• Journal of Electrical Engineering and Technology
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• v.12 no.5
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• pp.1934-1944
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• 2017

As a key component of high-voltage power conversion system for electric vehicles (EVs), bidirectional DC/DC (Bi-DC/DC) is required to have high efficiency and light weight. Conventional design methods optimize the Bi-DC/DC at the maximum power dissipation point (MPDP). For EVs application, the work condition of the Bi-DC/DC is not strict as the MPDP, where the design method using MPDP may not be optimal during travel of EVs. This paper optimizes the Bi-DC/DC converter targeting efficiency and weight based on the driving cycle. By analyzing the two-phase interleaved Bi-DC/DC for hybrid energy storage systems (HESS) of EVs, its power dissipation is calculated, and an efficiency model is derived. On this basis, weight models of capacitor, inductor and heat sink are built, as well as a dynamic temperature model of heat sink. Based on these models, a method using New European Driving Cycle (NEDC) for optimal design of Bi-DC/DC which simultaneously considered efficiency and weight is proposed. The simulation result shows that compare with conventional optimization methods revealed that the optimization approach based on driving cycle allowed significant weight reduction while meeting the efficiency requirements.

• The Transactions of the Korean Institute of Power Electronics
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• v.8 no.1
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• pp.1-8
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• 2003

When solving the problems of electric power quality the converters with high Power factor are useful for the DC arc furnace power supply. In this paper, resonant converters of 50(60) Hz AC to DC arc described, where in each period of network voltage the capacitor and inductor of an oscillatory circuit are switched from series into parallel and vice versa parametrically. The duration of series and parallel connection and also the transformation ratio are dependent on load. Parallel oscillatory circuit restricts the short circuit current. These converters have high power factor from no-load to short-circuit and fit very well to supply are furnaces.

• Journal of Electrical Engineering and Technology
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• v.3 no.2
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• pp.213-217
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• 2008

The flux-lock type superconducting fault current limiter(SFCL) can apply the magnetic field into the high-$T_C$ superconducting(HTSC) element by adopting the magnetic field coil in its third winding. To apply the magnetic field into the HTSC element effectively, the capacitor for LC resonance is connected in series with the magnetic field coil. However, the current waveform of third winding for the application of the magnetic field is affected by the LC resonance condition for the frequency of the source voltage and can affect the waveform of the limited fault current. In this paper, the current waveform of the third winding in the flux-lock type SFCL according to LC resonance condition during a fault period was analyzed. From the differential equation for its electrical circuit, the current equation of the third winding was derived and described with the natural frequency and the damping ratio as design parameters. Through the analysis according to the design parameters of the third winding, the waveform of the limited fault current was confirmed to be influenced by the current waveform of the third winding and the design condition for the stable fault current limiting operation of this SFCL was obtained.

• Proceedings of the KIEE Conference
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• 2003.07b
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• pp.1238-1240
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• 2003

A new soft switching technique that improves performance of the high power factor boost rectifier by reducing switching losses is introduced. The losses are reduced by air active snubber which consists of an inductor, a capacitor a rectifier, and an auxiliary switch. Since the boost switch turns off with zero current, this technique is well suited for implementations with insulated gate bipolar transistors. The reverse recovery related losses of the rectifier are also reduced by the snubber inductor which is connected in series with the boost switch and the boost rectifier. In addition, the auxiliary switch operates with zero voltage switching. A complete design procedure and extensive performance evaluation of the proposed active snubber using a 1.2[kW] high power factor boost rectifier operating from a 90 [$V_{rms}$] input are also presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.240-240
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• 2010

A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (~5.2 eV) and extremely high dot density (${\sim}\;1.2{\times}10^{13}/cm^2$) was fabricated. Its structural effect for multiple layers was evaluated and compared to one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with 2-4 multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler-Nordheim (FN)-tunneling could be a candidate structure for future flash memory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.238-243
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• 2014

This paper dealt with the measurement and analysis of partial discharge (PD) under high voltage direct current (HVDC) in SF6 gas. Electrode systems such as a protrusion on conductor (POC), a protrusion on enclosure (POE), a crack on epoxy plate and a free particle (FP) were fabricated to simulate the insulation defects. The analysis system was designed with a Time-Frequency (T-F) map algorithm programed based on LabVIEW. This can arrange the acquired PD pulses into frequency and time domain. A HVDC power source is composed of a transformer (220 V/50 kV), a diode (100 kV) and a capacitor (50 kV, 0.5 ${\mu}F$). The gap between the electrodes is 3 mm, and the $SF_6$ gas was set at 5 bar. PD pulses were detected by a 50 ${\Omega}$ non-inductive resistor. In the analysis, PD pulses were distributed below 0.5 MHz and 20 ns ~ 35 ns for the POC, 0.7 MHz ~ 1.7 MHz, below 0.6 MHz and 10 ns ~ 40 ns and 60 ns ~125 ns for the POE, below 0.1 MHz and 135 ns ~ 215 ns for the crack, and below 1.6 MHz and 250 ns for the FP.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.6
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• pp.105-112
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• 2003

Diode rectifier which can't be controlled output voltage and phase control converter as AC/DC converter have low power factor and harmonics of lower order in the line current. In this paper, three phase PWM(Pulse Width Modulation) AC/DC boost converter is studied to solve these problems. The characteristics of a proposed converter are to control the phase of current without current sensor as a very simple control algorithm using circuit parameters only and to apply sinusoidal PWM method with fixed switching frequency due to a difficult design of input filter and switching device. We simulate for the proposed algorithm that high power factor is achieved and DC link voltage has fast dynamic response without ripple in rectifying and regenerating operation. As a result of experiment with circuit parameter(inductor, capacitor) decided in simulation, the proposed converter had high power factor and reduction of low order harmonics as against diode rectifier.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.128-132
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• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.2
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• pp.9-17
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• 2002

A high-efficiency electronic ballast for HID lamps is presented. The ballast consists of a PFC and a resonant inverter. To reduce losses of the ballast, DC link voltage should be determined by taking into account the peak voltage of lamp and the maximum flux density should be kept 0.2[T] on all of inductors. AR inductor at bridge diode is employed in order to remove currant harmonics from PFC. An inductor is connected in series with an electrolytic capacitor at DC link to reject high-frequency current. The acoustic resonance is eliminated using the stead spectrum technique. The electronic ballast for 250[W] metal-halide discharge lamp is implemented and 96[%] efficiency, no acoustic resonance and low conducted EMI level are accomplished.