• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1038-1039
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• 2008

This paper proposes a base models of Hybrid railway vehicle power system. A powered system with fuel cell is regarded as a high current and low voltage source. The design parameters of the system should be chosen by taking into account the characteristics of the fuel cell, so the costs of the power system at given operating conditions can be reduced. Currently, no integrated simulation has been approached to analyze interrelated effects. Therefore, the base models of power conversion system with a PEM fuel cell/IPT system for hybrid powered system that includes the PEM fuel cell stack, DC/DC converter are developed. Concept of bidirectional converter for super capacitor charging system is presented.

• 열처리공학회지
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• 제14권5호
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• pp.292-296
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• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• 한국세라믹학회지
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• 제42권4호
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• pp.219-223
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• 2005

A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNdT) thin films were prepared on $Pt(111)/TiO_2/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_{3}$, $Nd(TMHD)\_{3}$ and $Ti(O^iPr)_{2}(TMHD)_{2}$ were used as the precursors and were dissolved in n-butyl acetate. The BNdT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNdT thin film was $31.67\;{\mu}C/cm^{2}$ at an applied voltage of 5 V.

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.1029-1033
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• 1997

A prototype MFSFET using ferroelectric fluoride BaMgF$_4$as a gate insulator has been successfully fabricated with the help of 2 sheets of metal mask. The fluoride film was deposited in an ultrai-high vacuum system at a substrate temperature of below 30$0^{\circ}C$ and an in-situ post-deposition annealing was conducted for 20 seconds at $650^{\circ}C$ in the same chamber. The interface state density of the BaMgF$_4$/Si(100) interface calculated by a MFS capacitor fabricated on the same wafer was about 8$\times$10$^{10}$ /cm$^2$.eV. The I$_{D}$-V$_{G}$ characteristics of the MFSFET show a hysteresis loop due to the ferroelectric nature of the BaMgF$_4$film. It is also demonstrated that the I$_{D}$ can be controlled by the “write” plus which was applied before the measurements even at the same “read”gate voltage.ltage.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• 전기전자학회논문지
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• 제20권3호
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• pp.314-317
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• 2016

최근 휴대용 기기의 수요가 증가함에 따라 배터리 사용시간을 최대화하기 위한 노력이 진행되고 있다. 본 논문에서는 빠른 과도 응답을 갖는 멀티페이스 벅 변환기를 제안한다. 멀티페이스 벅 변환기는 리플 상쇄 효과가 있기 때문에 작은 크기의 출력 캐패시터를 사용할 수 있고, 더 적은 인덕턴스를 갖는 인덕터의 사용이 가능하다. 휴대용 기기가 대기 모드에서 활성 모드로 빠르게 변할 수 있도록 4-페이스 구조로 설계하여 빠른 과도 응답을 갖게 하였다. 사용된 공정은 Hynix 0.18um CMOS 공정을 통해 제작되었고 공급전압 범위는 2.7~3.3V 이며, 최대 부하 전류는 500mA, settling time은 14us이다.

• 전력전자학회논문지
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• 제16권4호
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• pp.382-395
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• 2011

본 논문에서는 다이오드정류기와 커패시터 필터로 구성된 입력전원을 가지고 동작되는 60W이하의 출력파워용량을 갖는 어댑터를 위한 새로운 LLC 공진컨버터에 대한 내용이다. 보조스위치의 동작에 의해 제안된 LLC 공진컨버터는 모든 입력전원 ($110V_{AC}$/ $220V_{AC}$) 및 부하조건에서 높은 효율특성을 가지고 전력을 전달 할 수 있다. 제안된 컨버터에 대한 동작특성에 대해 분석, 서술되어 있으며, 60W 시제품제작 및 실험을 통하여 적용 가능함을 보였다.

• 전기학회논문지
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• 제67권6호
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• pp.799-803
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• 2018

We demonstrated memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomeric substrate. The dielectric constant for the P(VDF-TrFE) thin film prepared on the elastomeric substrate was calculated to be 10 at a high frequency of 1 MHz. The voltage-dependent capacitance variations showed typical butterfly-shaped hysteresis behaviors owing to the polarization reversal in the film. The carrier mobility and memory on/off ratio of the MTFTs showed $15cm^2V^{-1}s^{-1}$ and $10^6$, respectively. This result indicates that the P(VDF-TrFE) film prepared on the elastomeric substrate exhibits ferroelectric natures. The fabricated MTFTs exhibited sufficiently encouraging device characteristics even on the elastomeric substrate to realize mechanically stretchable nonvolatile memory devices.

• 전력전자학회논문지
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• 제12권3호
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• pp.205-212
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• 2007

본 논문에서는 토오크 맥동을 줄이고 동특성 및 효율을 개선하기 위해 새로운 4-레벨 콘버터 이용한 DITC SRM 구동방식을 제안하였다. 4-레벨 콘버터는 콘덴서의 전압을 이용하여 여자 및 감자 시 높은 전압을 인가하여 여자특성을 개선할 수 있는 장점을 가진다. 본 논문에서는 DITC의 동특성 개선을 위해 사용된 4-레벨 콘버터의 동작특성과 부스트 전압에 따른 효율 개선에 대해 해석하였다. 이를 통해 제안된 SRM을 위한 4-레벨 콘버터의 DITC 제어기법을 시뮬레이션과 실험을 통해 검증하였다.

• 한국광학회지
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• 제3권3호
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• pp.178-182
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• 1992

내경 1.6cm, 길이 50cm의 알루미나 세라믹 방전관을 사용하여 방전전극간의 거리가 45cm인 공쟁식 방전가열형 구리증기레이저를 제작하였다. 방전가열 및 여기를 위한 6kV, 500mA 정격의 직류 고전압 전원장치, 1.8H의 중전 인덕터와 5nF의 에너지저장 캐패시터를 포함하는 resonant charging 방식의 고전압 충전회로와 1-7kHz 범위의 펄스반복률로 동작하는 thyratron 구동회로가 각각 설계 제작되었다. 개발된 레이저장치는 방전관의 온도 $1350^{\circ}C$ 부근에서 발진을 시작하였고, 충전전압 12kV, 펄스반복률 4.5kHz, 네온완충기체압력 50mbar, 동작온도 $1460^{\circ}C$일 때 0.7W의 최대평균 출력을 얻었다.