• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.424-427
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• 2015

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{0.86}Ca_{0.14})(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3+xCuO$ (x= 0.006~0.010) ceramics were prepared by the conventional solid-state reaction method. The effects of CuO addition on the microstructure and dielectric properties was investigated. All specimens indicated rhombohedral phase without any secondary phase. As CuO addition increased, the variation width of TCC was increased at more than $40^{\circ}C$. Also, the specimen with x=0.007 sintered at $1,250^{\circ}C$ showed the high dielectric constant of 9,632 in spite of low temperature sintering temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.35-40
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• 2007

The new PEI(poly(epoxy-imide))-nano Silica film has been synthesized via in situ CS sol process, and the chemical bonding and microstructure of nano silica dispersed in resin were examined by FT-IR, TAG and SEM. The dielectric properties of these hybrid films over a given temperature and frequency ranges have been studied in a point of view of stable chemical bonding of nano Silica filler. The results from IR spectra and SEM photograph indicated that PEI-Silica hybrid film prepared with nano CS sol process has been synthesized in uniform and chemical bonding. The decrease property of dielectric constant with CS content, tangent loss consistent of given frequency and temperature has been explained in terms of the chain movement of polymer through chemical bonging and size effect of nano silica. The new PEI-CS sol hybrid film with such stable chemical and dielectric properties was expected to be used as a high functional coating application in ET, IT and electric power products.

• Korean Journal of Materials Research
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• v.21 no.7
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• pp.377-383
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• 2011

Thermoelectric power, dc conductivity, and the dielectric relaxation properties of $La_2NiO_{4.03}$ are reported in the temperature range of 77 K - 300 K and in a frequency range of 20 Hz - 1 MHz. Thermoelectric power was positive below 300K. The measured thermoelectric power of $La_2NiO_{4.03}$ decreased linearly with temperature. The dc conductivity showed a temperature variation consistent with the variable range hopping mechanism at low temperatures and the adiabatic polaron hopping mechanism at high temperatures. The low temperature dc conductivity mechanism in $La_2NiO_{4.03}$ was analyzed using Mott's approach. The temperature dependence of thermoelectric power and dc conductivity suggests that the charge carriers responsible for conduction are strongly localized. The relaxation mechanism has been discussed in the frame of the electric modulus and loss spectra. The scaling behavior of the modulus and loss tangent suggests that the relaxation describes the same mechanism at various temperatures. The logarithmic angular frequency dependence of the loss peak is found to obey the Arrhenius law with activation energy of ~ 0.106eV. At low temperature, variable range hopping and large dielectric relaxation behavior for $La_2NiO_{4.03}$ are consistent with the polaronic nature of the charge carriers.

• Elastomers and Composites
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• v.32 no.5
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• pp.309-317
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• 1997

Estimation of the dielectric properties of insulating silicone rubbers added reinforcing fillers $(SiO_2,\;0{\sim}140phr)$ are very important to investigate the polymer structure. The characteristies of the dielectric absorption in insulating silicone rubbers were studied in the frequency range from 30Hz to 1MHz at the temperature range from $0{\sim}170^{\circ}C$. In the case of non-filled specimen, the dielectric loss is due to the syloxane which is the main chain of silicone rubber at the low temperature below $50^{\circ}C$ and the frequency at 330Hz, and is due to methyl and vinyl radical over the frequency of 1MHz. It is confirmed that the methyl radical or the vinyl radical becomes thermal oxidation at the high temperature over $100^{\circ}C$ and then the dielectric disperssing owing to the carboxyl radical Is appeared. In the case of filled specimen, the dielectric constant is in creased with the additives of reinforcing fillers due to the effect of interfacial polarization explained by MWS(Maxwell-Wagner-Sillars)'s law. The dielectric loss is decreased by the disturbance of reinforcing fillers that is permeated between networks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.61-64
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• 2003

The degradation of the dielectric properties of insulating papers that were used under loaded conditions at cryogenic temperature was paid attention. Electrical and tensile stress properties of dielectric paper at cryogenic temperature have been investigated to optimum insulating design of high-Tc superconducting(HTS) cable. Tensile strength of PPLP in liquid nitrogen was high more than that of air, but tensile strain could know that decrease sharply. According as tensile strength increases, the breakdown stress of PPLP in liquid nitrogen was decreased.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.364-371
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• 1996

In this study, in order to investigate the applicability of IPN structure to epoxy resin which has been widely used as electrical and electronic insulating materials, DC dielectric breakdown properties and morphology were compared and analyzed according to variation of network structure, using the single network structure specimen formed of epoxy resin alone, interpenetrating polymer network specimen formed of epoxy resin/methacrylic acid resin, and interpenetrating polymer network specimen formed of epoxy resin/methacrylic acid resin/polyurethane resin. As results of the measunnent of DC dielectric breakdown strength at 50[.deg. C] and 130[>$^{\circ}C$], IPN specimen formed of epoxn, resin 100[phr] and methacrylic acid resin 35[phr] was the most excellent, and which corresponded to the SEM phenomena. The effect of IPN was more remarkable at high temperature region than at low temperature region. It is supposed that the defect of epoxy resin, dielectric breakdown strength is lowered remarkably at high temperature region, be complemented according to introducing IPN method.

• Journal of Information Display
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• v.11 no.3
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• pp.109-112
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• 2010

The solid phase compositions and dielectric properties of silicon nitride ($SiN_x$) films prepared using the plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature ($200^{\circ}C$) were studied. Controlling the source gas mixing ratio, R = $[N_2]/[SiH_4]$, and the plasma power successfully produced both silicon-rich and nitrogen-rich compositions in the final films. The composition parameter, X, varied from 0.83 to 1.62. Depending on the film composition, the dielectric properties of the $SiN_x$ films also varied substantially. Silicon-rich silicon nitride (SRSN) films were obtained at a low plasma power and a low R. The photoluminescence (PL) spectra of these films revealed the existence of nano-sized silicon particles even in the absence of a post-annealing process. Nitrogen-rich silicon nitride (NRSN) films were obtained at a high plasma power and a high R. These films showed a fairly high dielectric constant ($\kappa$ = 7.1) and a suppressed hysteresis window in their capacitance-voltage (C-V) characteristics.

• Polymer(Korea)
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• v.30 no.6
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• pp.492-497
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• 2006

The epoxy composites are prepared with mixing temperature of epoxy/montmorillonite (MMT) melt master batch and the dielectric properties of the composites are also compared with intercalation of MMT. The exfoliation mainly occurrs iii the low content of MMT composites, while in the composites with high content of MMT the interspacing distance increases as the mixing temperature of epoxy/MMT master batch is increased. Class transition temperature of the composite which the MMT are effectively exfoliated is increased with the appropriate postcuring condition. Since the orientation polarization of dipoles in the epoxy molecules is restricted by the clay nanolayers exfoliated, the dielectric constant and dielectric loss of the composites are reduced. Furthermore, the dielectric properties could be improved by controling the mixing temperature and time of epoxy/MMT master batch as well as postcuring condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.60-60
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• 2008

We manufactured Liquid Crystal Polymer (LCP) and (1-x)$BaTiO_3-xSrTiO_3$(BST) ceramic composites and investigated dielectric properties to use as embedded capacitor in printed circuit boards and replace LTCC substrates. The dielectric properties of these composites are varied with volume fraction of BST and ratios of BT/ST. Dielectric constants are in the range of 3~28. In addition, we could get low TCC and High Q value that could not achieve in other ceramic-polymer composites. Especially, in composite with x=0.4 and 50vol% BST, the dieletric constant and Q-value are 27 and 300, respectively. And more TCC is -116~145ppm/$^{\circ}C$ in the temperature range of -55~$125^{\circ}C$. We think that this composites can be used high-Q substrate material like LTCC and embedded temperature compensation capacitor in printed circuit boards.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.232-233
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• 2007

We manufactured Liquid Crystal Polymer (LCP) and (1-x)CaTiO3-xLaAlO3 (CT-LA) ceramic composites and investigated dielectric properties to use as embedded capacitor in printed circuit boards and replace LTCC substrate. The dielectric properties of these composites are varied with volume fraction of CT-LA and ratios of CT/LA. Dielectric constants are in the range of 3~15. In addition, we could get low TCC and High Q value that could not achieve in other ceramic-polymer composites. Especially, in composite with x=0.01 and 30 vol% CT-LA, the dieletric constant and Q-value are 10 and 200, respectively. And more TCC is $-28{\sim}300ppm/^{\circ}C$ in the temperature range of $-55{\sim}125^{\circ}C$. We think that this composites can be used high-Q substrate material like LTCC and embedded temperature compensation capacitor in printed circuit boards.