• Journal of the Korean Society of Industry Convergence
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• v.21 no.1
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• pp.1-8
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• 2018

The purpose of this study is to develop a high-strength, high-toughness, thin-walled aluminum shock absorber housing product by applying a high vacuum die casting method to improve internal gas defect and formability. The analysis program dedicated for the casting was used because it was too costly and time-consuming to adopt the gating system design. The final casting plan was designed based on the flow pattern of the material filled into the mold and the result of air pressure and air pocket after the material was completely filled in the mold. Gaty shape was designed as a split type. The runner was designed to have the same shape as the initial inlet curve of the cavity, and the flow of the molten metal was prevented from turbulent flow. The most favorable results were obtained when the injection speed was $V_2=4.0m/s$. Defects on pores were reduced by applying high vacuum level inside the mold.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.472-477
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• 2004

Miniaturization is the central theme in modern fabrication technology. Many of the components used in modem products are becoming smaller and smaller. The direct write FIB technology has several advantages over contemporary micromachining technology, including better feature resolution with low lateral scattering and capability of mastless fabrication. Therefore, the application of focused ion beam(FIB) technology in micro fabrication has become increasingly popular. In recent model of FIB, however the feeding system has been a very coarse resolution of about a few ${\mu}{\textrm}{m}$. It is not unsuitable to the sputtering and the deposition to make the high-precision structure in micro or macro scale. Our research is the development of nano stage of 200mm strokes and l0nm resolutions. Also, this stage should be effectively operating in ultra high vacuum of about 1$\times$10$^{-5}$ pa. This paper presents the concept of nano stages and the discussion of the material treatment for ultra tush vacuum.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.45-56
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• 2003

A high flux metal plasma pulse ion source, which can simultaneously perform ion implantation and deposition, was developed and tested to evaluate its performance using the prototype. Flux of ion source was measured to be 5 A and bi-polar pulse power supply with a peak voltage of 250 V, repetition of 20 Hz and width of 100 ${\mu}\textrm{s}$ has an output current of 2 kA and average power of 2 kW. Trigger power supply is a high voltage pulse generator producing a peak voltage of 12 kV, peak current of 50 A and repetition rate of 20 Hz. The acceleration column for providing target energy up to ion implantation is carefully designed and compatible with UHV (ultra high vacuum) application. Prototype systems including various ion sources are fabricated for the performance test in the vacuum and evaluated to be more competitive than the existing equipments through repeated deposition experiments.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.458-464
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• 2006

The construction and the performance test of an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system has been completed successfully. We have done domestic development and tried performance test for ultra high vacuum molecular beam epitaxy system. This system has reached pressure $2X10-^{10}$ Torr and the substrate has reached temperature $1,100^{\circ}C$. We have investigated into the characteristic of ZnSe/GaAs(001) by using scanning electron microscope (SEM), atomic force microscope (AFM), x-ray diffraction (XRD) and photolumi-nescence (PL).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.470-470
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• 2012

Organic thin film transistors (OTFTs) backplane constitute the active elements in new generations of plastic electronic devices for flexible display. The overall OTFTs performance is largely depended on the properties and quality of each layers of device material. In solution based process of organic semiconductors (OSCs), the interface state is most impediments to preferable performance. Generally, a threshold voltage (Vth) shift is usually exhibited when organic gate insulators (OGIs) are exposed in an ambient air condition. This phenomenon was caused by the absorbed polar components (i.e. oxygen and moisture) on the interface between OGIs and Soluble OSCs during the jetting process. For eliminating the polar component at the interface of OGI, the role of high vacuum seasoning on an OGI for all solution processable OTFTs were studied. Poly 4-vinly phenols (PVPs) were the material chosen as the organic gate dielectric, with a weakness in ambient air. The high vacuum seasoning of PVP's surface showed improved performance from non-seasoning TFT; a $V_{th}$, a ${\mu}_{fe}$ and a interface charge trap density from -8V, $0.018cm^2V^{-1}s^{-1}$, $1.12{\times}10^{-12}(cm^2eV)^{-1}$ to -4.02 V, $0.021cm^2V^{-1}s^{-1}$, $6.62{\times}10^{-11}(cm^2eV)^{-1}$. These results of OTFT device show that polar components were well eliminated by the high vacuum seasoning processes.

• Vacuum Magazine
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• v.4 no.1
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• pp.16-23
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• 2017

Recently, KSTAR, Korea's superconducting fusion energy research and development device, has succeeded in driving the high performance plasma for 70 seconds for the first time in the world. Continuous plasma operation technology is an essential factor for commercialization of fusion energy power generation. Therefore, this achievement is expected to play a major role in the research of fusion technology required for future fusion power plants. In order to operate the KSTAR, the discharge process in which the neutral gas is turned into the plasma should be preceded in the start-up (breakdown) phase of tokamak operation. This process essentially involves the vacuum environment in the tokamak device. KSTAR has successfully operated a vacuum pumping system to achieve the target level of the vacuum environment through a high temperature baking operation, a discharge cleaning process and boronization.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.827-829
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• 2011

Vacuum facility is required for high altitude space environment test to develop satellites or space launch vehicles. We, at Chungnam, National University, developed turbo molecular pump vacuum test facility up to $1.0{\times}10-6$ torr to simulate 200 km altitude environment. In this paper, we present some preliminary vacuum performance test results.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.31-31
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• 1996

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.75-75
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• 1993

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.38-38
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• 1993