator was used as system producing frequency and voltage of a sine wave. Also brightness and current density were measured by luminometer and multimeter. In the case of low cost type AC powder EL device, brightness and current density were about 43 cd/m$^2$and 20$\mu$A/cm$^2$when the thickness of phosphor and dielectric layer was 45∼50$\mu$m under no addition of plasticizer respectively. In the case of low power consumption type AC powder EL device, brightness and current density were about 74 cd/m$^2$and 30∼40$\mu$A/cm$^2$when the thickness of phosphor and dielectric layer was 45∼50$\mu$m and 15∼20$\mu$m under addition of 15wt% plasticizer respectively. Also, AC powder EL device fabricated in this study showed absolutely excellent characteristics as the lifetime was longer than products of other company.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.215-217
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• 2007

Recently, color reproduction properties have attracted lots of attention with mass production of LCD especially corresponding to TV application and achievement of color reproduction properties such as CRT have been considered one of technical goals for high quality display. However, revision of the color reproduction properties only with CF(color filter) have fundamental limitations and resultant decrease in the transmittance of panel causes demand on high brightness of BL(Back Light). In this paper, we present such a method in which by optimization of original light spectrum from the BL source will improves the color reproduction properties corresponding to them of the CRT. When the intensity of RED and Green-Blue from ramp is revised densely, the characteristics different from CCFL(Cold Cathode Fluorescent Lamp) used before become added so that about 11 % of the color reproduction properties is improved compare to the existing LCD panel.

• Design & Manufacturing
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• v.7 no.1
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• pp.55-59
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• 2013

A Light Emitting Diode(LED) is a semiconductor device which converts electricity into light. LEDs are widely used in a field of illumination, LCD(Liquid Crystal Display) backlight, mobile signals because they have several merits, such as low power consumption, long lifetime, high brightness, fast response, environment friendly. In general, LEDs production does die bonding and wire bonding on board, and do silicon and phosphor dispensing to protect LED chip and improve brightness. Then lens molding process is performed using mixed liquid silicon rubber(LSR) by resin and hardener. A mixture of resin and hardener affect the optical characteristics of the LED lens. In this paper, computational design of static mixer was performed for mixing of liquid silicon. To evaluate characteristic of mixing efficiency, finite element model of static mixer was generated, and fluidic analysis was performed according to length of mixing element. Finally, optimal condition of length of mixing element was applied to static mixer from result of fluidic analysis.

• Journal of Power Electronics
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• v.11 no.3
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• pp.271-278
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• 2011

This paper presents a LLC resonant controller IC for secondary side control without external active devices to achieve low profile and low cost LED back light units. A gate driving transformer is adopted to isolate the primary side and the secondary side instead of an opto-coupler. A new integrated dimming circuitry is proposed to improve the dynamic current control characteristic and the current density of a LED for the brightness modulation of a large screen LCD. A dual-slope clock generator is proposed to overcome the frequency error due to the under shoot in conventional approaches. This chip is fabricated using 0.35 ${\mu}m$ BCD technology and the die size is $2{\times}2\;mm^2$. The frequency range of the clock generator is from 50 kHz to 500 kHz and the range of the dead time is from 50 ns to 2.2 ${\mu}s$. The efficiency of the LED driving circuit is 97 % and the current consumption is 40 mA for a 100 kHz operation frequency from a 15 V supply voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.312-312
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• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.4
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• pp.242-246
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• 2017

In this study, it was investigated about optical simulation in high brightness and high uniformity general lighting using glass light guide plate. And we adopt edge-light emission type light plate. Edge-light type lighting has been used LCD application, especially note PC or smart phone backlight unit. Because it had the good properties such as slim shape and light weight. We thought this type was suitable for general lighting application such as wall attached type or ceiling mount type. But many of edge-light type lighting had problems. It called slanted output light rays. That was main key parameter how could control the direction of output light rays. We investigated the solution of this problems, using ray tracing method, we recognized the major fact of the solution relied on the geometric structure of diffusing dot shape. We set the conditions of aspect ratio in diffusing dot shape such as 0.5 to 1. And, at first, we designed diffusing dots shape based on the results of optical simulation and made specimen. as above condition, and acquired good result in confirming dots shape such as the value of the output rays's peak angle was around 75 degrees. And good light distribution characteristics were measured by slated spectro-radiometer. It was shown that the effective ways of designing light distribution characteristics using optical simulation such as ray tracing linear method for making general lighting using glass light guide plate.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.1
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• pp.329-332
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• 2012

LEDs are using widely in a field of illumination, LCD LED backlight, mobile signals because they have several merits, such as low power consumption, long lifetime, high brightness, fast response, environment friendly. To achieve high performance LEDs, one needs to enhance output power, reduce operation voltage, and improve device reliability. In this paper, we have proposed that the optimum design and specialized process could improve the performance of LED chip. It was showed an output power of 7cd and input supplied voltage of 3.2V by the insertion technique of current blocking layer. In this paper, GaN-based LED chip which is built on the sapphire epi-wafer by selective MOCVD were designed and developed. After that, their performances were measured. It showed the output power of 7cd more than conventional GaN-based chip. It will be used the lighting source of a medical equipment and LCD LED TV with GaN-based LED chip.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.1
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• pp.245-251
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• 2015

In this paper, we present a design of PWM-controlled driving device for backlights in LED systems. The system can control either the brightness of the entire screen of backlights of LCD driven by LED or illumination or contrast of each partial segment of the entire screen. The PWM-controlled driving device includes the shift register that shifts the series data according to the clock signal prior to the generation of parallel data. It is also is comprised of a number of registers, a number of counters, a number of comparators, and a number of synchronizing gates (producing the PWM-controlled signals). The proposed device for backlights in LED systems can generate the PWM-controlled signal with a high degree of resolution without the increase of clock frequency. It also contains the PWM-controlled circuit that disperses and restrains the quantized noise.