• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.808-812
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• 2006

In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.

• 전자공학회논문지T
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• 제35T권1호
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• pp.48-58
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• 1998

본 논문은 센서에서 수반되는 기생용량과 온도 드리프트 및 누설전류의 영향을 경감하기 위한 C-V변환회로 및 C-V변환회로에 관한 실험결과를 제시하고, 또한 논문에서 제안한 센싱 주파수를 기준주파수로 나누어줌으로써 상기 영향들을 줄일 수 있는 새로운 인터페이스 회로를 제시한다 이 회로는 용량비의 출력신호를 디지털 방식으로 16진수로 계수 함으로써 신호의 전송이나 컴퓨터 처리가 쉬울 뿐 아니라 비트수의 증가에 따라 분해 능을 향상시킬 수 있는 이점도 있다. 시작한 인터페이스 회로의 C-V 및 C-F 변환회로에서 전원전압 4.0V, 피이드백 커패시턴스10pF, 압력 0∼10 KPa범위에서 감도는 각각 28 ㎷/㎪·V, -6.6 ㎐/㎩로서 양호하였고, 온도 드리프트 특성은 0.051 %F.S./℃ 및 0.078 %F.S./℃로서 크게 개선되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권2호
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• pp.98-107
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• 2013

This work describes a 13b 100 MS/s 0.13 um CMOS four-stage pipeline ADC for 3G communication systems. The proposed SHA-free ADC employs a range-scaling technique based on switched-capacitor circuits to properly handle a wide input range of $2V_{P-P}$ using a single on-chip reference of $1V_{P-P}$. The proposed range scaling makes the reference buffers keep a sufficient voltage headroom and doubles the offset tolerance of a latched comparator in the flash ADC1 with a doubled input range. A two-step reference selection technique in the back-end 5b flash ADC reduces both power dissipation and chip area by 50%. The prototype ADC in a 0.13 um CMOS demonstrates the measured differential and integral nonlinearities within 0.57 LSB and 0.99 LSB, respectively. The ADC shows a maximum signal-to-noise-and-distortion ratio of 64.6 dB and a maximum spurious-free dynamic range of 74.0 dB at 100 MS/s, respectively. The ADC with an active die area of 1.2 $mm^2$ consumes 145.6 mW including high-speed reference buffers and 91 mW excluding buffers at 100 MS/s and a 1.3 V supply voltage.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.440-446
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• 2008

To manufacture the MLCC with X7R for high voltage stability, $BaTiO_3-MgO-MnO_2-Y_2O_3$ with $(Ba_{0.4}Ca_{0.6})SiO_3$ glass frit was formulated. Based on this composition, the addition of $Er_2O_3$ showed that TCC(Temperature Coefficient Capacitance) at $85^{\circ}C$ was improved from 5 % to ${\sim}0\;%$, but the dielectric constant and IR (Insulation Resistance) were decreased. The glass frit improved the dielectric constant and IR, so the appropriate contents of $Er_2O_3$ and glass frit were 0.6 mol% and 1 wt%, respectively. It showed that the dielectric constant and RC constant were 2,550 and 2,000 (${\Omega}F$), respectively in the sintering condition at $1250^{\circ}C$ in PO2 $10^{-7}$ Mpa. The MLCC with $3.2{\times}1.6$ (mm) size and $1\;{\mu}F$ was also suited for X7R with the above composition.

• 한국통신학회논문지
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• 제11권3호
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• pp.172-178
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• 1986

스위치드 커패시터 필터(Switched-capacitor filter)의 유리한 점은 IC화 할 때 능동 RC회로의 RC적(RC Product)에 해다아는 것이 커패시턴스의 비로 되어 정확하게 그 값을 유지하는 것이 쉽고 클럭주파수에 의하여 중심주파수를 선형적으로 변화시킬 수 있다는 것이다. 본 논문에서는 프로그램 가능한 2차 SC필터를 구성한 후 디지털 신호에 의하여 중심주파수, 선택도 및 최대이득이 제어가능함을 실험을 통하여 입증하였다. 실험결과 필터의 ${omega}_0$는 모든 수동소자에 대해 저감도를 유지할 수 있었으나 스위치의 기생용량이 커패시터의 비에 미치는 영향은 피할 수 없었다. SC 필터는 클럭주파수, 저항 어레이등에 의하여 전달특성을 가변시킬 수 있으므로 디지탈 신호의 처리나 음성의 분석 및 합성에도 이용될 수 있을 것이다.

• 대한기계학회논문집 C: 기술과 교육
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• 제2권1호
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• pp.1-8
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• 2014

최근 차량이 기계장치 중심에서 전기전자 장치 중심으로 발전하고 있으며, 상용차량 역시 전기전자 장치가 증대되고 있다. 정전용량 방식의 연료 센서는 연료의 레벨을 정전용량 값으로 측정하여 센서 내 MCU 를 통해 연산과정을 거쳐 최종 전압값의 신호로 출력해 주는 센서이다. 기존의 세라믹 저항을 이용한 센서보다 내구성이나 연료 측정 정확성이 향산된 진보된 센서로 센서에 대한 소프트웨어 검증을 위하여 가변 커패시터 보드를 제작하여 R-BENCH TOOL 을 통해 test case 를 자동으로 생성시킨 후 연료 센서의 소프트웨어 검증을 시도하였다. 또한 결론으로 98% 이상의 높은 소프트웨어의 신뢰도가 있음을 확인하였다.

• 한국세라믹학회지
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• 제30권5호
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• pp.397-403
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• 1993

Widely used dielectrics, barium titanate was promising material for ceramic capacitor. It was produced by specific formulation with various dopants-La2O3, ZrO2, SnO2, CaZrO3, CaTiO3, CaSnO3, Bi2O3, and etc.-according to demanded properties of capacitor. In this study, we would examinate the study of dielectric properties and temperatuer characteristics (T.C.) with the amount of Bi2O3. The sample was prepared with [BaTiO3]10＋[BaZrO3, SnO2, La2O3, ZrO2]10 and Bi2O3 varied from 1.0, 1.5, 2.0, 2.5 to 3.0wt%. After milling and mixing for 15hrs, each sample was dried and then pressed at 700kg/$\textrm{cm}^2$ into pellets. Pellets were fired at 131$0^{\circ}C$, for 3hrs in air. As the result of measurements, dielectric constant, break down voltage, and insulation resistance were increased with the amount of Bi2O3, and the resonant frequency was shifted from high frequency to low frequency range. In the case of temperature characteristics, capacitance change rate was symmetrically changed at -$25^{\circ}C$ and ＋85$^{\circ}C$ respectively. Therefore, it is recognized that the temperature characteristics can be moderated with doping Bi2O3 in our study.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.83-91
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• 2014

This paper presents a capacitive readout circuit for tri-axes microaccelerometer with sub-fF offset calibration capability. A charge sensitive amplifier (CSA) with correlated double sampling (CDS) and digital to equivalent capacitance converter (DECC) is proposed. The DECC is implemented using 10-bit DAC, charge transfer switches, and a charge-storing capacitor. The DECC circuit can realize the equivalent capacitance of sub-fF range with a smaller area and higher accuracy than previous offset cancelling circuit using series-connected capacitor arrays. The readout circuit and MEMS sensing element are integrated in a single package. The supply voltage and the current consumption of analog blocks are 3.3 V and $230{\mu}A$, respectively. The sensitivities of tri-axes are measured to be 3.87 mg/LSB, 3.87 mg/LSB and 3.90 mg/LSB, respectively. The offset calibration which is controlled by 10-bit DECC has a resolution of 12.4 LSB per step with high linearity. The noise levels of tri-axes are $349{\mu}g$/${\sqrt}$Hz, $341{\mu}g$/${\sqrt}$Hz and $411{\mu}g$/${\sqrt}$Hz, respectively.

• 대한전자공학회논문지SD
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• 제46권6호
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• pp.16-24
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• 2009

본 논문에서는 인덕터와 커패시터를 집적화한 DC-DC 벅 변환기를 설계하였다. 출력전압의 리플크기를 줄이기 위해 stacked interleaved 방식을 이용하였고 변환기의 제어부는 전압모드 방식의 제어방법을 사용하여 설계하였다. 설계한 DC-DC 벅 변환기는 표준 $0.5{\mu}m$ CMOS 공정으로 제작 중이며 전체면적은 $9mm^2$이다. 설계된 회로는 $3V{\sim}5V$의 입력전압에서 동작하며 LC 필터의 크기를 줄이기 위해 50MHz의 주파수로 동작하였다. 최대 250mA의 부하전류 구동이 가능하며 최대 71%의 전력변환 효율을 가졌다.

• Journal of Magnetics
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• 제21권2호
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• pp.266-272
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• 2016

Transcranial magnetic stimulation devices has been used mainly for diagnostic purposes by measuring the functions of the nervous system rather than for treatment purposes, and has a problem of considerable energy fluctuations per repeated pulse. The majority of strokes are caused by ischemia and result in brain tissue damage, leading to problems of the central nervous system including hemiparesis, dysfunction of language and consciousness, and dysfunction of perception. Control is difficult and the size is large due to the difficulty of digitalizing the energy stored in a capacitor, and there are many heavy devices. In addition, there are many constraints when it is used for a range of purposes such as head and neck diagnosis, treatment and rehabilitation of nerve palsy, muscle strengthening, treatment of urinary incontinence etc. Output stabilization and minimization of the energy variation rate are required as the level of the transcranial magnetic stimulation device is dramatically improved and the demand for therapeutic purposes increases. This study developed a compact, low cost transcranial magnetic stimulation device with minimal energy variation of a high repeated pulse and output stabilization using a real time capacitor charge discharge voltage. Ischemia was induced in male SD rats by closing off the common carotid artery for 5 minutes, after which the blood was re-perfused. In the cerebrum, the number of PARP reactive cells after 24 hours significantly decreased (p < 0.05) in the TMS group compared to the GI group. As a result, TMS showed the greatest effect on necrosis-related PARP immuno-reactive cells 24 hours after ischemia, indicating necrosis inhibition, blocking of neural cell death, and protection of neural cells.